BSS123 NEXPERIA | Alldatasheet
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Technical content
Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. use http://www.nexperia.com salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e -mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia
Philips Semiconductors Product specification N-channel TrenchMOS transistor BSS123 Logic level FET FEATURES SYMBOL QUICK REFERENCE DATA ’Trench’ technology Extremely fast switching VDSS = 100 V Logic level compatible Subminiature surface mounting ID = 150 mA package R DS(ON) ≤ 6 Ω (VGS = 10 V) GENERAL DESCRIPTION PINNING SOT23 N-channel enhancement mode PIN DESCRIPTION field-effect transistor in a plastic envelope using ’ trench’ 1 gate technology. 2 source Applications:- Relay driver 3 drain High-speed line driver Telephone ringer The BSS123 is supplied in the SOT23 subminiature surface mounting package. LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSS Drain-source voltage T j = 25 ˚C to 150˚C - 100 V VDGR Drain-gate voltage T j = 25 ˚C to 150˚C; RGS = 20 kΩ - 100 V VGS Gate-source voltage - ± 20 V ID Continuous drain current Ta = 25 ˚C - 150 mA IDM Pulsed drain current T a = 25 ˚C - 600 mA PD Total power dissipation T a = 25 ˚C - 0.25 W Tj, Tstg Operating junction and - 55 150 ˚C storage temperature THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT R th j-a Thermal resistance junction surface mounted on FR4 board 500 - K/W to ambient d g s 1 2 Top view August 2000 1 Rev 1.000
Philips Semiconductors Product specification N-channel TrenchMOS transistor BSS123 Logic level FET
ELECTRICAL CHARACTERISTICS
Tj= 25˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS Drain-source breakdown V GS = 0 V; ID = 10 µA 100 130 - V voltage VGS(TO) Gate threshold voltage V DS = VGS ; ID = 1 mA 1 2 2.8 V R DS(ON) Drain-source on-state V GS = 10 V; ID = 120 mA - 3.5 6 Ω resistance gfs Forward transconductance VDS = 25 V; ID = 120 mA - 350 - mS IDSS Zero gate voltage drain V DS = 60 V; VGS = 0 V - 10 100 nA current IGSS Gate source leakage current VGS = ±20 V; VDS = 0 V - 10 100 nA ton Turn-on time V DD = 50 V; RD = 250 Ω ; VGS = 10 V; - 3 10 ns R G = 50 Ω ; Resistive load toff Turn-off time - 12 20 ns C iss Input capacitance V GS = 0 V; VDS = 25 V; f = 1 MHz - 23 40 pF C oss Output capacitance - 6 25 pF C rss Feedback capacitance - 4 10 pF August 2000 2 Rev 1.000
Philips Semiconductors Product specification N-channel TrenchMOS transistor BSS123 Logic level FET MECHANICAL DATA Fig.1. SOT23 surface mounting package. Notes 1. This product is supplied in anti-static packaging. The gate-source input must be protected against static discharge during transport or handling. 2. Refer to SMD Footprint Design and Soldering Guidelines, Data Handbook SC18. 3. Epoxy meets UL94 V0 at 1/8". UNIT A 1 max. bp cD E e1 H E Lp Qw v REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE 97-02-28 IEC JEDEC EIAJ mm 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 0.95 e 1.9 2.5 2.1 0.55 0.45 0.10.2 DIMENSIONS (mm are the original dimensions) 0.45 0.15 SOT23 bp D e A Lp Q detail X H E E w M v M A B AB 0 1 2 mm scale A 1.1 0.9 c X Plastic surface mounted package; 3 leads SOT23 August 2000 3 Rev 1.000
Philips Semiconductors Product specification N-channel TrenchMOS transistor BSS123 Logic level FET DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 2000 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. August 2000 4 Rev 1.000