BSS127_10 INFINEON | Alldatasheet

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Technical content

Features

  • n-channel
  • enhancement mode
  • Logic level (4.5V rated)
  • dv /dt rated
  • Qualified according to AEC Q101
  • 100%lead-free; RoHS compliant Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T A=25 °C 0.021 A T A=70 °C 0.017 Pulsed drain current I D,pulse T A=25 °C 0.09 Reverse diode dv /dt dv /dt I D=0.09 A, V DS=480 V, di /dt =200 A/µs, T j,max=150 °C 6 kV/µs Gate source voltage V GS ±20 V ESD class (JESD22-A114-HBM) 0 (<250V) Power dissipation P tot T A=25 °C 0.50 W Operating and storage temperature T j, T stg -55 ... 150 °C IEC climatic category; DIN IEC 68-1 55/150/56 Value V DS 600 V R DS(on),max 500 Ω I D 0.021 A Product Summary Type Package Pb-free Tape and Reel Information Marking BSS127 PG-SOT-23 Yes L6327: 3000PCS/reel Sis PG-SOT-23 Rev. 1.47 page 1 2010-07-29

Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - minimal footprint R thJA - - 250 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA 600 - - V Gate threshold voltage V GS(th) V DS=VGS, I D=8 µA 1.4 2.0 2.6 Drain-source leakage current I D (off) V DS=600 V, V GS=0 V, T j=25 °C - - 0.1 µA V DS=600 V, V GS=0 V, T j=150 °C -- 1 0 Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=0.016 A - 330 600 Ω V GS=10 V, I D=0.016 A - 310 500 Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=0.01 A 0.007 0.015 - S Values Rev. 1.47 page 2 2010-07-29

Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss -2 1 2 8 p F Output capacitance C oss - 2.4 3 Reverse transfer capacitance Crss - 1.0 1.5 Turn-on delay time t d(on) - 6.1 19.0 ns Rise time t r - 9.7 14.5 Turn-off delay time t d(off) -1 4 2 1 Fall time t f - 115 170 Gate Charge Characteristics Gate to source charge Q gs - 0.07 0.10 nC Gate to drain charge Q gd - 0.31 0.5 Gate charge total Q g - 0.65 1.0 Gate plateau voltage V plateau - 3.56 - V Reverse Diode Diode continous forward current I S - - 0.016 A Diode pulse current I S,pulse - - 0.09 Diode forward voltage V SD V GS=0 V, I F=0.016 A, T j=25 °C - 0.82 1.2 V Reverse recovery time t rr - 160 240 ns Reverse recovery charge Q rr - 13.2 19.8 nC V R=300 V, I F=0.016 A, di F/dt =100 A/µs T A=25 °C Values V GS=0 V, V DS=25 V, f =1 MHz V DD=300 V, V GS=10 V, I D=0.01 A, R G=6 Ω V DD=300 V, I D=0.01 A, V GS=0 to 10 V Rev. 1.47 page 3 2010-07-29

1 Power dissipation 2 Drain current

P tot=f(T A) I D=f(T A); V GS≥10 V 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 10 µs 100 µs 1 ms 10 ms DC 103102101100 10-1 10-2 10-3 10-4 V DS [V] I D [A] limited by on-state resistance 100 ms single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10310210110010-110-210-310-410-5 103 102 101 100 10-1 t p [s] Z thJA [K/W] 0.1 0.2 0.3 0.4 0.5 0.6 0 40 80 120 160 T A [°C] P tot [W] 0.005 0.01 0.015 0.02 0.025 0.03 0 40 80 120 160 T A [°C] I D [A] Rev. 1.47 page 4 2010-07-29

5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 0.005 0.01 0.015 0.02 0.025 01234 V GS [V] I D [A] 0.005 0.01 0.015 0.02 0.025 I D [A] g fs [S] 2.6 V 3 V 3.2 V 3.6 V 3.8 V 4 V 5 V 10 V 0.005 0.01 0.015 0.02 0.025 0.03 02468 1 0 V DS [V] I D [A] 2.6 V 3 V 3.2 V 3.6 V 3.8 V 4 V 5 V 10 V 200 400 600 800 1000 I D [A] R DS(on) [Ω] Rev. 1.47 page 5 2010-07-29

9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=0.016 A; V GS=10 V V GS(th)=f(T j); V DS=VGS; I D=8 µA parameter: I D 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C I F=f(V SD) parameter: T j typ 98 % 100 200 300 400 500 600 700 800 900 1000 -60 -20 20 60 100 140 180 T j [°C] R DS(on) [Ω] Ciss Coss Crss 102 101 100 10-1 0 5 10 15 20 25 V DS [V] C [pF] 25 °C150 °C 25 °C, 98% 150 °C, 98% 10-1 10-2 10-3 V SD [V] I F [A] max typ min 0.5 1.5 2.5 3.5 -60 -20 20 60 100 140 180 T j [°C] V GS(th) [V] Rev. 1.47 page 6 2010-07-29

13 Typ. gate charge 14 Drain-source breakdown voltage V GS=f(Q gate); I D=0.01 A pulsed V BR(DSS)=f(T j); I D=250 µA parameter: V DD

15 Gate charge waveforms

-60 -20 20 60 100 140 180 T j [°C] V BR(DSS) [V]

120 V 300 V 480 V

Q gate [nC] V GS [V] V GS Q gate V gs(t h ) Q g(th) Q gs Q gd Q sw Q g Rev. 1.47 page 7 2010-07-29

Package Outline: Footprint: Packaging: Rev. 1.47 page 8 2010-07-29

81726 Munich, Germany

© 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.47 page 9 2010-07-29