BSS126I INFINEON | Alldatasheet

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Technical content

Features

  • N-channel
  • Depletionmode
  • dv/dtrated
  • Pb-freeleadplating;RoHScompliant
  • Halogen-freeaccordingtoIEC61249-2-21 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS 600 V RDS(on),max 700 Ω IDSS,min 0.007 A Type/OrderingCode Package Marking RelatedLinks BSS126I PG-SOT23 SHs -

SIPMOS®Small-Signal-Transistor BSS126I Rev.2.2,2022-07-01Final Data Sheet TableofContents

SIPMOS®Small-Signal-Transistor BSS126I Rev.2.2,2022-07-01Final Data Sheet 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current ID 0.021

0.017 A TA=25°C

TA=70°C Pulsed drain current ID,pulse - - 0.085 A TA=25°C Reversediodedv/dt dv/dt - - 6 kV/µs ID=0.016A,VDS=20V, di/dt=200A/µs,Tj,max=150°C Gate source voltage VGS -20 - 20 V - ESD sensitivity (HBM) as per JESD22-A114 - - - Class 0 <250V - - Power dissipation Ptot - - 0.50 W TA=25°C Operating and storage temperature Tj,Tstg -55 - 150 °C - 2Thermalcharacteristics Table3Thermalcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - ambient, minimal footprint RthJA - - 250 K/W - 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 600 - - V VGS=-5V,ID=250µA Gate threshold voltage VGS(th) -2.7 -2.0 -1.6 V VDS=3V,ID=8µA Drain-source cutoff current ID(off) 0.1 10 µA VDS=600V,VGS=-5V,Tj=25°C VDS=600V,VGS=-5V,Tj=125°C Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V On-state drain current IDSS 7 - - mA VGS=0V,VDS=25V Drain-source on-state resistance RDS(on) 320 280 700 500 Ω VGS=0V,ID=3mA VGS=10V,ID=16mA Transconductance gfs 0.008 0.017 - S |VDS|>2|ID|RDS(on)max,ID=0.01A

SIPMOS®Small-Signal-Transistor BSS126I Rev.2.2,2022-07-01Final Data Sheet Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss - 21 - pF VGS=-5V,VDS=25V,f=1MHz Output capacitance Coss - 2.4 - pF VGS=-5V,VDS=25V,f=1MHz Reverse transfer capacitance Crss - 1.0 - pF VGS=-5V,VDS=25V,f=1MHz Turn-on delay time td(on) - 6.1 - ns VDD=300V,VGS=-3to7V, ID=0.01A,RG=6Ω Rise time tr - 9.7 - ns VDD=300V,VGS=-3to7V, ID=0.01A,RG=6Ω Turn-off delay time td(off) - 14 - ns VDD=300V,VGS=-3to7V, ID=0.01A,RG=6Ω Fall time tf - 115 - ns VDD=300V,VGS=-3to7V, ID=0.01A,RG=6Ω Table6Gatechargecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 0.05 - nC VDD=400V,ID=10mA,VGS=-3to5V Gate to drain charge Qgd - 1.2 - nC VDD=400V,ID=10mA,VGS=-3to5V Gate charge total Qg - 1.4 - nC VDD=400V,ID=10mA,VGS=-3to5V Gate plateau voltage Vplateau - 0.10 - V VDD=400V,ID=10mA,VGS=-3to5V Table7Reversediode Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode continous forward current IS - - 0.016 A TA=25°C Diode pulse current IS,pulse - - 0.064 A TA=25°C Diode forward voltage VSD - 0.81 1.2 V VGS=-5V,IF=16mA,Tj=25°C Reverse recovery time trr - 160 - ns VR=300V,IF=0.01A, diF/dt=100A/µs Reverse recovery charge Qrr - 13.2 - nC VR=300V,IF=0.01A, diF/dt=100A/µs

