BSP75N

BSP75N_08 INFINEON | Alldatasheet

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Technical content

Features

• Logic Level Input  Input protection (ESD)  Thermal shutdown with auto restart  Overload protection  Short circuit protection  Overvoltage protection  Current limitation  Green Product (RoHS compliant)  AEC Stress Test Qualification Application  All kinds of resistive, inductive and ca pacitive loads in switching applications  µC compatible power switch for 12 V and 24 V DC applications and for 42 Volt Powernet  Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart Power Technology. Fully protected by embedded protection functions. Type Ordering Code Package HITFET BSP 75N on request PG-SOT223-4 Product Summary Parameter Symbol Value Unit Continuous drain source voltage VDS 60 V On-state resistance RDS(ON) 550 mΩ Current limitation ID(lim) 1 A Nominal load current ID(Nom) 0.7 A Clamping energy EAS 550 mJ

M HITFET BSP 75N Data Sheet Rev. 1.4 2 2008-07-10 Figure 1 Block Diagram TAB IN DRAIN SOURCE SOURCE Figure 2 Pin Configuration Pin Definitions and Functions Pin No. Symbol Function

1 IN Input; activates output and supplies internal logic

2 DRAIN Output to the load

3 + TAB SOURCE Ground; pin3 and TAB are internally connected

Data Sheet Rev. 1.4 3 2008-07-10 HITFET BSP 75N Circuit Description The BSP 75N is a monolithic power switch in Smart Power Technology (SPT) with a logic level input, an open drain DMOS output stage and integrated protection functions. It is designed for all kind of resistive and inductive loads (relays, solenoid) in automotive and industrial applications. Protection Functions  Over voltage protection: An internal clamp limits the output voltage at VDS(AZ) (min. 60V) when inductive loads are switched off.  Current limitation: By means of an internal current measurement the drain current is limited at ID(lim) (1.4 - 1.5 A typ.). If the current limitation is active the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. This operation leads to an increasing junction temperature until the over temperature threshold is reached.  Over temperature and short circuit protection: This protection is based on sensing the chip temperature. The location of the sensor ensures a fast and accurate junction temperature detection. Ov er temperature shutdown occurs at minimum 150 °C. A hysteresis of typ. 10 K enables an automatic restart by cooling. The device is ESD protected according Human Body Model (4 kV) and load dump protected (see Maximum Ratings).

Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit Remarks Continuous drain source voltage 1) See also Figure 7 and Figure 10. 1) VDS 60 V – Drain source voltage for short circuit protection VDS 36 V – Continuous input voltage VIN -0.2 … +10 V – Peak input voltage VIN -0.2 … +20 V – Continuous Input Current -0.2V ≤ VIN ≤ 10V VIN<-0.2V or VIN>10V IIN no limit | IIN |≤ 2mA mA – Operating temperature range Storage temperature range Tj Tstg -40 … +150 -55 … +150 Power dissipation (DC) Ptot 1.8 W – Unclamped single pulse inductive energy EAS 550 mJ ID(ISO) = 0.7 A; Vbb =32V Load dump protection 2) VLoadDump is setup without DUT connected to the generator per ISO 7637-1 and DIN 40 839. See also page 7. IN = low or high (8 V); RL = 50 Ω IN = high (8 V); RL = 22 Ω VLoadDump V VLoadDump = VP + VS; VP = 13.5 V R 3) RI = internal resistance of the load dump test pulse generator LD200. I 3) = 2 Ω; td = 400 ms; Electrostatic discharge voltage (Human Body Model) according to MIL STD 883D, method 3015.7 and EOS/ESD assn. standard S5.1 - 1993 VESD 4000 V – Thermal Resistance Junction soldering point RthJS ≤ 10 K/W – Junction - ambient 4) Device on epoxy pcb 40 mm × 40 mm × 1.5 mm with 6 cm2 copper area for pin 4 connection. 4) RthJA ≤ 70 K/W – HITFET BSP 75N Data Sheet Rev. 1.4 4 2008-07-10

