BSR52 NJSEMI | Alldatasheet
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Technical content
dV. s.iv 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 NPN Darlington transistor BSR52
FEATURES
- High current (max. 1 A)
- Low voltage (max. 80 V)
- Integrated diode and resistor.
APPLICATIONS
- Industrial high gain amplification. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCES VEBO Ic 'CM IB Ptot Tstg Tj 'amb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current base current (DC) total power dissipation storage temperature junction temperature ambient temperature CONDITIONS open emitter VBE = 0 V open collector Tamb < 25 °C; note 1 MIN. I-65 -65 MAX. 100 830 +150 150 +150 UNIT V V V A A mA mW °rn* o/"4 Note 1. Transistor mounted on an FR4 printed-circuit board. NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
RthG-a) PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 150 UNIT K/W Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICES IEBO HFE VcEsat VBEsat fr PARAMETER collector-base cut-off current emitter-base cut-off current DC current gain collector-emitter saturation voltage base-emitter saturation voltage transition frequency CONDITIONS VBE = 0 V; VCE = 80 V VEB = 4 V; lc = 0 A VCE- 10V; see Fig. 2 lc = 150mA lc = 500 mA IC = 0.5A; IB = 0.5mA lc= 1 A; IB = 4mA IC = 0.5A; IB = 0.5mA lc = 1 A; IB = 4mA VCE = 5 V; lc = 500 mA; f= 100MHz MIN. 1000 2000 TYP. 200 MAX. 1.3 1.6 1.9 2.2 UNIT nA nA V V V V MHz Switching times (between 10% and 90% levels); see Fig 3 ton toff turn-on time turn-off time Icon = 500 mA; lBon = 0.5 mA; \\Boa = -0.5 mA 500 1300 ns ns
F B D +A + A D I jj t SEC DIM A I B I C D E F G H J K L M N MIN. 4.32 4.45 3.18 0.41 0.35 1.14 1.03 12.70 MAX. 5.33 5.20 4.19 0.55 0.50 5.40 1.40 2.54 1.20
5 DEC
1.982 1.20 2.082 1.40 All dimensions are in mm Mold _ Parting Line PIN CONFIGURATION 1. COLLECTOR 2. BASE 3. EMITTER