BSP78 SIEMENS | Alldatasheet

Document overview

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Technical content

Features

  • Logic Level Input
  • Input Protection (ESD)
  • Thermal shutdown with auto restart
  • Overload protection
  • Short circuit protection
  • Overvoltage protection
  • Current limitation
  • Analog driving possible Product Summary Drain source voltage V40VDS On-state resistance RDS(on) 50 m Ω Nominal load current ID(Nom) 3 A Clamping energy mJEAS 500 Application
  • All kinds of resistive, inductive and capacitive loads in switching or linear

applications

  • µC compatible power switch for 12 V and 24 V DC applications
  • Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOS  technology. Fully protected by embedded protection functions. Pin Symbol Function

1 IN Input

2 DRAIN Output to the load

3 SOURCE Ground

TAB DRAIN Output to the load

Semiconductor Group Jan-15-1998Page 2 Preliminary data BSP 78 Block Diagram protection Overvoltage Drain IN ESD HITFET  Source Current Over- protection temperature Short circuit protection limitation Vbb Short circuit protection LOAD Overload protection M Unit Gate-Driving

Semiconductor Group Jan-15-1998Page 3 Preliminary data BSP 78 Maximum Ratings at Tj = 25°C, unless otherwise specified Parameter Value UnitSymbol V40VDSDrain source voltage Drain source voltage for short circuit protection 40VDS(SC) Continuous input voltage VIN -0.2 ... +10 Peak input voltage ( IIN ≤ 2 mA) VIN(peak) -0.2 ... VDS Operating temperature Tj °C-40 ...+150 Storage temperature Tstg -55 ...+150 Power dissipation , TC = 85 °C Ptot W1.7 Unclamped single pulse inductive energy F) EAS 500 mJ Electro static discharge voltage (Human Body Model) according to MIL STD 883D, method 3015.7 and EOS/ESD assn. standard S5.1 - 1993 2000VESD kV EDIN humidity category, DIN 40 040 IEC climatic category; DIN IEC 68-1 40/150/56 Thermal resistance K/WRthJAjunction - ambient: @ min. footprint @ 6 cm 2 cooling area F) 125 junction-soldering point: RthJS 17 K/W 1 not tested, specified by design 2 Device on 50mm+50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for Drain connection. PCB is vertical without blown air.

Semiconductor Group Jan-15-1998Page 4 Preliminary data BSP 78

Electrical Characteristics

Parameter Symbol UnitValues at Tj = 25°C, unless otherwise specified min. max.typ. Characteristics Drain source clamp voltage Tj = - 40 ...+ 150 , Imess = 10 mA -VDS(AZ) 40 55 V IDSS - -Off-state drain current Tj = -40 ... +150°C VIN = 0 V, VDS = 32 V 10 µA Input treshold voltage ID = 0.7 mA 1.71.3 V2.2VIN(th) IIN(on)On state input current 30 µA10- RDS(on)On-state resistance ID = 3 A, VIN = 5 V, Tj = 25 °C ID = 3 A, VIN = 5 V, Tj = 150 °C m Ω 120 RDS(on)On-state resistance ID = 3 A, VIN = 10 V, Tj = 25 °C ID = 3 A, VIN = 10 V, Tj = 150 °C 100 ID(Nom)Nominal load current VDS = 0.5 V, TS = 85 °C, Tj < 150°C, VIN = 10 V - - A3 AID(lim)Current limit (active if VDS>2.5 V) VIN = 10 V, VDS = 12 V 16 24 32 Dynamic Characteristics Turn-on time VIN to 90% ID : RL = 5 Ω , VIN = 0 to 10 V, Vbb = 12 V ton - 60 150 µs Turn-off time VIN to 10% ID : RL = 5 Ω , VIN = 10 to 0 V, Vbb = 12 V toff - 60 150 Slew rate on 70 to 50% Vbb : RL = 5 Ω , VIN = 0 to 10 V, Vbb = 12 V -dVDS/dton - 0.4 1 V/µs Slew rate off 50 to 70% Vbb : RL = 5 Ω , VIN = 10 to 0 V, Vbb = 12 V dVDS/dtoff - 0.7 1

Semiconductor Group Jan-15-1998Page 5 Preliminary data BSP 78 Parameter Symbol UnitValues at Tj = 25°C, unless otherwise specified typ.min. max. Protection Functions °C150TjtThermal overload trip temperature 165 - Thermal hysteresis ΔTjt - 10 K- 300Input current protection mode - -IIN(Prot) µA Unclamped single pulse inductive energy F) ID = 3 A, Tj = 25 °C, Vbb = 12 V ID = 3 A, Tj = 150 °C, Vbb = 12 V EAS 500 300 mJ Inverse Diode Continuous source drain voltage VIN = 0 V , - ID = 5* 3 A, tP = 300 µs - 1.1 - VVSD 1 not tested, specified by design

Semiconductor Group Jan-15-1998Page 6 Preliminary data BSP 78 Block diagram Inductive and overvoltage output clamp Terms Short circuit behaviourInput circuit (ESD protection) IN t V t I IN t I D t T j Thermal hysteresis Gate Drive Source/ Ground Input Input is not designed for DC current > 2 mA

Semiconductor Group Jan-15-1998Page 7 Preliminary data BSP 78 Maximum allowable power dissipation Ptot = f(TC) -50 -25 0 25 50 75 100 °C 150 TC 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 W 1.7 Ptot On-state resistance RON = f(Tj); I D = 3 A; V IN =10V -40 -15 10 35 60 85 110 135 °C 185 Tj 100 m Ω 120 RDS(on) typ. max. On-state resistance RON = f(Tj); I D = 3 A; V IN =5V -40 -15 10 35 60 85 110 135 °C 185 Tj 100 110 120 m Ω 140 RDS(on) typ. max. Typ. input threshold voltage VIN(th) = f(Tj); I D = - ; V DS =12V -50 -25 0 25 50 75 100 °C 150 Tj 0.0 0.2 0.5 0.8 1.0 1.2 1.5 V 2.0 VIN(th)

Semiconductor Group Jan-15-1998Page 8 Preliminary data BSP 78 Typ. short circuit current ID(SC) = f(Tj); V DS =12V Parameter: V IN -40 -15 10 35 60 85 110 135 °C 185 Tj A ID Vin=10V Typ. transfer characteristics ID = f(VIN); V DS =12V; T j=25°C 0 1 2 3 4 5 6 7 8 V 10 VIN A ID Typ. output characteristic ID = f(VDS); T j=25°C Parameter: V IN 0 1 2 3 4 V 6 VDS A ID Vin=3V 10V Typ. overload current ID(lim) = f(t), Vbb =12 V, no heatsink Parameter: Tjstart t A ID(lim) -40°C 25°C 85°C 150°C

Semiconductor Group Jan-15-1998Page 9 Preliminary data BSP 78 Transient thermal impendance ZthJC = f(tP) Parameter: D=t P /T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 3 s tP -3 10 -2 10 -1 10 0 10 1 10 2 10 K/W ZthJA 0.01 0.02 0.05 0.1 0.2 D=0.5 Typ. off-state drain current IDSS = f(Tj) -40 -15 10 35 60 85 110 135 °C 185 Tj µA IDSS typ.typ. max.

Semiconductor Group Jan-15-1998Page 10 Preliminary data BSP 78 Package and ordering code all dimensions in mm Ordering code: Q67060-S7203-A2