BSS123L6327HTSA1 INFINEON | Alldatasheet

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Rev. 1.41 BSS123 SIPMOS  Small-Signal-Transistor Product Summary VDS 100 V RDS(on) 6 Ω ID 0.17 A Feature

  • N-Channel
  • Enhancement mode
  • Logic Level
  • dv/dt rated PG-SOT23 VPS05161 Gate pin1 Drain pin 3 Source pin 2 Marking SAs SAs Type Package Pb-free Tape and Reel Information BSS123 PG-SOT23 Yes L6327: 3000 pcs/reel BSS123 PG-SOT23 Yes L6433: 10000 pcs/reel Maximum Ratings , at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current TA=25°C TA=70°C ID 0.17 0.14 A Pulsed drain current TA=25°C ID puls 0.68 Reverse diode dv/dt IS=0.17A, VDS =80V, di/dt=200A/µs, Tjmax=150°C dv/dt 6 kV/µs Gate source voltage VGS ±20 V ESD Sensitivity (HBM) as per MIL-STD 883 Class 1a Power dissipation TA=25°C Ptot 0.36 W Operating and storage temperature Tj , Tstg -55... +150 °C IEC climatic category; DIN IEC 68-1 55/150/56
  • Qualified according to AEC Q101

Rev. 1.41 BSS123 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - ambient at minimum footprint R thJA - - 350 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage V GS =0, ID =250µA V(BR)DSS 100 - - V Gate threshold voltage, VGS = VDS ID=50µA VGS(th) 0.8 1.4 1.8 Zero gate voltage drain current V DS =100V, VGS =0, Tj=25°C V DS =100V, VGS =0, Tj=150°C IDSS 0.01 µA Gate-source leakage current V GS =20V, VDS =0 IGSS - - 10 nA Drain-source on-state resistance V GS =4.5V, ID=0.13A R DS(on) - 4 10 Ω Drain-source on-state resistance V GS =10V, ID =0.17A R DS(on) - 3 6

Rev. 1.41 BSS123 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs V DS ≥2*ID*R DS(on)max, ID=0.14A 0.09 0.19 - S Input capacitance Ciss V GS =0, V DS =25V, f=1MHz - 55 69 pF Output capacitance Coss - 8.5 10.6 Reverse transfer capacitanceCrss - 5 6.3 Turn-on delay time td(on) V DD =50V, VGS =10V, ID=0.17A, R G =6Ω - 2.7 4 ns Rise time tr - 3.1 4.6 Turn-off delay time td(off) - 9.9 14.8 Fall time tf - 25 37 Gate Charge Characteristics Gate to source charge Q gs VDD =80V, ID =0.17A - 0.055 0.082 nC Gate to drain charge Q gd - 0.77 1.15 Gate charge total Q g VDD =80V, ID =0.17A, VGS =0 to 10V - 1.78 2.67 Gate plateau voltage V(plateau)VDD =80V, ID = 0.17 A - 2.6 - V Reverse Diode Inverse diode continuous forward current IS TA=25°C - - 0.17 A Inv. diode direct current, pulsedISM - - 0.68 Inverse diode forward voltageVSD V GS =0, IF = IS - 0.81 1.2 V Reverse recovery time trr V R=50V, IF=lS , diF/dt=100A/µs - 27.6 41.1 ns Reverse recovery charge Q rr - 10.5 15.7 nC

Rev. 1.41 BSS123

1 Power dissipation

Ptot = f (TA ) 0 20 40 60 80 100 120 °C 160 TA 0.04 0.08 0.12 0.16 0.2 0.24 0.28 0.32 W 0.38 BSS123 P tot

2 Drain current

I D = f (TA) parameter: VGS ≥ 10 V 0 20 40 60 80 100 120 °C 160 TA 0.02 0.04 0.06 0.08 0.1 0.12 0.14 A 0.18 BSS123 ID

3 Safe operating area

I D = f ( VDS ) parameter : D = 0 , TA = 25 °C 10 0 10 1 10 2 10 3 V VDS -3 10 -2 10 -1 10 0 10 1 10 A BSS123 ID R DS(on) = V DS / I D DC 10 ms 1 ms tp = 120.0µs

