BSP92P

BSP92P INFINEON | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 8

Technical content

SIPMOS Small-Signal-Transistor Product Summary VDS -250 V RDS(on) 12 Ω ID -0.26 A Feature

• P-Channel
• Enhancement mode
• Logic Level
• dv/dt rated SOT-223 VPS051631 Gate pin1 Drain pin 2/4 Source pin 3 Marking BSP92P Type Package Ordering Code Tape and Reel Information BSP 92 P SOT-223 Q67042-S4169 - Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current TA=25°C TA=70°C ID -0.26 -0.23 A Pulsed drain current TA=25°C ID puls -1.04 Reverse diode dv/dt IS=-0.26A, VDS=-200V, di/dt=-200A/µs, Tjmax=150°C dv/dt 6 kV/µs Gate source voltage VGS ±20 V Power dissipation TA=25°C Ptot 1.8 W Operating and storage temperature Tj , Tstg -55... +150 °C IEC climatic category; DIN IEC 68-1 55/150/56

Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - soldering point (Pin 4) RthJS - 15 25 K/W SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) RthJA 115 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage VGS=0, ID=-250µA V(BR)DSS -250 - - V Gate threshold voltage, VGS = VDS ID=-130µA VGS(th) -1 -1.5 -2 Zero gate voltage drain current VDS=-250V, VGS=0, Tj=25°C VDS=-250V, VGS=0, Tj=150°C IDSS -0.1 -10 -0.2 -100 µA Gate-source leakage current VGS=-20V, VDS=0 IGSS - -10 -100 nA Drain-source on-state resistance VGS=-2.8V, ID=-0.025A RDS(on) - 10 20 Ω Drain-source on-state resistance VGS=-4.5V, ID=-0.23A RDS(on) - 8.2 15 Drain-source on-state resistance VGS=-10V, ID=-0.26A RDS(on) - 7.5 12 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs |VDS|≥2*|ID|*RDS(on)max , ID=-0.23A 0.29 0.57 - S Input capacitance Ciss VGS=0, VDS=-25V, f=1MHz - 83 104 pF Output capacitance Coss - 13 16 Reverse transfer capacitance Crss - 6 8 Turn-on delay time td(on) VDD=-125V, VGS=-10V, ID=-0.26A, RG=6Ω - 5 8 ns Rise time tr - 6 9 Turn-off delay time td(off) - 67 101 Fall time tf - 33 50 Gate Charge Characteristics Gate to source charge Qgs VDD=-200V, ID=-0.26A - -0.1 -0.13 nC Gate to drain charge Qgd - -1.9 -2.4 Gate charge total Qg VDD=-200V, ID=-0.26A, VGS=0 to -10V - -4.3 -5.4 Gate plateau voltage V(plateau) VDD=-200V, ID=-0.26A - -2.9 -3.6 V Reverse Diode Inverse diode continuous forward current IS TA=25°C - - -0.26 A Inv. diode direct current, pulsed ISM - - -1.04 Inverse diode forward voltage VSD VGS=0, IF=-0.26A - -0.83 -1.21 V Reverse recovery time trr VR=-125V, IF=lS, diF/dt=100A/µs - 51 64 ns Reverse recovery charge Qrr - 76 95 nC

1 Power dissipation

Ptot = f (TA) 0 20 40 60 80 100 120 °C 160 TA 0.2 0.4 0.6 0.8 1.2 1.4 1.6 W 1.9 BSP 92 P Ptot

2 Drain current

ID = f (TA) parameter: |VGS| ≥ 10V 0 20 40 60 80 100 120 °C 160 TA -0.02 -0.04 -0.06 -0.08 -0.1 -0.12 -0.14 -0.16 -0.18 -0.2 -0.22 -0.24 A -0.28 BSP 92 P ID

3 Safe operating area

ID = f ( VDS ) parameter : D = 0 , TA = 25°C -10 -1 -10 0 -10 1 -10 2 -10 3 V VDS -3 -10 -2 -10 -1 -10 0 -10 1 -10 A BSP 92 P ID R DS(on) = V DS / I D DC 10 ms 1 ms tp = 110.0µs

4 Transient thermal impedance

ZthJA = f (tp) parameter : D = tp/T 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 s tp -2 10 -1 10 0 10 1 10 2 10 K/W BSP 92 P ZthJA single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

5 Typ. output characteristic ID = f (VDS) parameter: Tj =25°C, -VGS 0 1 2 3 4 5 6 7 8 V 10 -VDS 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 A -ID 10V 4.6V 4.2V 3.6V 3.4V 3.2V 2.8V 2.6V 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: VGS; Tj =25°C, -VGS -ID Ω RDSON 2.6V 2.8V 3.2V 10V 4.6V 4.2V 3.6V 3.4V 7 Typ. transfer characteristics ID= f ( VGS ); |VDS|≥ 2 x |ID| x RDS(on)max parameter: Tj = 25 °C 0 1 2 V 4 -VGS 0.2 0.4 0.6 A -ID 8 Typ. forward transconductance gfs = f(ID) parameter: Tj =25°C 0 0.2 0.4 0.6 A 1 -ID 0.2 0.4 0.6 S gfs

9 Drain-source on-state resistance

RDS(on) = f (Tj) parameter : ID = -0.26 A, VGS = -10 V -60 -20 20 60 100 °C 180 Tj Ω BSP 92 P RDS(on) typ 98%

10 Gate threshold voltage

VGS(th) = f (Tj) parameter: VGS = VDS ; ID = -130µA -60 -20 20 60 100 °C 160 Tj 0.4 0.6 0.8 1.2 1.4 1.6 1.8 V 2.2 - VGS(th) typ. 98% 11 Typ. capacitances C = f (VDS) parameter: VGS=0, f=1 MHz, Tj = 25 °C 0 6 12 18 24 V 36 -VDS 0 10 1 10 2 10 3 10 pF C Ciss Coss Crss 12 Forward character. of reverse diode IF = f (VSD) parameter: Tj VSD -2 -10 -1 -10 0 -10 1 -10 A BSP 92 P IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%)

13 Typ. gate charge VGS = f (QGate) parameter: ID = -0.26 A pulsed 0 1 2 3 4 5 nC 6.5 |QG| -10 -12 V -16 BSP 92 P VGS 20% 50% 80%

14 Drain-source breakdown voltage

V(BR)DSS = f (Tj) -60 -20 20 60 100 °C 180 Tj -225 -230 -235 -240 -245 -250 -255 -260 -265 -270 -275 -280 -285 V -300 BSP 92 P V(BR)DSS

Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.