BSR1AM-12

BCR1AM-12 MITSUBISHI | Alldatasheet

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Feb.1999 APPLICATION Contactless AC switches, heating, refrigerator, washing machine, electric fan, vending machines, trigger circuit for low and medium triac, solid state relay, other general purpose control applications MITSUBISHI SEMICONDUCTOR 〈TRIAC 〉 BCR1AM-12 LOW POWER USE GLASS PASSIVATION TYPE BCR1AM-12 Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Conditions Commercial frequency, sine full wave 360° conduction, T c=56°C ]4 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Unit A A A2s W W V A g Ratings 1.0 0.41 0.1 –40 ~ +125 –40 ~ +125 0.23 Symbol VDRM VDSM Parameter Repetitive peak off-state voltage ]1 Non-repetitive peak off-state voltage ]1 Voltage class 600 720 Unit V V MAXIMUM RATINGS ]1. Gate open. TYPE NAME VOLTAGE CLASS2 1/CR 2/CR T

1 TERMINAL

φ5.0 MAX 4.4 5.0 MAX12.5 MIN

3.9 MAX

1.3 1.25 1.25CIRCUMSCRIBE CIRCLE φ0.7 1 3 2 OUTLINE DRAWING Dimensions in mm JEDEC : TO-92

Feb.1999 102 101 100 10–1 TC = 25°C 100 23 5 7 1 0 1 23 5 7 1 0 244 MAXIMUM ON-STATE CHARACTERISTICS ON-STATE CURRENT (A) ON-STATE VOLTAGE (V) RATED SURGE ON-STATE CURRENT SURGE ON-STATE CURRENT (A) CONDUCTION TIME (CYCLES AT 60Hz) MITSUBISHI SEMICONDUCTOR 〈TRIAC 〉 BCR1AM-12 LOW POWER USE GLASS PASSIVATION TYPE Symbol IDRM VTM VFGT ! VRGT ! VRGT # VFGT # IFGT ! IRGT ! IRGT # IFGT # VGD R th (j-c) (dv/dt)c Test conditions Tj=125°C, VDRM applied Tc=25°C, ITM =1.5A, Instantaneous measurement Tj=25°C, VD =6V, RL=6Ω , RG =330Ω Tj=25°C, VD =6V, RL=6Ω , RG =330Ω Tj=125°C, VD=1/2VDRM Junction to case ]4 Unit mA V V V V V mA mA mA mA V °C/W V/µs Typ. ]2. Measurement using the gate trigger characteristics measurement circuit. ]3. The critical-rate of rise of the off-state commutating voltage is shown in the table below. ]4. Case temperature is measured at the T2 terminal 1.5mm away from the molded case. Test conditionsVoltage class VDRM (V) 600 Unit V/µs Commutating voltage and current waveforms (inductive load) (dv/dt) c Min.

ELECTRICAL CHARACTERISTICS

Repetitive peak off-state current On-state voltage Gate trigger voltage ]2 Gate trigger current ]2 Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state commutating voltage 1. Junction temperature Tj=125°C 2. Rate of decay of on-state commutating current (di/dt)c=–0.5A/ms 3. Peak off-state voltage VD =400V Limits Min. 0.1 Max. 1.0 1.6 2.0 2.0 2.0 2.0 SUPPLY VOLTAGE TIME TIME TIME MAIN CURRENT MAIN VOLTAGE (di/dt)c VD(dv/dt)c PERFORMANCE CURVES

