BSP75A SIEMENS | Alldatasheet

Document overview

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Technical content

Features

  • Logic Level Input
  • Input protection (ESD)
  • Thermal shutdown (with restart)
  • Overload protection
  • Short circuit protection
  • Overvoltage protection
  • Current limitation Application
  • All kinds of resistive, inductive and capacitive loads in switching applications
  • mC compatible power switch for 12 V and 24 V DC applications
  • Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart Power Technology. Fully protected by embedded protection functions. protection Overvoltage Drain IN ESD HITFETâ Source Over- protection temperature Short circuit protection limitation V bb Short circuit protection LOAD dv/dt limitation M Current Pin Symbol Function

1 IN Input

2 DRAIN Output to the load

3 SOURCE Ground

TAB SUBSTRATE Internally connected to source (pin 3) Product Summary Continuous drain source voltage VDS 55 V On-state resistance R DS (ON ) 550 m W Current limitation ID (lim) 1A Load current (ISO) ID (ISO) 0.7 A Clamping energy EAS 550 mJ

Preliminary data sheet HITFET® BSP 75A Semiconductor Group Page 2 1998-02-04 Maximum Ratings at Tj=25°C unless otherwise specified Parameter Symbol Values Unit Continuous drain source voltage (overvoltage protection see page 4) VDS 55 V Drain source voltage for short circuit protection VDS 32 V Load dump protectionVLoadDump =U P+U S; U P=13.5 V R I 1)=2 W ; td=400ms; IN=low or high (8V) R L=50 W R I=2 W ; td=400ms; IN=high (8V) R L=22 W VLoadDump V Continuous input voltage VIN -0.2 ... +10 V Peak input voltage VIN -0.2 ... +20 V Operating temperature range Storage temperature range Tj Tstg -40 ...+150 -55 ...+150 Power dissipation (DC) Ptot 1.8 W Unclamped single pulse inductive energy ID (ISO) = 0.7 A EAS 550 mJ Electrostatic discharge voltage (Human Body Model) according to MIL STD 883D, method 3015.7 and EOS/ESD assn. standard S5.1 - 1993 VESD 4000 V DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 40/150/56 Thermal resistance junction soldering point: junction - ambient3): R thJS R thJA £10 £70 K/W 1) R I=internal resistance of the load dump test pulse generator LD200 2) VLoadDump is setup without DUT connected to the generator per ISO 7637-1 and DIN 40 839. 3) Device on epoxy pcb 40mm x 40 mm x 1.5mm with 6cm2 copper area for pin 4 connection

Preliminary data sheet HITFET® BSP 75A Semiconductor Group Page 3 1998-02-04

Electrical Characteristics

Parameter and Conditions Symbol Values Unit at Tj = 25 °C, unless otherwise specified min typ max Static Characteristics Drain source clamp voltage ID = 10 mA Tj =-40...+150°C: VDS(AZ) 55 -- 70 V Off state drain current VIN = 0 V, VDS = 32 V Tj =-40...+150°C: IDSS -- -- 5 mA Input threshold voltage ID = 10 mA VIN(th) 2 2.5 3 V Input current normal operation, ID< ID(lim): VIN = 5 V current limitation mode, ID =ID(lim): after thermal shutdown, ID =0 A: IIN(1) IIN(2) IIN(3) 1000 100 200 1500 200 300 2000 mA On-state resistance ID = 0.7 A, VIN = 5 V Tj=25°C: Tj=150°C: R DS(on) -- 550 850 675 1350 m W On-state resistance ID = 0.7 A, VIN = 10 V Tj=25°C: Tj=150°C: R DS(on) -- 475 750 550 1000 m W Nominal load current(ISO 10483) VIN = 10 V, VDS = 0.5 V, TS = 85°C ID(ISO) 0.7 -- -- A Current limit VIN = 10 V, VDS = 12 V ID(lim) 1 1.5 1.9 A Dynamic characteristics Turn-on time VIN to 90% ID : R L = 22 W , VIN= 0 to 10 V, Vbb= 12 V ton -- 10 20 ms Turn-off time VIN to 10% I D: R L = 22 W , VIN= 10 to 0 V, Vbb= 12 V toff -- 10 20 ms Slew rate on 70 to 50% V bb: R L = 22 W , VIN = 0 to 10 V, Vbb = 12 V -dVDS /dt on -- 4 10 V/ ms Slew rate off 50 to 70% V bb: R L = 22 W , VIN= 10 to 0 V, Vbb= 12 V dVDS /dt off -- 4 10 V/ ms

