BSR202N INFINEON | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 9
Technical content
Features
- N-channel
- Enhancement mode
- Super Logic level (2.5V rated)
- Avalanche rated
- Footprint compatible to SOT23
- dv /dt rated
- Pb-free lead plating; RoHS compliant Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T A=25 °C 3.8 A T A=25 °C 3.1 Pulsed drain current I D,pulse T A=25 °C 15.2 Avalanche energy, single pulse E AS I D=3.8 A, R GS=25 Ω 30 mJ Reverse diode dv /dt dv /dt I D=3.8 A, V DS=16 V, di /dt =200 A/µs, T j,max=150 °C 6 kV/µs Gate source voltage V GS ±12 V Power dissipation P tot T A=25 °C 0.5 W Operating and storage temperature T j, T stg -55 ... 150 °C ESD Class JESD22-A114-HBM 0 (0V to 250V) Soldering Temperature 260 °C IEC climatic category; DIN IEC 68-1 55/150/56 Value PG-SC-59 Type Package Tape and Reel Information Marking Lead Free Packing BSR202N PG-SC-59 L6327 = 3000 pcs. / reel LAs Yes Non dry 1 2 V DS 20 V R DS(on),max V GS=4.5 V 21 mΩ V GS=2.5 V 33 I D 3.8 A Product Summary Rev. 1.07 page 1 2010-03-25
Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - minimal footprint R thJA - - 250 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS= 0 V, I D= 250 µA 20 - - V Gate threshold voltage V GS(th) V DS=VGS , I D=30 µA 0.7 0.95 1.2 Drain-source leakage current I DSS V DS=20 V, V GS=0 V, T j=25 °C --1 µA V DS=20 V, V GS=0 V, T j=150 °C - - 100 Gate-source leakage current I GSS V GS=12 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=2.5 V, I D=3 A -2 5 3 3 mΩ V GS=4.5 V, I D=3.8 A -1 7 2 1 Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=3.8 A 17 - S Values Rev. 1.07 page 2 2010-03-25
Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 863 1147 pF Output capacitance C oss - 278 370 Reverse transfer capacitance Crss -4 0 6 0 Turn-on delay time t d(on) - 8.8 - ns Rise time t r - 16.7 - Turn-off delay time t d(off) -1 9- Fall time t f - 3.7 - Gate Charge Characteristics Gate to source charge Q gs - 1.66 2.21 nC Gate to drain charge Q gd - 1.1 1.6 Gate charge total Q g - 5.8 8.8 Gate plateau voltage V plateau - 1.9 - V Reverse Diode Diode continous forward current I S - - 0.8 A Diode pulse current I S,pulse - - 15.2 Diode forward voltage V SD V GS=0 V, I F=3.8 A, T j=25 °C - 0.8 1.1 V Reverse recovery time t rr - 14.3 ns Reverse recovery charge Q rr - 7.6 - nC V R=10 V, I F=3.8 A, di F/dt =100 A/µs T A=25 °C Values V GS=0 V, V DS=10 V, f =1 MHz V DD=10 V, V GS=4.5 V, I D=3.8 A, R G=6 Ω V DD=10 V, I D=3.8 A, V GS=0 to 4.5 V Rev. 1.07 page 3 2010-03-25
1 Power dissipation 2 Drain current
P tot=f(T A) I D=f(T A); V GS≥4.5 V 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 10 µs 100 µs1 ms 10 ms DC 10210110010-110-2 102 101 100 10-1 10-2 10-3 V DS [V] I D [A] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10110010-110-210-310-4 103 102 101 100 10-1 t p [s] Z thJA [K/W] 0.1 0.2 0.3 0.4 0.5 0.6 0 40 80 120 160 T A [°C] P tot [W] 0 40 80 120 160 T A [°C] I D [A] Rev. 1.07 page 4 2010-03-25
5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 1.8 V 2 V 2.2 V 2.5 V 3 V 3.5 V 4.5 V 6 V 0 4 8 12 16 I D [A] R DS(on) [mΩ] 01234 I D [A] g fs [S] 1.6 V 1.8 V 2 V 2.2 V 2.4 V 2.5 V 3 V 4.5 V 0123 V DS [V] I D [A] 25 °C 150 °C 0123 V GS [V] I D [A] Rev. 1.07 page 5 2010-03-25
9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=3.8 A; V GS=4.5 V V GS(th)=f(T j); V DS=VGS; I D=30 µA parameter: I D 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C I F=f(V SD) parameter: T j typ 98 % -60 -20 20 60 100 140 T j [°C] R DS(on) [mΩ] typ 98 % 2 % 0.4 0.8 1.2 1.6 -60 -20 20 60 100 140 T j [°C] V GS(th) [V] Ciss Coss Crss 101 102 103 104 0 5 10 15 20 V DS [V] C [pF] 25 °C 150 °C 25 °C, 98% 150 °C, 98% 102 101 100 10-1 10-2 10-3 0 0.4 0.8 1.2 1.6 V SD [V] I F [A] Rev. 1.07 page 6 2010-03-25
13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=3.8 A pulsed parameter: T j(start) parameter: V DD
15 Drain-source breakdown voltage 16 Gate charge waveforms
V BR(DSS)=f(T j); I D=250 µA -60 -20 20 60 100 140 T j [°C] V BR(DSS) [V] 4 V 10 V 16 V 02468 1 0 1 2 1 4 Q gate [nC] V GS [V] 25 °C 100 °C 125 °C 103102101100 101 100 10-1 t AV [µs] I AV [A] V GS Q gate V gs(t h ) Q g(th) Q gs Q gd Q sw Q g Rev. 1.07 page 7 2010-03-25
Package Outline: Footprint: Dimensions in mm PG-SC59 3x0.4+0.05 -0.1 M0.1 0.95 0.95 (0.55) 3±0.1 +0.22.8-0.1 0.15 MAX. 1.1±0.1 0.2+0.1 +0.1 -0.050.15 0˚...8˚ MAX. GPS09473 0.45 ±0.15 +0.15 -0.31.6 0.1M 0.1 0.8 HLG09474 0.91.30.9 1.2 Rev. 1.07 page 8 2010-03-25
81726 Munich, Germany
© 2007 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user Rev. 1.07 page 9 2010-03-25