BSS123N INFINEON | Alldatasheet

Document overview

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Technical content

Features

  • N-channel
  • Enhancement mode
  • Logic level (4.5V rated)
  • Avalanche rated
  • Qualified according to AEC Q101
  • 100% lead-free; RoHS compliant, Halogen free Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T A=25 °C 0.19 A T A=70 °C 0.15 Pulsed drain current I D,pulse T A=25 °C 0.77 Avalanche energy, single pulse E AS I D=0.19 A, R GS=25 W 2.0 mJ Reverse diode dv /dt dv /dt I D=0.19 A, V DS=80 V, di /dt =200 A/µs, T j,max=150 °C 6 kV/µs Gate source voltage V GS ±20 V Power dissipation1) P tot T A=25 °C W Operating and storage temperature T j, T stg -55 ... 150 °C ESD Class JESD22-A114 -HBM 0 (<250V) Soldering Temperature 260 °C IEC climatic category; DIN IEC 68-1 55/150/56 Value 0.5 PG-SOT23 Type Package Tape and Reel Information Marking Halogon Free Packing BSS123N SOT23 H6327: 3000 pcs/ reel SAs Yes Non dry VDS 100 V RDS(on),max VGS=10 V 6 W VGS=4.5 V 10 ID 0.19 A Product Summary Rev 2.3 page 1 2012-11-21

Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - ambient R thJA minimal footprint 1) - - 250 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA 100 - - V Gate threshold voltage V GS(th) V DS=Vgs V, I D=13 µA 0.8 1.4 1.8 Drain-source leakage current I DSS V DS=100 V, V GS=0 V, T j=25 °C - - 0.01 mA V DS=100 V, V GS=0 V, T j=150 °C - - 5 Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 10 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=0.15 A - 2.7 10 W V GS=10 V, I D=0.19 A - 2.4 6 Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=0.15 A 0.41 - S Values 1) Performed on 40mm² FR4 PCB. The traces are 1mm wide, 70µm thick and 20mm long; they are present on both sides of the PCB Rev 2.3 page 2 2012-11-21

Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 15.7 20.9 pF Output capacitance C oss - 3.4 4.5 Reverse transfer capacitance Crss - 2.1 3.1 Turn-on delay time t d(on) - 2.3 3.5 ns Rise time t r - 3.2 4.6 Turn-off delay time t d(off) - 7.4 11.1 Fall time t f - 22 33 Gate Charge Characteristics Gate to source charge Q gs - 0.04 0.06 nC Gate to drain charge Q gd - 0.23 0.35 Gate charge total Q g - 0.6 0.9 Gate plateau voltage V plateau - 2.5 - V Reverse Diode Diode continous forward current I S - - 0.19 A Diode pulse current I S,pulse - - 0.77 Diode forward voltage V SD V GS=0 V, I F=0.19 A, T j=25 °C - 0.8 1.1 V Reverse recovery time t rr - 12 18 ns Reverse recovery charge Q rr - 4.3 6.5 nC V R=50 V, I F=0.19 A, di F/dt =100 A/µs T A=25 °C Values V GS=0 V, V DS=25 V, f =1 MHz V DD=50 V, V GS=10 V, I D=0.19 A, R G,ext=6 W V DD=50 V, I D=0.19 A, V GS=0 to 10 V Rev 2.3 page 3 2012-11-21

1 Power dissipation 2 Drain current

P tot=f(T A) I D=f(T A); V GS≥10 V 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 1 µs 10 µs 100 µs 1 ms 10 ms DC 0.0001 0.001 0.01 0.1 0.1 1 10 100 1000 ID [A] VDS [V] single pulse 0.01 0.02 0.05 0.1 0.2 0.5 100 1000 0.0001 0.001 0.01 0.1 1 10 100 ZthJA [K/W] tp [s] 0.1 0.2 0.3 0.4 0.5 0.6 0 40 80 120 160 Ptot [W] TA [°C] 0.05 0.1 0.15 0.2 0 40 80 120 160 ID [A] TA [°C] Rev 2.3 page 4 2012-11-21

5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 gfs [S] ID [A] 25 °C 150 °C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 1 2 3 4 ID [A] VGS [V]

2.8 V 3 V

3.3 V 3.5 V 4 V 4.5 V 10 V RDS(on) [W] ID [A] 2.8 V 3 V 3.3 V

3.5 V 4 V 10 V

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 2 4 6 8 10 ID [A] VDS [V] Rev 2.3 page 5 2012-11-21

9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=0.19 A; V GS=10 V V GS(th)=f(T j); V DS=VGS; I D=13 µA parameter: I D 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C I F=f(V SD) parameter: T j typ 98% -60 -20 20 60 100 140 180 RDS(on) [W] Tj [°C] 0.4 0.8 1.2 1.6 2.4 -60 -20 20 60 100 140 180 VGS(th) [V] Tj [°C] Ciss Coss Crss 100 101 102 0 10 20 30 40 50 60 70 80 90 100 C [pF] VDS [V] 25 °C 150 °C 0.001 0.01 0.1 IF [A] VSD [V] 25°C, 98% typ min max 150°C, 98% Rev 2.3 page 6 2012-11-21

13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=0.19 A pulsed parameter: T j(start) parameter: V DD

15 Drain-source breakdown voltage 16 Gate charge waveforms

V BR(DSS)=f(T j); I D=250 µA 100 104 108 112 116 120 -60 -20 20 60 100 140 180 VBR(DSS) [V] Tj [°C] 20 V 50 V 80 V 0 0.2 0.4 0.6 0.8 VGS [V] Qgate [nC] 25 °C 100 °C 125 °C 100 101 102 103 10-2 10-1 100 IAV [A] tAV [µs] V GS Q gate V gs(th) Q g(th) Q gs Q gd Q sw Q g Rev 2.3 page 7 2012-11-21

Package Outline: Footprint: Packaging: Dimensions in mm Rev 2.3 page 8 2012-11-21

81726 Munich, Germany

© 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 2.3 page 9 2012-11-21