BSP75N ZETEX | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 8
Technical content
Features
- Short circuit protection with auto restart Over-voltage protection (active clamp) Thermal shutdown with auto restart Over-current protection Input protection (ESD) High continuous current rating Load dump protection (actively protects load) Logic level input Note: The tab is connected to the source pin and must be electrically isolated from the drain pin. Connection of significant copper to the drain pin is recommended for best thermal performance. Device Reel size (inches) Tape width (mm) Quantity per reel BSP75NTA 7 12mm embossed 1000 SOT223 S S D IN
Issue 4 - September 2006 2 www.zetex.com © Zetex Semiconductors plc 2006 Functional block diagram
Applications
Especially suited for loads with a high in-rush current such as lamps and motors. All types of resistive, inductive and capacitive loads in switching applications. /H9262C compatible power switch for 12V and 24V DC applications. Automotive rated. Replaces electromechanical re lays and discrete circuits. Linear mode capability - the current-limiting protection circuitry is designed to de-activate at low Vds, in order not to compromise the load current during normal operation. The design maximum DC operating current is therefore determined by the thermal capability of the package/board combination, rather than by the protection ci rcuitry. This does not compromise the products ability to self protect itself at low V DS. S Over voltage protection Over current protection Over temperature protection Logic Human body ESD protection D IN dV/dt limitation
Issue 4 - September 2006 3 www.zetex.com © Zetex Semiconductors plc 2006 Absolute maximum ratings NOTES: (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 board with a high coverage of single sided 2oz weight copper. Allocation of 6cm2 copper 33% to source tab and 66% to drain pin with tab and drain pin electrically isolated. (b) For a device surface mounted on FR4 board as (a) and measured at t<=10s. (c) For a device surface mounted on FR4 board with the minimum copper required for connections. Parameter Symbol Limit Unit Continuous drain-source voltage V DS 60 V Drain-source voltage for short circuit protection VIN = 5V V DS(SC) 36 V Drain-source voltage for short circuit protection VIN = 10V V DS(SC) 20 V Continuous input voltage V IN -0.2 ... +10 V Peak input voltage V IN -0.2 ... +20 V Operating temperature range T j, -40 to +150 °C Storage temperature range T stg -55 to +150 °C Power dissipation at TA =25°C (a) PD 1.5 W Power dissipation at TA =25°C (c) PD 0.6 W Continuous drain current @ VIN=10V; TA=25°C (a) ID 1.3 A Continuous drain current @ VIN=5V; TA=25°C (a) ID 1.1 A Continuous drain current @ VIN=5V; TA=25°C (c) ID 0.7 A Continuous source current (body diode) (a) IS 2.0 A Pulsed source current (body diode) (b) IS 3.3 A Unclamped single pulse inductive energy E AS 550 mJ Load dump protection V LoadDump 80 V Electrostatic discharge (human body model) V ESD 4000 V DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 40/150/56 Thermal resistance Parameter Symbol Limit Unit Junction to ambient (a) R/H9052JA 83 °C/W Junction to ambient (b) R/H9052JA 45 °C/W Junction to ambient (c) R/H9052JA 208 °C/W
Issue 4 - September 2006 4 www.zetex.com © Zetex Semiconductors plc 2006 Electrical characteristics (at TAMB = 25°C unless otherwise stated) Parameter Symbol Min. Typ. Max. Unit Conditions Static characteristics Drain-source clamp voltage V DS(AZ) 60 70 75 V I D=10mA Off-state drain current I DSS 0.1 3 /H9262AV DS=12V, VIN=0V Off-state drain current I DSS 31 5 /H9262AV DS=32V, VIN=0V Input threshold voltage (*) NOTES: (*) The drain current is limited to a reduced value when VDS exceeds a safe level. VIN(th) 12 . 1 V V DS=VGS, ID=1mA Input current I IN 0.7 1.2 mA V IN=+5V Input current I IN 1.5 2.7 mA V IN=+7V Input current I IN 47 m A V IN=+10V Static drain-source on-state resistance RDS(on) 520 675 m /H9024VIN=+5V, ID=0.7A Static drain-source on-state resistance RDS(on) 385 550 m /H9024VIN=+10V, ID=0.7A Current limit (†) (†) Protection features may operate outside spec for VIN<4.5V. ID(LIM) 0.7 1.0 1.5 A V IN=+5V, VDS>5V Current limit(†) ID(LIM) 1.0 1.8 2.3 A V IN=+10V, VDS>5V Dynamic characteristics Turn-on time (VIN to 90% ID)t on 3.0 10 /H9262sR L=22/H9024, VDD=12V, VIN=0 to +10V Turn-off time (VIN to 90% ID)t off 13 20 /H9262sR L=22/H9024, VDD=12V, VIN=+10V to 0V Slew rate on (70 to 50% VDD)- d V DS/dton 82 0 V / /H9262sR L=22/H9024, VDD=12V, VIN=0 to +10V Slew rate off (50 to 70% VDD)D V DS/dtoff 3.2 10 V/ /H9262sR L=22/H9024, VDD=12V, VIN=+10V to 0V Protection functions (‡) (‡) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the datasheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous, repetitive operation. Required input voltage for over temperature protection VPROT 4.5 V Thermal overload trip temperature TJT 150 175 °C Thermal hysteresis 1 °C Unclamped single pulse inductive energy Tj=25°C EAS 550 mJ I D(ISO)=0.7A, VDD=32V Unclamped single pulse inductive energy Tj=150°C 200 mJ I D(ISO)=0.7A, VDD=32V Inverse diode Source drain voltage V SD 1V V IN=0V, -ID=1.4A
Issue 4 - September 2006 5 www.zetex.com © Zetex Semiconductors plc 2006
Application information
The current-limit protection circuitry is designed to de-activate at low V DS to prevent the load current from being unnecessarily restricted during normal operation. The design max DC operating current is therefore determined by the thermal capability of the package/board combination, rather than by the protection circuitry (see graph on page 7 'Typical Output Characteristic'). This does not compromise the products ability to self protect at low V DS. The overtemperature protection circuit trips at a minimum of 150°C. So the available package dissipation reduces as the maximum required ambi ent temperature increases. This leads to the following maximum recommended continuous operating currents. Minimum copper area characteristics For minimum copper condition as described in note (c) Max. ambient temperature Tamb Maximum continuous current VIN = 5V V IN = 10V 25°C @ VIN = 5V 720 840 70°C @ VIN = 5V 575 670 85°C @ VIN = 5V 520 605 125°C @ VIN = 5V 320 375
Issue 4 - September 2006 6 www.zetex.com © Zetex Semiconductors plc 2006 Large copper area characteristics For large copper area as described in note (a) Max. ambient temperature Tamb Maximum continuous current VIN = 5V V IN = 10V 25°C @ VIN = 5V 1140 1325 70°C @ VIN = 5V 915 1060 85°C @ VIN = 5V 825 955 125°C @ VIN = 5V 510 590
Issue 4 - September 2006 7 www.zetex.com © Zetex Semiconductors plc 2006 Typical characteristics
Issue 4 - September 2006 8 www.zetex.com © Zetex Semiconductors plc 2006 For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only whic h (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. Europe Zetex GmbH Kustermann-park Balanstraße 59 D-81541 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc
700 Veterans Memorial Highway
Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Dim. Millimeters Inches Di m. Millimeters Inches A - 1.80 - 0.071 e 2.30 BSC 0.0905 BSC