BSR92P INFINEON | Alldatasheet

Document overview

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Technical content

Features

  • P-Channel
  • Enhancement mode / Logic level
  • Avalanche rated
  • Pb-free lead plating; RoHS compliant
  • Footprint compatible to SOT23 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T A=25 °C A T A=70 °C Pulsed drain current I D,pulse T A=25 °C Avalanche energy, single pulse E AS I D=-0.14 A, R GS=25 Ω mJ Gate source voltage V GS V Power dissipation P tot T C=25 °C W Operating and storage temperature T j, T stg °C ESD class JESD22-A114 (HBM) Soldering temperature IEC climatic category; DIN IEC 68-1 -0.14 -0.11 0.5 Value -0.56 steady state 55/150/56 -55 ... 150 ±20 260 °C 1A (250V to 500V) V DS -250 V R DS(on),max 11 Ω I D -0.14 A Product Summary Type Package Tape and Reel Information Marking Lead free Packing BSR92P PG-SC59 L6327 = 3000 pcs. / reel LD Yes Non dry PG-SC59 Rev 1.02 page 1 2009-02-16

Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - ambient R thJA minimal footprint, steady state - - 250 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=-250 µA -250 - - V Gate threshold voltage V GS(th) V DS=V GS, Zero gate voltage drain current I DSS V DS=-250 V, V GS=0 V, V DS=-250 V, V GS=0 V, T j=150 °C - -10 -100 Gate-source leakage current I GSS V GS=-20 V, V DS=0 V - -10 -100 nA V GS=-2.8 V, I D=-0.025 A -1 1 2 0 Drain-source on-state resistance R DS(on) V GS=-4.5 V, I D=-

0.13 A -9 1 3 Ω

V GS=-10 V, I D=-0.14 A -8 1 1 Transconductance g fs |V DS|>2|I D|R DS(on)max, Values Rev 1.02 page 2 2009-02-16

Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 82 109 pF Output capacitance C oss -1 2 1 6 Reverse transfer capacitance C rss -58 Turn-on delay time t d(on) - 6.4 9.0 ns Rise time t r - 6.3 9.0 Turn-off delay time t d(off) - 75.0 112 Fall time t f - 71.0 163 Gate Charge Characteristics2) Gate to source charge Q gs - -0.2 -0.3 nC Gate to drain charge Q gd - -1.2 -1.8 Gate charge total Q g - -3.6 -4.8 Gate plateau voltage V plateau - -2.7 - V Reverse Diode Diode continuous forward current I S - - -0.14 A Diode pulse current I S,pulse - - -0.56 Diode forward voltage V SD V GS=0 V, I F=0.14 A, Reverse recovery time t rr -6 6- n s Reverse recovery charge Q rr - 125 - nC 2) See figure 16 for gate charge parameter definition T C=25 °C Values V GS=0 V, V DS=-25 V, f =1 MHz V DD=-125 V, V GS=-10 V, I D=-0.14 A, R G=6 Ω V DD=-200 V, I D=-

0.14 A, V GS=0 to -10 V

V R=125 V, I F=|I S|, di F/dt =100 A/µs Rev 1.02 page 3 2009-02-16

1 Power dissipation 2 Drain current

P tot=f(T C) I D=f(T C); |V GS|≥10 V 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 100 µs 1 ms 10 ms 100 ms DC 10310210110010-1 100 10-1 10-2 10-3 -V DS [V] -I D [A] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10210110010-110-210-310-410-5 103 102 101 100 10-1 t p [s] Z thJS [K/W] 0.1 0.2 0.3 0.4 0.5 0.6 0 40 80 120 160 T A [°C] P tot [W] 0.05 0.1 0.15 0 40 80 120 160 T A [°C] -I D [A] Rev 1.02 page 4 2009-02-16

5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j -2.5 V -3 V -3.5 V -4.5 V -6 V -10 V 0 0.1 0.2 0.3 0.4 -I D [A] R DS(on) [Ω] 25 °C 150 °C 0.1 0.2 0.3 0.4 0.5 01234 -V GS [V] -I D [A] 0.1 0.2 0.3 0.4 -I D [A] g fs [S] 2 V 2.5 V 3 V 3.5 V 4.5 V

6 V10 V

0.1 0.2 0.3 0.4 0.5 012345 V DS [V] I D [A] Rev 1.02 page 5 2009-02-16

9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=-0.14 A; V GS=-10 V V GS(th)=f(T j); V GS=V DS; I D=-130 µA 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j Ciss Coss Crss 100 1000 0 2 04 06 08 0 1 0 0 -V DS [V] C [pF] 0.5 1.5 2.5 -60 -20 20 60 100 140 T j [°C] -V GS(th) [V] max min typ 25 °C 150 °C 25°C, 98% 150°C, 98% 0.001 0.01 0.1 0 0.4 0.8 1.2 1.6 -V SD [V] I F [A] 10V 98% -60 -40 -20 0 20 40 60 80 100 120 140 160 T j [°C] R DS(on) [mΩ] Rev 1.02 page 6 2009-02-16

13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=-0.14 A pulsed parameter: T j(start) parameter: V DD

15 Drain-source breakdown voltage 16 Gate charge waveforms

V BR(DSS)=f(T j); I D=-250 µA 200 210 220 230 240 250 260 270 280 290 300 -60 -20 20 60 100 140 T j [°C] -V BR(DSS) [V] V GS Q gate V gs(t h ) Q g(th) Q gs Q gd Q sw Q g 25 °C 100 °C 125 °C 103102101100 100 10-1 10-2 t AV [µs] -I AV [A] 50 V 125 V 200 V 0123 - Qgate [nC] - VGS [V] Rev 1.02 page 7 2009-02-16

SC-59: Outline Footprint Packaging Tape Dimensions in mm Rev 1.02 page 8 2009-02-16

81726 München, Germany

© Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions o characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typica values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties o non-infringement of intellectual property rights of any third party Information For further information on technology, delivery terms and conditions and prices please contact your neares Infineon Technologies Office (www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 1.02 page 9 2009-02-16