BSS124

BSS124 SIEMENS | Alldatasheet

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Semiconductor Group 1 12/05/1997 BSS 124 SIPMOS ® Small-Signal Transistor

• N channel
• Enhancement mode Pin 1 Pin 2 Pin 3 G D S Type VDS ID R DS(on) Package Marking BSS 124 400 V 0.12 A 28 Ω TO-92 SS 124 Type Ordering Code Tape and Reel Information BSS 124 Q67000-S172 E6288 Maximum Ratings Parameter Symbol Values Unit Drain source voltage VDS 400 V Drain-gate voltage R GS = 20 kΩ VDGR 400 Gate source voltage VGS ± 14 Gate-source peak voltage,aperiodic Vgs ± 20 Continuous drain current TA = 37 °C ID 0.12 A DC drain current, pulsed TA = 25 °C IDpuls 0.48 Power dissipation TA = 25 °C Ptot W

Semiconductor Group 2 12/05/1997 BSS 124 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Tj -55 ... + 150°C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air 1) R thJA ≤ 125 K/W DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 25 °C V(BR)DSS 400 - - V Gate threshold voltage VGS =VDS, ID = 1 mA VGS(th) 1.5 2 2.5 Zero gate voltage drain current VDS = 400 V, VGS = 0 V, Tj = 25 °C VDS = 400 V, VGS = 0 V, Tj = 125 °C IDSS 0.1 µA Gate-source leakage current VGS = 20 V, VDS = 0 V IGSS - 10 100 nA Drain-Source on-state resistance VGS = 10 V, ID = 0.12 A R DS(on) - 16 28 Ω

Semiconductor Group 3 12/05/1997 BSS 124 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Transconductance VDS ≥ 2 * ID * RDS(on)max, ID = 0.12 A gfs 0.1 0.19 - S Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz C iss - 90 120 pF Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz C oss - 10 15 Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz C rss - 4 6 Turn-on delay time VDD = 30 V, VGS = 10 V, ID = 0.21 A R G = 50 Ω td(on) - 5 8 ns Rise time VDD = 30 V, VGS = 10 V, ID = 0.21 A R G = 50 Ω tr - 10 15 Turn-off delay time VDD = 30 V, VGS = 10 V, ID = 0.21 A R G = 50 Ω td(off) - 18 25 Fall time VDD = 30 V, VGS = 10 V, ID = 0.21 A R G = 50 Ω tf - 15 20

Semiconductor Group 4 12/05/1997 BSS 124 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Reverse Diode Inverse diode continuous forward current TA = 25 °C IS - - 0.12 A Inverse diode direct current,pulsed TA = 25 °C ISM - - 0.48 Inverse diode forward voltage VGS = 0 V, IF = 0.24 A VSD - 0.85 1.3 V

Semiconductor Group 5 12/05/1997 BSS 124 Power dissipation Ptot = ƒ(TA) 0 20 40 60 80 100 120 °C 160 TA 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 W 1.2 Ptot Drain current ID = ƒ(TA) parameter: VGS ≥ 10 V 0 20 40 60 80 100 120 °C 160 TA 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.10 0.11 A 0.13 ID Safe operating area ID =f(VDS ) parameter : D = 0.01, TC =25°C Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) -60 -20 20 60 100 °C 160 Tj 360 370 380 390 400 410 420 430 440 450 460 V 480 V(BR)DSS

Semiconductor Group 6 12/05/1997 BSS 124 Typ. output characteristics ID = ƒ(VDS ) parameter: tp = 80 µs , Tj = 25 °C 0 2 4 6 8 10 V 14 VDS 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20 0.22 0.24 A 0.28 ID VGS [V] a a 2.5 b b 3.0 c c 3.5 d d 4.0 e e 4.5 f f 5.0 g g 5.5 h h 6.0 i i 7.0 j j 8.0 k k 9.0 l Ptot = 1W l 10.0 Typ. drain-source on-resistance R DS (on) = ƒ(ID ) parameter: tp = 80 µs, Tj = 25 °C ID Ω R DS (on) VGS [V] = a 2.5 VGS [V] = a a 3.0 b b 3.5 c c 4.0 d d 4.5 e e 5.0 f f 5.5 g g 6.0 h h 7.0 i i 8.0 j j 9.0 k k 10.0 Typ. transfer characteristics ID = f(VGS ) parameter: tp = 80 µs VDS ≥ 2 x ID x R DS(on)max 0 1 2 3 4 5 6 7 8 V 10 VGS 0.00 0.04 0.08 0.12 0.16 0.20 0.24 A 0.32 ID Typ. forward transconductance gfs = f (ID ) parameter: tp = 80 µs, VDS ≥2 x ID x R DS(on)max ID 0.00 0.05 0.10 0.15 0.20 S 0.30 gfs

7 12/05/1997Semiconductor Group BSS 124 Drain-source on-resistance R DS (on) = ƒ(Tj) parameter: ID = 0.12 A, VGS = 10 V -60 -20 20 60 100 °C 160 Tj Ω R DS (on) typ 98% Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS , ID = 1 mA 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 V 4.6 VGS(th) -60 -20 20 60 100 °C 160 Tj typ 98% Typ. capacitances C = f (VDS ) parameter:VGS =0V, f = 1 MHz 0 5 10 15 20 25 30 V 40 VDS 0 10 1 10 2 10 3 10 pF C C rss C oss C iss Forward characteristics of reverse diode IF = ƒ(VSD ) parameter: Tj, tp = 80 µs -3 10 -2 10 -1 10 0 10 A IF VSD Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%)