BSP89_09 INFINEON | Alldatasheet
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BSP89Rev. 2.1 SIPMOS/g210/g32Small-Signal-Transistor Product Summary VDS 240 V RDS(on) 6 /g87 ID 0.35 A Feature /g183 N-Channel /g183 Enhancement mode /g183 Logic Level /g183dv/dt rated PG-SOT223 VPS051631 MarkingType Package Tape and Reel Information BSP89 PG-SOT223 L6327: 1000 pcs/reel Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current TA=25°C TA=70°C ID 0.35 0.28 A Pulsed drain current TA=25°C ID puls 1.4 Reverse diode dv/dt IS=0.35A, VDS=192V, di/dt=200A/µs, Tjmax=150°C dv/dt 6 kV/µs Gate source voltage VGS ±20 V ESD class (JESD22-A114-HBM) 1A (>250V, <500V) Power dissipation TA=25°C Ptot 1.8 W Operating and storage temperature Tj , Tstg -55... +150 °C IEC climatic category; DIN IEC 68-1 55/150/56
- Pb-free lead plating; RoHS compliant BSP89 ee lead plating; RoHS compliant x Qualified according to AEC Q101 Packaging Non dry 4.5V rated
BSP89Rev. 2.1 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - soldering point (Pin 4) RthJS - - 25 K/W SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) RthJA 115 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage VGS=0, ID=250µA V(BR)DSS 240 - - V Gate threshold voltage, VGS = VDS ID=108µA VGS(th) 0.8 1.4 1.8 Zero gate voltage drain current VDS=240V, VGS=0, Tj=25°C VDS=240V, VGS=0, Tj=150°C IDSS 0.1 µA Gate-source leakage current VGS=20V, VDS=0 IGSS - - 10 nA Drain-source on-state resistance VGS=4.5V, ID=0.32A RDS(on) - 4.9 7.5 /g87 Drain-source on-state resistance VGS=10V, ID=0.35A RDS(on) - 4.2 6 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 2009-08-18Page 2
BSP89Rev. 2.1 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs VDS/g1792*ID*RDS(on)max, ID=0.28A 0.18 0.36 - S Input capacitance Ciss VGS=0, VDS=25V, f=1MHz - 80 140 pF Output capacitance Coss - 11.2 16.8 Reverse transfer capacitance Crss - 5.2 7.8 Turn-on delay time td(on) VDD=120V, VGS=10V, ID=0.35A, RG=6/g87 - 4 6 ns Rise time tr - 3.5 5.3 Turn-off delay time td(off) - 15.9 23.8 Fall time tf - 18.4 27.6 Gate Charge Characteristics Gate to source charge Qgs VDD=192V, ID=0.35A - 0.2 0.3 nC Gate to drain charge Qgd - 2 3 Gate charge total Qg VDD=192V, ID=0.35A, VGS=0 to 10V - 4.3 6.4 Gate plateau voltage V(plateau) VDD=192V, ID = 0.35 A - 3.1 - V Reverse Diode Inverse diode continuous forward current IS TA=25°C - - 0.35 A Inv. diode direct current, pulsed ISM - - 1.4 Inverse diode forward voltage VSD VGS=0, IF = IS - 0.85 1.2 V Reverse recovery time trr VR=120V, IF=lS, diF/dt=100A/µs - 67 100 ns Reverse recovery charge Qrr - 123 184 nC 2009-08-18Page 3
BSP89Rev. 2.1
1 Power dissipation
Ptot = f (TA) 0 20 40 60 80 100 120 °C 160 TA 0.2 0.4 0.6 0.8 1.2 1.4 1.6 W 1.9 BSP89 Ptot
2 Drain current
I D = f (TA) parameter: VGS/g179 10 V 0 20 40 60 80 100 120 °C 160 TA 0.04 0.08 0.12 0.16 0.2 0.24 0.28 0.32 A 0.38 BSP89 ID
3 Safe operating area
I D = f ( VDS ) parameter : D = 0 , TA = 25 °C 10 0 10 1 10 2 10 3 V VDS -310 -210 -110 010 110 A BSP89 ID RDS(on) =VDS /I D DC 10 ms 1 ms tp = 160.0µs
4 Transient thermal impedance
Z thJA = f (tp) parameter : D = tp/T 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 s tp -210 -110 010 110 210 K/W BSP89 ZthJA single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50 2009-08-18Page 4
BSP89Rev. 2.1 5 Typ. output characteristic ID = f (VDS) parameter: Tj = 25 °C, VGS 0 0.5 1 1.5 2 2.5 3 3.5 4 V 5 VDS 0.1 0.2 0.3 0.4 A 0.6 ID 3.4V 3.6V 4.2V 4.6V 10V 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: Tj = 25 °C, VGS ID /g87 RDS(on) 3.4V 3.6V 4.2V 4.6V 10V 7 Typ. transfer characteristics ID= f ( VGS ); VDS/g179 2 x ID x RDS(on)max parameter: Tj = 25 °C 0 0.5 1 1.5 2 2.5 V 3.5 VGS 0.1 0.2 0.3 0.4 A 0.6 ID 8 Typ. forward transconductance g fs = f(ID) parameter: Tj = 25 °C ID 0.1 0.2 0.3 0.4 S 0.6 gfs 2009-08-18Page 5
BSP89Rev. 2.1
9 Drain-source on-state resistance
RDS(on) = f (Tj) parameter : ID = 0.35 A, VGS = 10 V -60 -20 20 60 100 °C 180 Tj /g87 BSP89 RDS(on) typ 98% 10 Typ. gate threshold voltage V GS(th) = f (Tj) parameter: VGS = VDS; ID =108µA -60 -20 20 60 100 °C 160 Tj 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 V 2.2 VGS(th) typ. 98% 11 Typ. capacitances C = f (V DS) parameter: VGS=0, f=1 MHz, Tj = 25 °C 0 5 10 15 20 V 30 VDS 010 110 210 310 pF C Crss Coss Ciss 12 Forward character. of reverse diode I F = f (VSD) parameter: Tj VSD -210 -110 010 110 A BSP89 IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%) 2009-08-18Page 6
BSP89Rev. 2.1 13 Typ. gate charge VGS = f (QG); parameter: VDS , ID = 0.35 A pulsed, Tj = 25 °C 0 1 2 3 4 5 nC 6.5 QG V BSP89 VGS
0.2 VDS max
0.5 VDS max
0.8 VDS max
14 Drain-source breakdown voltage
V (BR)DSS = f (Tj) -60 -20 20 60 100 °C 180 Tj 216 221 226 231 236 241 246 251 256 261 266 271 276 V 291 BSP89 V(BR)DSS 2009-08-18Page 7
BSP89Rev. 2.1