BSS126

BSS126 INFINEON | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 9

Technical content

Features

• N-channel
• Depletion mode
• dv /dt rated
• Available with V GS(th) indicator on reel
• Pb-free lead plating; RoHS compliant Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T A=25 °C 0.021 A T A=70 °C 0.017 Pulsed drain current I D,pulse T A=25 °C 0.085 Reverse diode dv /dt dv /dt I D=0.016 A, V DS=20 V, di /dt =200 A/µs, T j,max=150 °C 6 kV/µs Gate source voltage V GS ±20 V ESD sensitivity (HBM) as per MIL-STD 883 Class 1 Power dissipation P tot T A=25 °C 0.50 W Operating and storage temperature T j, T stg -55 ... 150 °C IEC climatic category; DIN IEC 68-1 55/150/56 0) also available in non Pb-free on request 1) see table on next page and diagram 11 Value V DS 600 V R DS(on),max 700 Ω I DSS,min 0.007 A Product Summary PG-SOT-23 Type Package Ordering Code Tape and Reel Information Marking BSS126 0) PG-SOT-23 Q67042-S4300 E6327: 3000 pcs/reel SHs BSS126 0) PG-SOT-23 Q67042-S4300 E6906: 3000 pcs/reel sorted in V GS(th) bands1) SHs Rev. 1.3 page 1 2006-06-14

Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - ambient R thJA minimal footprint - - 250 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=-5 V, I D=250 µA 600 - - V Gate threshold voltage V GS(th) V DS=3 V, I D=8 µA -2.7 -2.0 -1.6 Drain-source cutoff current I D(off) V DS=600 V, V GS=-5 V, T j=25 °C - - 0.1 µA V DS=600 V, V GS=-5 V, T j=125 °C -- 1 0 Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA On-state drain current I DSS V GS=0 V, V DS=25 V 7-- m A Drain-source on-state resistance R DS(on) V GS=0 V, I D=3 mA - 320 700 Ω V GS=10 V, I D=16 mA - 280 500 Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=0.01 A 0.008 0.017 - S Threshold voltage V GS(th) sorted in bands2) J V GS(th) V DS=3 V, I D=8 µA -1.8 - -1.6 V K -1.95 - -1.75 L -2.1 - -1.9 M -2.25 - -2.05 N -2.4 - -2.2 2) Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific band cannot be ordered separately. Values Rev. 1.3 page 2 2006-06-14

Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics I D=f(V GS); V DS=3 V; T j=25 °C C iss -2 1 2 8 p F Output capacitance C oss - 2.4 3.2 Reverse transfer capacitance Crss - 1.0 1.5 Turn-on delay time t d(on) - 6.1 9.2 ns Rise time t r - 9.7 14.5 Turn-off delay time t d(off) -1 4 2 1 Fall time t f - 115 170 Gate Charge Characteristics Gate to source charge Q gs - 0.05 0.08 nC Gate to drain charge Q gd - 1.2 1.8 Gate charge total Q g - 1.4 2.1 Gate plateau voltage V plateau - 0.10 - V Reverse Diode Diode continous forward current I S - - 0.016 A Diode pulse current I S,pulse - - 0.064 Diode forward voltage V SD V GS=-5 V, I F=16 mA, T j=25 °C - 0.81 1.2 V Reverse recovery time t rr - 160 240 ns Reverse recovery charge Q rr - 13.2 19.8 nC V R=300 V, I F=0.01 A, di F/dt =100 A/µs T A=25 °C Values V GS=-5 V, V DS=25 V, f =1 MHz V DD=300 V, V GS=-3…7 V, I D=0.01 A, R G=6 Ω V DD=400 V, I D=10 mA, V GS=-3 to 5 V Rev. 1.3 page 3 2006-06-14

1 Power dissipation 2 Drain current

P tot=f(T A) I D=f(T A); V GS≥10 V 3 Safe operating area 4 Max. transient thermal impedance I D=f(V GS); V DS=3 V; T j=25 °C Z thJA=f(t p) parameter: t p parameter: D =t p/T 10 µs 100 µs 1 ms 10 ms DC 103102101100 10-1 10-2 10-3 10-4 V DS [V] I D [A] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10210110010-110-210-310-4 103 102 101 t p [s] Z thJA [K/W] 0.1 0.2 0.3 0.4 0.5 0.6 0 40 80 120 160 T A [°C] P tot [W] 0.005 0.01 0.015 0.02 0.025 0 40 80 120 160 T A [°C] I D [A] Rev. 1.3 page 4 2006-06-14

5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); V DS=3 V; T j=25 °C g fs=f(I D); T j=25 °C -0.2 V -0.1 V 0 V 0.1 V 0.2 V 0.5 V 1 V 10 V 100 200 300 400 500 600 700 800 900 1000 0 0.01 0.02 0.03 0.04 I D [A] R DS(on) [Ω] 0.005 0.01 0.015 0.02 0.025 -2 -1 0 1 V GS [V] I D [A] 0.005 0.01 0.015 0.02 0.025 I D [A] g fs [S] V 0.2- V 0.1- V 0 V 0.1 V 0.2 V 0.5 V 1 V 10 0.01 0.02 0.03 0.04 048 1 2 1 6 V DS [V] I D [A] Rev. 1.3 page 5 2006-06-14

9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D= 0.016mA; V GS=0 V V GS(th)=f(T j); V DS=3 V; I D = 8 µA parameter: I D 11 Threshold voltage bands 12 Typ. capacitances I D=f(V GS); V DS=3 V; T j=25 °C C =f(V DS); V GS=-3 V; f =1 MHz 8 µA JKLMN 0.001 0.01 0.1 -2.5 -2 -1.5 -1 V GS [V] I D [mA] typ %98 200 400 600 800 1000 1200 1400 1600 -60 -20 20 60 100 140 180 T j [°C] R DS(on) [Ω] typ %98 -3.5 -2.5 -1.5 -60 -20 20 60 100 140 180 T j [°C] V GS(th) [V] Ciss Coss Crss 0.1 100 0 5 10 15 20 25 30 V DS [V] C [pF] Rev. 1.3 page 6 2006-06-14

13 Forward characteristics of reverse diode 15 Typ. gate charge I F=f(V SD) V GS=f(Q gate); I D=0.1 A pulsed parameter: T j parameter: V DD

16 Drain-source breakdown voltage

I D=f(V GS); V DS=3 V; T j=25 °C 500 540 580 620 660 700 -60 -20 20 60 100 140 180 T j [°C] V BR(DSS) [V] 0.2 VDS(max) 0.5 VDS(max)

0.8 VDS(max)

0 0.4 0.8 1.2 1.6 Q gate [nC] V GS [V] 25 °C150 °C 25 °C, 98% 150 °C, 98% 0.001 0.01 0.1 0 0.5 1 1.5 2 2.5 V SD [V] I F [A] Rev. 1.3 page 7 2006-06-14

Package Outline: Footprint: Packaging: Dimensions in mm Rev. 1.3 page 8 2006-06-14

St.-Martin-Straße 53 D-81451 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide (see address list). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.3 page 9 2006-06-14