Data Sheet Rev. 1.4 5 2008-07-10 HITFET BSP 75N

Electrical Characteristics

Tj = 25 °C, unless otherwise specified Parameter Sym- bol Limit Values Unit Test Conditions min. typ. max. Static Characteristics Drain source clamp voltage VDS(AZ) 60 – 75 V ID = 10 mA, Tj = -40 … +150 °C Off state drain current IDSS – – 5 µA VIN = 0 V, VDS = 32 V, Tj = -40 … +150 °C Input threshold voltage VIN(th) 1 1.8 2.5 V ID = 10 mA Input current: normal operation, ID < ID(lim): current limitation mode, ID = ID(lim): After thermal shutdown, ID = 0 A: IIN(1) IIN(2) IIN(3) 1000 100 250 1500 200 400 2000 µA VIN = 5 V On-state resistance Tj = 25 °C Tj = 150 °C RDS(on) 490 850 675 1350 mΩ ID = 0.7 A, VIN = 5 V On-state resistance Tj = 25 °C Tj = 150 °C RDS(on) 430 750 550 1000 mΩ ID = 0.7 A, VIN = 10 V Nominal load current ID(Nom) 0.7 – – A VBB = 12 V, VDS = 0.5 V, TS = 85 °C, Tj < 150 °C Current limit ID(lim) 1 1.5 1.9 A VIN = 10 V, VDS = 12 V Dynamic Characteristics 1) Turn-on time VIN to 90% ID: ton – 10 20 µs RL = 22 Ω, VIN = 0 to 10 V, VBB = 12 V Turn-off time VIN to 10% ID: toff – 10 20 µs RL = 22 Ω, VIN = 10 to 0 V, VBB = 12 V

HITFET BSP 75N Data Sheet Rev. 1.4 6 2008-07-10 Slew rate on 70 to 50% VBB: -dVDS/ dton – 5 10 V/ µs RL = 22 Ω, VIN = 0 to 10 V, VBB = 12 V Slew rate off 50 to 70% VBB: dVDS/ dtoff – 10 15 V/ µs RL = 22 Ω, VIN = 10 to 0 V, VBB = 12 V Protection Functions2) Thermal overload trip temperature Tjt 150 165 180 °C – Thermal hysteresis ∆Tjt – 10 – Κ – Unclamped single pulse inductive energy Tj = 25 °C Tj = 150 °C EAS 550 200 mJ ID(ISO) = 0.7 A, VBB = 32 V Inverse Diode Continuous source drain voltage VSD – 1 – V VIN = 0 V, -ID = 2 × 0.7 A 1) See also Figure 9. 2) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the datasheet. Fault conditions are cons idered as “outside” normal operating range. Protection functions are not designed for continuous, repetitive operation. Electrical Characteristics (cont’d) Tj = 25 °C, unless otherwise specified Parameter Sym- bol Limit Values Unit Test Conditions min. typ. max.

Data Sheet Rev. 1.4 7 2008-07-10 HITFET BSP 75N EMC-Characteristics The following EMC-Characteristics outline the behavior of typical devices. They are not part of any production test. Table 1T e s t C o n d i t i o n s Parameter Symbol Value Unit Remark Temperature TA 23 ±5 °C – Supply Voltage VS 13.5 V – Load RL 27 Ω ohmic Operation mode PWM DC fINx=100Hz, D=0.5 ON / OFF DUT specific VIN(’HIGH’)=5V Fast electrical transients acc. to ISO 7637 1) The test pulses are applied at VS Test1) Pulse 1 -200V C C 500ms ; 10Ω 2 +200V C C 500ms ; 10Ω 3a -200V C C 100ms ; 50Ω 3b +200V C C 100ms ; 50Ω 4 -7V C C 0.01Ω 5 175V E(65V) E(75V) 400ms ; 2Ω Definition of functional status Class Content C All functions of the device are performed as designed after exposure to disturbance. E One or more function of a device does not perform as designed after exposure and can not be returned to proper operation without repairing or replacing the device. The value after the character shows the limit. Max. Test Level Test Result Pulse Cycle Time and Generator Impedance OUTx stressed ON OFF

