BSP92 SIEMENS | Alldatasheet

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Semiconductor Group 1 18/02/1997 BSP 92 SIPMOS ® Small-Signal Transistor

  • P channel
  • Enhancement mode
  • Logic Level Pin 1 Pin 2 Pin 3 Pin 4 G D S D Type VDS ID R DS(on) Package Marking BSP 92 -240 V -0.2 A 20 Ω SOT-223 BSP 92 Type Ordering Code Tape and Reel Information BSP 92 Q62702-S653 E6327 Maximum Ratings Parameter Symbol Values Unit Drain source voltage VDS -240 V Drain-gate voltage R GS = 20 kΩ VDGR -240 Gate source voltage VGS ± 20 Gate-source peak voltage,aperiodic Vgs ± Continuous drain current TA = 35 °C ID -0.2 A DC drain current, pulsed TA = 25 °C IDpuls -0.8 Power dissipation TA = 25 °C Ptot 1.7 W

Semiconductor Group 2 18/02/1997 BSP 92 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Tj -55 ... + 150°C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air 1) R thJA ≤ 72 K/W Thermal resistance, junction-soldering point 1) R thJS ≤ 12 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = -0.25 mA, Tj = 25 °C V(BR)DSS -240 - - V Gate threshold voltage VGS =VDS, ID = -1 mA VGS(th) -0.8 -1.5 -2 Zero gate voltage drain current VDS = -240 V, VGS = 0 V, Tj = 25 °C VDS = -240 V, VGS = 0 V, Tj = 125 °C VDS = -60 V, VGS = 0 V, Tj = 25 °C IDSS -10 -0.1 -0.2 -100 µA Gate-source leakage current VGS = -20 V, VDS = 0 V IGSS - -10 -100 nA Drain-Source on-state resistance VGS = -10 V, ID = -0.2 A R DS(on) - 12 20 Ω

Semiconductor Group 3 18/02/1997 BSP 92 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Transconductance VDS ≥ 2 * ID * RDS(on)max, ID = -0.2 A gfs 0.06 0.13 - S Input capacitance VGS = 0 V, VDS = -25 V, f = 1 MHz C iss - 95 130 pF Output capacitance VGS = 0 V, VDS = -25 V, f = 1 MHz C oss - 20 30 Reverse transfer capacitance VGS = 0 V, VDS = -25 V, f = 1 MHz C rss - 10 15 Turn-on delay time VDD = -30 V, VGS = -10 V, ID = -0.25 A R GS = 50 Ω td(on) - 8 1 2 ns Rise time VDD = -30 V, VGS = -10 V, ID = -0.25 A R GS = 50 Ω tr - 25 40 Turn-off delay time VDD = -30 V, VGS = -10 V, ID = -0.25 A R GS = 50 Ω td(off) - 25 33 Fall time VDD = -30 V, VGS = -10 V, ID = -0.25 A R GS = 50 Ω tf - 42 55

Semiconductor Group 4 18/02/1997 BSP 92 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Reverse Diode Inverse diode continuous forward current TA = 25 °C IS - - -0.2 A Inverse diode direct current,pulsed TA = 25 °C ISM - - -0.8 Inverse diode forward voltage VGS = 0 V, IF = -0.4 A, Tj = 25 °C VSD - -0.9 -1.2 V

Semiconductor Group 5 18/02/1997 BSP 92 Power dissipation Ptot = ƒ(TA) 0 20 40 60 80 100 120 °C 160 TA 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 W 2.0 Ptot Drain current ID = ƒ(TA) parameter: VGS ≥ -10 V 0 20 40 60 80 100 120 °C 160 TA 0.00 -0.02 -0.04 -0.06 -0.08 -0.10 -0.12 -0.14 -0.16 -0.18 A -0.22 ID Safe operating area ID =f(VDS ) parameter : D = 0, TC =25°C Transient thermal impedance Zth JA = ƒ(tp) parameter: D = tp / T -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 K/W ZthJC 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s tp single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

Semiconductor Group 6 18/02/1997 BSP 92 Typ. output characteristics ID = ƒ(VDS ) parameter: tp = 80 µs VDS 0.00 -0.05 -0.10 -0.15 -0.20 -0.25 -0.30 -0.35 A -0.45 ID VGS [V] a a -2.0 b b -2.5 c c -3.0 d d -3.5 e e -4.0 f f -4.5 g g -5.0 h h -6.0 i i -7.0 j j -8.0 k k -9.0 l P tot = 2W l -10.0 Typ. drain-source on-resistance R DS (on) = ƒ(ID ) parameter: tp = 80 µs, Tj = 25 °C ID Ω R DS (on) VGS [V] = a -2.0 VGS [V] = a a -2.5 b b -3.0 c c -3.5 d d -4.0 e e -4.5 f f -5.0 g g -6.0 h h -7.0 i i -8.0 j j -9.0 k k -10.0 Typ. transfer characteristics ID = f(VGS ) parameter: tp = 80 µs VDS ≥ 2 x ID x R DS(on)max V GS 0.00 -0.05 -0.10 -0.15 -0.20 -0.25 -0.30 A -0.40 ID Typ. forward transconductance gfs = f (ID ) parameter: tp = 80 µs, VDS ≥2 x ID x R DS(on)max ID 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 S 0.20 gfs

7 18/02/1997Semiconductor Group BSP 92 Drain-source on-resistance R DS (on) = ƒ(Tj) parameter: ID = -0.2 A, VGS = -10 V -60 -20 20 60 100 °C 160 Tj Ω R DS (on) typ 98% Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS , ID = -1 mA 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 -3.2 -3.6 -4.0 V -4.6 V GS(th) -60 -20 20 60 100 °C 160 Tj typ 98% Typ. capacitances C = f (VDS ) parameter:VGS =0V, f = 1 MHz 0 -5 -10 -15 -20 -25 -30 V -40 V DS 0 10 1 10 2 10 3 10 pF C C oss C iss C rss Forward characteristics of reverse diode IF = ƒ(VSD ) parameter: Tj, tp = 80 µs -3 -10 -2 -10 -1 -10 0 -10 A IF VSD Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%)

Semiconductor Group 8 18/02/1997 BSP 92 Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) -60 -20 20 60 100 °C 160 Tj -215 -220 -225 -230 -235 -240 -245 -250 -255 -260 -265 -270 -275 V -285 V(BR)DSS Safe operating area ID =f(VDS ) parameter : D = 0.01, TC =25°C