BSP88 INFINEON | Alldatasheet
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BSP88Rev. 1.0 SIPMOS/g210/g32Small-Signal-Transistor Product Summary VDS 240 V RDS(on) 6 /g87 ID 0.35 A Feature /g183 N-Channel /g183 Enhancement mode /g183 Logic Level /g183 dv/dt rated SOT-223 VPS051631 Marking BSP88 Type Package Ordering Code Tape and Reel Information BSP88 SOT-223 Q67000-S070 E6327: 3000 pcs/reel Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current TA=25°C TA=70°C ID 0.35 0.28 A Pulsed drain current TA=25°C ID puls 1.4 Reverse diode dv/dt IS=0.35A, VDS=192V, di/dt=200A/µs, Tjmax=150°C dv/dt 6 kV/µs Gate source voltage VGS ±20 V ESD Sensitivity (HBM) as per MIL-STD 883 Class 1 Power dissipation TA=25°C Ptot 1.8 W Operating and storage temperature Tj , Tstg -55... +150 °C IEC climatic category; DIN IEC 68-1 55/150/56
BSP88Rev. 1.0 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - soldering point (Pin 4) RthJS - - 25 K/W SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) RthJA 115 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage VGS=0, ID=250µA V(BR)DSS 240 - - V Gate threshold voltage, VGS = VDS ID=108µA VGS(th) 0.6 1 1.4 Zero gate voltage drain current VDS=240V, VGS=0, Tj=25°C VDS=240V, VGS=0, Tj=150°C IDSS 0.1 µA Gate-source leakage current VGS=20V, VDS=0 IGSS - 1 10 nA Drain-source on-state resistance VGS=2.8V, ID=0.014A RDS(on) - 4.9 15 /g87 Drain-source on-state resistance VGS=4.5V, ID=0.32A RDS(on) - 4.6 7.5 Drain-source on-state resistance VGS=10V, ID=0.35A RDS(on) - 4 6 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.
BSP88Rev. 1.0 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs VDS/g1792*ID*RDS(on)max, ID=0.28A 0.19 0.38 - S Input capacitance Ciss VGS=0, VDS=25V, f=1MHz - 76 95 pF Output capacitance Coss - 12 15 Reverse transfer capacitance Crss - 6 9 Turn-on delay time td(on) VDD=120V, VGS=4.5V, ID=0.35A, RG=15/g87 - 3.6 5.4 ns Rise time tr - 3.5 5.2 Turn-off delay time td(off) - 17.9 26.8 Fall time tf - 18.9 28.3 Gate Charge Characteristics Gate to source charge Qgs VDD=192V, ID=0.35A - 0.2 0.3 nC Gate to drain charge Qgd - 2 3 Gate charge total Qg VDD=192V, ID=0.35A, VGS=0 to 10V - 4.5 6.8 Gate plateau voltage V(plateau) VDD=192V, ID = 0.35 A - 2.7 - V Reverse Diode Inverse diode continuous forward current IS TA=25°C - - 0.35 A Inv. diode direct current, pulsed ISM - - 1.4 Inverse diode forward voltage VSD VGS=0, IF = IS - 0.86 1.2 V Reverse recovery time trr VR=120V, IF=lS, diF/dt=100A/µs - 66 82 ns Reverse recovery charge Qrr - 119 149 nC
BSP88Rev. 1.0
1 Power dissipation
Ptot = f (TA) 0 20 40 60 80 100 120 °C 160 TA 0.2 0.4 0.6 0.8 1.2 1.4 1.6 W 1.9 BSP88 Ptot
2 Drain current
I D = f (TA) parameter: VGS/g179 10 V 0 20 40 60 80 100 120 °C 160 TA 0.04 0.08 0.12 0.16 0.2 0.24 0.28 0.32 A 0.38 BSP88 ID
3 Safe operating area
I D = f ( VDS ) parameter : D = 0 , TA = 25 °C 10 0 10 1 10 2 10 3 V VDS -3 10 -2 10 -1 10 0 10 1 10 A BSP88 ID R DS(on) = V DS / I D DC 10 ms 1 ms tp = 160.0µs
4 Transient thermal impedance
Z thJA = f (tp) parameter : D = tp/T 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 s tp -2 10 -1 10 0 10 1 10 2 10 K/W BSP88 ZthJA single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50
BSP88Rev. 1.0 5 Typ. output characteristic ID = f (VDS) parameter: Tj = 25 °C, VGS 0 0.5 1 1.5 2 2.5 3 V 4 VDS 0.08 0.16 0.24 0.32 0.4 0.48 A 0.64 ID 2.6V 3.2V 3.4V 3.8V 4.4V 10V 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: Tj = 25 °C, VGS ID /g87 RDS(on) 2.6V 3.2V3.4V 3.8V 4.4V 10V 7 Typ. transfer characteristics ID= f ( VGS ); VDS/g179 2 x ID x RDS(on)max parameter: Tj = 25 °C 0 0.5 1 1.5 2 2.5 V 3.5 VGS 0.08 0.16 0.24 0.32 0.4 0.48 A 0.64 ID 8 Typ. forward transconductance gfs = f(ID) parameter: Tj = 25 °C ID 0.1 0.2 0.3 0.4 S 0.6 gfs
BSP88Rev. 1.0
9 Drain-source on-state resistance
RDS(on) = f (Tj) parameter : ID = 0.35 A, VGS = 10 V -60 -20 20 60 100 °C 180 Tj /g87 BSP88 RDS(on) typ 98% 10 Typ. gate threshold voltage V GS(th) = f (Tj) parameter: VGS = VDS; ID = 108 µA -60 -20 20 60 100 °C 160 Tj 0.2 0.4 0.6 0.8 1.2 1.4 V 1.8 VGS(th) typ. 98% 11 Typ. capacitances C = f (V DS) parameter: VGS=0, f=1 MHz, Tj = 25 °C 0 5 10 15 20 V 30 VDS 0 10 1 10 2 10 3 10 pF C Crss Coss Ciss 12 Forward character. of reverse diode I F = f (VSD) parameter: Tj VSD -2 10 -1 10 0 10 1 10 A BSP88 IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%)
BSP88Rev. 1.0 13 Typ. gate charge VGS = f (QG); parameter: VDS , ID = 0.35 A pulsed, Tj = 25 °C 0 1 2 3 4 5 nC 7 QG V BSP88 VGS
0.2 VDS max
0.5 VDS max
0.8 VDS max
14 Drain-source breakdown voltage
V (BR)DSS = f (Tj) -60 -20 20 60 100 °C 180 Tj 216 221 226 231 236 241 246 251 256 261 266 271 276 V 291 BSP88 V(BR)DSS
BSP88Rev. 1.0 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.