Preliminary data sheet HITFET® BSP 75A Semiconductor Group Page 4 1998-02-04 Parameter and Conditions Symbol Values Unit at Tj = 25 °C, unless otherwise specified min typ max Protection Functions Thermal overload trip temperature Tjt 150 165 -- °C Thermal hysteresis DTjt -- 10 -- K Unclamped single pulse inductive energy ID (ISO)=0.7 A, Vbb=32 V T j=25 °C Tj=150 °C EAS 550 200 mJ Inverse Diode Continuous source drain voltage VIN = 0 V, -ID = 2*0.7 A VSD -- 1 -- V Circuit Description The BSP 75 is a monolithic power switch in Smart Power Technology (SPT) with a logic level input, an open drain DMOS output stage and integrated protection functions. It is designed for all kind of resistive and inductive loads (relays, solenoid) in automotive and industrial ap- plications. Protection functions

  • Overvoltage protection: An internal clamp limits the output voltage at V DS(AZ) (about 63 V) when inductive loads are switched off.
  • Current limitation: By means of an internal current measurement the drain current is lim- ited at ID(lim) (1.4 - 1.5 A typ.). If the current limitation is active the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. This opera- tion leads to an increasing junction temperature until the overtemperature threshold is reached.
  • Overtemperature and short circuit protection: This protection is based on sensing the chip temperature. The location of the sensor ensures a fast and accurate junction tem- perature detection. Overtemperature shutdown occurs at minimum 150 °C. A hysteresis of typ. 10 K enables an automatical restart by cooling. The device is ESD protected according Human Body Model (4 kV) and load dump protected (see Maximum Ratings).

Preliminary data sheet HITFET® BSP 75A Semiconductor Group Page 5 1998-02-04 Block diagram Terms HITFET IN D VIN ID VDS1 IIN S Vbb RL Input circuit (ESD protection) IN ESD-ZD I Source ESD zener diodes are not designed for DC current. Inductive and overvoltage output clamp HITFET V Z D S VIN t VDS VBB VDS(AZ) Turn on into overload or short circuit VIN t ID ID(lim) Shut down by overtemperature and restart by cooling. Current internally limited at ID(lim).

Preliminary data sheet HITFET® BSP 75A Semiconductor Group Page 6 1998-02-04 Maximum allowable power dissipation Ptot = f (TC ) Ptot [W] 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 TC [°C] On-state resistance R ON = f (Tj); ID = 0.7 A; VIN= 5 V R ON [mW ] 200 400 600 800 1000 1200 1400 -50 -25 0 25 50 75 100 125 150 max . typ . Tj [°C] On-state resistance R ON = f (Tj); ID = 0.7 A; VIN= 10 V R ON [mW ] 100 200 300 400 500 600 700 800 900 1000 -50 -25 0 25 50 75 100 125 150 max . typ. Tj [°C] Typ. input threshold voltage VIN(th) = f (Tj); ID = 10 mA; VDS = 12 V VIN(th) [V] 0.5 1.5 2.5 -50 -25 0 25 50 75 100 125 150 Tj [°C]

Preliminary data sheet HITFET® BSP 75A Semiconductor Group Page 7 1998-02-04 Typ. on-state resistance R ON = f (VIN) ID = 0.7 A; Tj= 25°C R ON [mW ] 500 1000 1500 2000 02468 1 0 VIN [V] Typ. short circuit current ID(SC) = f (VIN); VDS =12V, Tj= 25°C ID(SC) [A] 0.2 0.4 0.6 0.8 1.2 1.4 1.6 02468 1 0 VIN [V] Typ. current limitation ID(lim) = f (Tj); VDS =12V, VIN= 10V ID(lim) [A] 1.1 1.2 1.3 1.4 1.5 -50 -25 0 25 50 75 100 125 150 Tj [°C] Transient thermal impendance ZthJC = f (tp) Parameter: D=tp/T ZthJC [K/W] 1E-2 1E-1 1E +0 1E +1 1E +2 1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3 1E+4 0.005 0.01 0.02 0.5 0.2 0.1 0.05 T tp t P tot tp [s]

Preliminary data sheet HITFET® BSP 75A Semiconductor Group Page 8 1998-02-04 Application examples: Status signal of thermal shutdown by monitoring input current D S IN µC Vbb HITFETVIN R St VIN thermal shutdown D V µC

Preliminary data sheet HITFET® BSP 75A Semiconductor Group Page 9 1998-02-04 Package and ordering code all dimensions in mm SOT223/4 Ordering code BSP75 Q67060-S7200-A2 Definition of soldering point with temperature Ts: upper side of solder edge of device pin 4. Pin 4