SIPMOS®Small-Signal-Transistor BSS126I Rev.2.2,2022-07-01Final Data Sheet 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation TA[°C] Ptot[W] 120 160 0.0 0.1 0.2 0.3 0.4 0.5 0.6 Ptot=f(TA) Diagram2:Draincurrent TA[°C] ID[A] 120 160 0.000 0.005 0.010 0.015 0.020 0.025 ID=f(TA);VGS≥10V Diagram3:Safeoperatingarea VDS[V] ID[A] 100 101 102 103 10-4 10-3 10-2 10-1 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TA=25°C;D=0;parameter:tp Diagram4:Max.transientthermalimpedance tp[s] ZthJA[K/W] 10-4 10-3 10-2 10-1 100 101 102 101 102 103 single pulse 0.01 0.02 0.05 0.1 0.2 0.5 ZthJA=f(tp);parameter:D=tp/T

SIPMOS®Small-Signal-Transistor BSS126I Rev.2.2,2022-07-01Final Data Sheet Diagram5:Typ.outputcharacteristics VDS[V] ID[A] 0.00 0.01 0.02 0.03 0.04 1 V 0.5 V 0.2 V 0.1 V 0 V -0.1 V -0.2 V 10 V ID=f(VDS);Tj=25°C;parameter:VGS Diagram6:Typ.drain-sourceonresistance ID[A] RDS(on)[Ω ] 0.00 0.01 0.02 0.03 0.04 100 200 300 400 500 600 700 800 900 1000 -0.2 V -0.1 V 0 V 0.1 V 0.2 V 0.5 V 1 V 10 V RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics VGS[V] ID[A] 0.000 0.005 0.010 0.015 0.020 0.025 ID=f(VGS);VDS=10V;Tj=25°C Diagram8:Typ.forwardtransconductance ID[A] gfs[S] 0.000 0.005 0.010 0.015 0.020 0.000 0.005 0.010 0.015 0.020 0.025 gfs=f(ID);Tj=25°C

SIPMOS®Small-Signal-Transistor BSS126I Rev.2.2,2022-07-01Final Data Sheet Diagram9:Drain-sourceon-stateresistance Tj[°C] RDS(on)[Ω ] -60 -20 100 140 180 200 400 600 800 1000 1200 1400 1600 max typ RDS(on)=f(Tj);ID=3mA;VGS=0V Diagram10:Typ.gatethresholdvoltage Tj[°C] VGS(th)[V] -60 -20 100 140 180 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 max typ min VGS(th)=f(Tj);VDS=3V;ID=8µA;parameter:ID Diagram11:Typ.capacitances VDS[V] C[pF] 10-1 100 101 102 Ciss Coss Crss C=f(VDS);VGS=-3V;f=1MHz Diagram12:Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.0 0.5 1.0 1.5 2.0 10-3 10-2 10-1 25 °C 25 °C, max 150 °C 150 °C, max IF=f(VSD);parameter:Tj

SIPMOS®Small-Signal-Transistor BSS126I Rev.2.2,2022-07-01Final Data Sheet Diagram13:Typ.gatecharge Qgate[nC] VGS[V] 0.0 0.4 0.8 1.2 1.6 120V 480V 300V VGS=f(Qgate);ID=0.01Apulsed;parameter:VDD Diagram14:Drain-sourcebreakdownvoltage Tj[°C] VBR(DSS)[V] -60 -20 100 140 180 500 540 580 620 660 700 ID=f(VGS);VGS=-3V;Tj=25°C Diagram Gate charge waveforms

SIPMOS®Small-Signal-Transistor BSS126I Rev.2.2,2022-07-01Final Data Sheet 5PackageOutlines Figure1OutlinePG-SOT23,dimensionsinmm

SIPMOS®Small-Signal-Transistor BSS126I Rev.2.2,2022-07-01Final Data Sheet RevisionHistory BSS126I Revision:2022-07-01,Rev.2.2 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2020-06-02 Release of final version 2.1 2020-11-30 Update Marking and typos 2.2 2022-07-01 Update "Marking" Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ¯2022InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.