4 Transient thermal impedance

Z thJA = f (tp) parameter : D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 K/W BSS123 ZthJA single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

Rev. 1.41 BSS123 5 Typ. output characteristic ID = f (VDS ) parameter: Tj = 25 °C, VGS 0 0.5 1 1.5 2 2.5 3 3.5 4 V 5 VDS 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 A 0.7 ID 10V 4.5V 4.1V 3.9V 3.7V 3.5V 3.1V 2.9V 2.3V 6 Typ. drain-source on resistance RDS(on) = f (ID ) parameter: Tj = 25 °C, VGS ID Ω R DS(on) 2.3V 2.9V 3.1V 3.5V 3.7V 3.9V 4.1V 4.5V 5.0V 10V 7 Typ. transfer characteristics ID = f ( VGS ); VDS ≥ 2 x ID x RDS(on)max parameter: Tj = 25 °C 0 0.5 1 1.5 2 2.5 3 3.5 4 V 5 VGS 0.1 0.2 0.3 0.4 0.5 A 0.7 ID 8 Typ. forward transconductance gfs = f(ID ) parameter: Tj = 25 °C ID 0.05 0.1 0.15 0.2 0.25 0.3 S 0.4 gfs

Rev. 1.41 BSS123

9 Drain-source on-state resistance

R DS(on) = f (Tj) parameter : ID = 0.17 A, VGS = 10 V -60 -20 20 60 100 °C 180 Tj Ω BSS123 R DS(on) typ 98% 10 Typ. gate threshold voltage V GS(th) = f (Tj) parameter: VGS = VDS ; ID =50µA -60 -20 20 60 100 °C 160 Tj 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 V 2.2 V GS(th) typ. 98% 11 Typ. capacitances C = f ( VDS ) parameter: VGS =0, f=1 MHz, Tj = 25 °C 0 4 8 12 16 20 24 28 V 36 VDS 0 10 1 10 2 10 3 10 pF C C rss C iss C oss 12 Forward character. of reverse diode I F = f (VSD ) parameter: Tj VSD -3 10 -2 10 -1 10 0 10 A BSS123 IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%)

Rev. 1.41 BSS123 13 Typ. gate charge VGS = f (Q G ); parameter: VDS , ID = 0.17 A pulsed, Tj = 25 °C Q G V BSS123 V GS

0.2 VDS max

0.5 VDS max

0.8 VDS max

14 Drain-source breakdown voltage

V(BR)DSS = f (Tj) -60 -20 20 60 100 °C 180 Tj 100 102 104 106 108 110 112 114 V 120 BSS123 V (BR)DSS

81726 Munich, Germany

© 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 2010-05-12Page 7 Rev. 1.41 BSS123 13 Typ. gate charge VGS = f (Q G ); parameter: VDS , ID = 0.17 A pulsed, Tj = 25 °C 2010-05-12Page 7 Rev. 1.41 BSS123 13 Typ. gate charge VGS = f (Q G ); parameter: VDS , ID = 0.17 A pulsed, Tj = 25 °C 2010-05-12Page 7 Rev. 1.41 BSS123 13 Typ. gate charge VGS = f (Q G ); parameter: VDS , ID = 0.17 A pulsed, Tj = 25 °C 2010-05-12Page 7 Rev. 1.41 BSS123 13 Typ. gate charge VGS = f (Q G ); parameter: VDS , ID = 0.17 A pulsed, Tj = 25 °C 2010-05-12Page 6 Rev. 1.41 BSS123 R DS(on) = f (Tj) parameter : ID = 0.17 A, VGS = 10 V 2010-05-12Page 7 Rev. 1.41 BSS123 13 Typ. gate charge VGS = f (Q G ); parameter: VDS , ID = 0.17 A pulsed, Tj = 25 °C 2010-05-12Page 7 Rev. 1.41 BSS123 13 Typ. gate charge VGS = f (Q G ); parameter: VDS , ID = 0.17 A pulsed, Tj = 25 °C 2010-05-12 Pag 8 BSS123