HITFET BSP 75N Data Sheet Rev. 1.4 8 2008-07-10 Figure 3 Test circuit for ISO pulse Conducted Emissions Acc. IEC 61967-4 (1Ω/150Ω method) Typ. Vbb Emissions at PWM-mode with 150Ω-matching network -20 -10 100 0,1 1 10 100 1000 f / MHz dBµV Noise level BSP75N 150ohm Class6 150ohm Class1 150Ω / 8-H 150Ω / 13-N 150Ω-Network BSP75N SOURCE DRAININ VBB RL Figure 4 Test circuit for conducted emission 1) Conducted Susceptibility Acc. 47A/658/CD IEC 62132-4 (Direct Power Injection) Direct Power Injection: Forward Power CW Failure Criteria: Amplitude or frequency variation max. 10% at OUT Typ. Vbb Susceptibility at DC-ON/OFF and at PWM 1 10 100 1000 f / MHz dBm Limit OUT, ON OUT, OFF OUT, PWM HF BSP75N SOURCE DRAININ VBB RL B A N Test circuit for conducted susceptibility 1) For defined de coupling and high reproducibility a defined choke (5 µH at 1MHz) is inserted in the Vbb-Line. 2) Broadband Artificial Netw ork (short: BAN) consists of the same choke (5 µH at 1MHz) and the same

150 Ohm-matching network as for emission

measurement for defined de coupling and high reproducibility.

HITFET BSP 75N Data Sheet Rev. 1.4 11 2008-07-10 1 Max. allowable power dissipation Ptot = f(TAmb) 0,4 0,8 1,2 1,6 0 25 50 75 100 125 150 P tot W T Amb max.

3 On-state resistance RON = f(Tj);

ID = 0.7 A; VIN = 5 V 200 400 600 800 1000 1200 1400 -50 -25 0 25 50 75 100 125 150 R ON m Ω T j max. typ.

2 On-state resistance RON = f(Tj);

ID = 0.7 A; VIN = 10 V 100 200 300 400 500 600 700 800 900 1000 -50 -25 0 25 50 75 100 125 150 R ON m Ω T j max. typ. 4 Typ. input threshold voltage VIN(th) = f(Tj); ID = 10 mA; VDS = 12 V 0,5 1,5 2,5 -50 -25 0 25 50 75 100 125 150 V IN(th) V T j typ.

HITFET BSP 75N Data Sheet Rev. 1.4 12 2008-07-10 5 Typ. on-state resistance RON = f(VIN); ID = 0.7 A; Tj = 25 °C 500 1000 1500 2000 02468 1 0 V IN V typ. R ON m Ω 7 Typ. short circuit current ID(SC) = f(VIN); VDS = 12 V, Tj = 25 °C 0,5 1,5 02468 1 0 I D(SC) A V IN V typ. 6 Typ. current limitation ID(lim) = f(Tj); VDS = 12 V, VIN = 10 V 0,5 1,5 -50 -25 0 25 50 75 100 125 150 I D(lim) A T j typ. 8 Max. transient thermal impedance ZthJA = f(tp) @ 6cm²; Parameter: D = tp/T 0,1 100 0,00001 0,001 0,1 10 1000 10000 0 0.01 0.02 0.05 0.1 0.2 0.5 Z th(JA) K/W t P s

Data Sheet 13 Rev. 1.4, 2008-07-10 HITFET BSP 75N Package Outlines HITFET‚ BSP 75N

1 Package Outlines HITFET  BSP 75N

±0.1 ±0.04 0.5 MIN. 0.28 0.1 MAX. 15˚ MAX. 6.5±0.2 A 4.6 2.30.7±0.1

0.25 M A

1.6±0.1 7±0.3 B0.25 M ±0.23.5 B 0...10˚ Figure 12 PG-SOT223-4 (Plastic Green Small Outline Transistor Package) Green Product (RoHS compliant) To meet the world-wide customer requireme nts for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). Please specify the package needed (e.g. green package) when placing an order You can find all of our packages, sorts of packing and others in our Infineon Internet Page: http://www.infineon.com/packages. Dimensions in mm

HITFET BSP 75N

Revision History

Data Sheet 14 Rev. 1.3, 2008-04-14

2 Revision History

Rev. 1.4 2008-07-10 fixed a formatting error in Disclaimer page Rev. 1.3 2008-04-14 package naming updated to PG-SOT223-4 Rev. 1.2 2007-04-12 released automotive green version changed package naming from -11 to PG-SOT223-4-7 Rev. 1.1 2007-03-28 Package parameter (humidity and climatic) removed in Maximum ratings AEC icon added RoHS icon added Green product (RoHS-compliant) added to the feature list Package information updated to green Green explanation added Rev. 1.0 2003-01-10 released production version

Published by Infineon Technologies AG,

81726 Munich, Germany

© Infineon Technologies AG 2008. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com) Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. HITFET BSP 75N Data Sheet 15 2008-07-10