Feb.1999 10–1 23100 571 01 23 57 1 02 23 57 1 03 101 100 10–2 VGM = 6V PGM = PG(AV) = 0.1W IGM = 1A VGD = 0.1V IFGT III IFGT I IRGT I IRGT III MAXIMUM ON-STATE POWER DISSIPATION ON-STATE POWER DISSIPATION (W) RMS ON-STATE CURRENT (A) ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT CASE TEMPERATURE (°C) RMS ON-STATE CURRENT (A) GATE VOLTAGE (V) GATE CURRENT (mA) GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE JUNCTION TEMPERATURE (°C) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE JUNCTION TEMPERATURE (°C) 101 103 –60 –20 20 102 60 100 140 –40 0 40 80 120 VRGT III, VFGT III VFGT I, VRGT I TYPICAL EXAMPLE 101 103 –60 –20 20 102 60 100 140 –40 0 40 80 120 IRGT III, IFGT III IFGT I, IRGT I TYPICAL EXAMPLE 2.0 1.6 1.2 0.8 0.4 0 2.00 0.4 0.8 1.2 1.6 360° CONDUCTION RESISTIVE, INDUCTIVE LOADS 160 120 100 0 1.60 0.2 0.6 1.0 1.4 140 0.4 0.8 1.2 360° CONDUCTION CURVES APPLY REGARDLESS OF CONDUCTION ANGLE RESISTIVE, INDUCTIVE LOADS MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS TRANSIENT THERMAL IMPEDANCE (°C/W) CONDUCTION TIME (CYCLES AT 60Hz) 101 2310–1 571 00 23 57 1 01 23 57 1 02 103 102 100 23102 571 03 23 57 1 04 23 57 1 05 JUNCTION TO AMBIENT JUNCTION TO CASE GATE CHARACTERISTICS 100 (%)GATE TRIGGER CURRENT (T j = t°C) GATE TRIGGER CURRENT (T j = 25°C) 100 (%)GATE TRIGGER VOLTAGE (Tj = t°C) GATE TRIGGER VOLTAGE (Tj = 25°C) MITSUBISHI SEMICONDUCTOR 〈TRIAC 〉 BCR1AM-12 LOW POWER USE GLASS PASSIVATION TYPE

Feb.1999 LACHING CURRENT VS. JUNCTION TEMPERATURE LACHING CURRENT (mA) JUNCTION TEMPERATURE (°C) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT AMBIENT TEMPERATURE (°C) RMS ON-STATE CURRENT (A) REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE JUNCTION TEMPERATURE (°C) BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE JUNCTION TEMPERATURE (°C) HOLDING CURRENT VS. JUNCTION TEMPERATURE JUNCTION TEMPERATURE (°C) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) 100 (%)BREAKOVER VOLTAGE (dv/dt = xV/µs) BREAKOVER VOLTAGE (dv/dt = 1V/µs) 160 100 0 14040–40–60 –20 0 20 60 80 140 100120 120 TYPICAL EXAMPLE 101 103 –60 –20 20 102 60 100 140 –40 0 40 80 120 TYPICAL EXAMPLE 14040–40–60 –20 0 20 60 80 100120 105 104 103 102 TYPICAL EXAMPLE 160 120 100 0 1.60 0.2 0.6 1.0 1.4 140 0.4 0.8 1.2 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE NATURAL CONVECTION NO FINS RESISTIVE, INDUCTIVE LOADS 100 (%)HOLDING CURRENT (Tj = t°C) HOLDING CURRENT (Tj = 25°C) 100 (%)REPETITIVE PEAK OFF-STATE CURRENT (Tj = t°C) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25°C) 100 (%)BREAKOVER VOLTAGE (Tj = t°C) BREAKOVER VOLTAGE (Tj = 25°C) 140–60 –20 20 60 100 103 102 101 100 –40 0 40 80 120 +, G+ – , G– – , G+ +, G– TYPICAL EXAMPLE TYPICAL EXAMPLE DISTRIBUTION 23100 571 01 23 57 1 02 23 57 1 03 120 100 140 160 TYPICAL EXAMPLE Tj = 125°C I QUADRANT III QUADRANT MITSUBISHI SEMICONDUCTOR 〈TRIAC 〉 BCR1AM-12 LOW POWER USE GLASS PASSIVATION TYPE

Feb.1999 COMMUTATION CHARACTERISTICS CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/µs) RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A/ms) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH GATE CURRENT PULSE WIDTH (µs) 100 (%)GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC ) 101 103 100 23 5 7 1 0 1 102 23 5 7 1 0 2 IRGT III IFGT I IRGT I IFGT III TYPICAL EXAMPLE 101 10–1 23 5 7 1 0 0 100 23 5 7 1 0 1 4410–1 TC = 125°C IT = 1A τ = 500µs VD = 200V TYPICAL EXAMPLE I QUADRANT III QUADRANTMINIMUM CHARAC- TERISTICS VALUE MITSUBISHI SEMICONDUCTOR 〈TRIAC 〉 BCR1AM-12 LOW POWER USE GLASS PASSIVATION TYPE 6Ω 6Ω 6Ω 6Ω 6V 6V 6V 6V R G R G R G R G A V A V A V A V TEST PROCEDURE 1 TEST PROCEDURE 3 TEST PROCEDURE 2 TEST PROCEDURE 4 GATE TRIGGER CHARACTERISTICS TEST CIRCUITS