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Technical content

Features

  • P-channel
  • Enhancement mode
  • Logic level (4.5V rated)
  • Avalanche rated
  • Qualified according to AEC Q101
  • 100% lead-free; RoHS compliant
  • Halogen-free according to AEC61249-2-21 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T A=25 °C -3.0 A T A=70 °C -2.44 Pulsed drain current I D,pulse T A=25 °C -12 Avalanche energy, single pulse E AS I D =-3 A, V DD =-25V, R GS = 25 Ω 150 mJ Reverse diode dv /dt dv /dt I D=-3 A, V DS=-48 V, di /dt =200 A/µs, T j,max=150 °C 6 kV/µs Gate source voltage V GS ±20 V Power dissipation1) P tot T A=25 °C W Operating and storage temperature T j, T stg -55 ... 150 °C ESD Class JESD22-A114 -HBM 1C V Soldering Temperature 260 °C °C IEC climatic category; DIN IEC 68-1 55/150/56 °C Value 1.8 Type Package Tape and Reel Information Marking Halogen Free Packing BSS612P SOT223 H6327: 1000 pcs/ reel BSP612P Yes Non dry PG-SOT-223 VDS -60 V RDS(on),max VGS=10 V 120 mW VGS=4.5 V 170 ID -3 A Product Summary Rev 2.0 page 1 2015-10-07

OptiMOS™-P Small-Signal-TransistorSymbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - soldering point (Pin 4) R thJS 25 Thermal resistance, junction - ambient R thJA minimal footprint 100 Thermal resistance, junction - ambient R thJA 6 cm2 cooling area1) - - 70 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=-250 µA - - -60 V Gate threshold voltage V GS(th) V DS=0 V, I D=-1 mA -2.0 -1.5 -1.0 Drain-source leakage current I DSS V DS=-60V, V GS=0 V, T j=25 °C - - -40 nA V DS=-60V, V GS=0V, T j=150 °C - - -20 mA Gate-source leakage current I GSS V GS=-20V, V DS=0V - - -100 nA Drain-source on-state resistance R DS(on) V GS=-4.5 V, I D=-2.3 A - 140 170 mW V GS=-10 V, I D=-3 A - 101 120 Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=2.44 A 4.6 - S Values 1) Device on 40mm x 40mm x 1.5mm epoxy PCB FR4 with 6cm² (one layer, 70µm thick) copper area for drain connection. PCB is vertical in still air. K/W Rev 2.0 page 2 2015-10-07

OptiMOS™-P Small-Signal-TransistorSymbol Conditions Unit min. typ. max. Dynamic characteristics2) Input capacitance C iss - 814 1083 pF Output capacitance C oss - 248 330 Reverse transfer capacitance Crss - 109 163 Turn-on delay time t d(on) - 8.3 12.5 ns Rise time t r - 10.4 15.6 Turn-off delay time t d(off) - 43.2 64.8 Fall time t f - 11.3 17.0 Gate Charge Characteristics2) Gate to source charge Q gs - -2.42 -3.2 nC Gate to drain charge Q gd - -10.1 -15.2 Gate charge total Q g - -26.3 -39.4 Gate plateau voltage V plateau - -3.1 - V Reverse Diode Diode continous forward current I S - - -3.0 A Diode pulse current I S,pulse - - -12 Diode forward voltage V SD V GS=0 V, I F=-3 A, - 0.80 1.1 V Reverse recovery time2) t rr - 44.8 67.2 ns Reverse recovery charge2) Q rr - 62.9 94.4 nC 2) Defined by design. Not subjected to production test V R=-30 V, I F=-3 A, di F/dt =100 A/µs T A=25 °C Values V GS=0 V, V DS=-25 V, f =1 MHz V DD=-30 V, V GS=-

10 V, I D=-3 A,

R G,ext=2.7 W V DD=-48 V, I D=-3 A, V GS=0 to -10 V Rev 2.0 page 3 2015-10-07

1 Power dissipation 2 Drain current

P tot=f(T A) I D=f(T A); V GS≤-10 V 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 100 µs 10 ms 1 ms DC 10-1 100 101 102 10-3 10-2 10-1 100 101 ID [A] VDS [V] single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10-5 10-4 10-3 10-2 10-1 100 101 102 10-1 100 101 102 103 ZthJA [K/W] tp [s] 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 0 40 80 120 160 Ptot [W] TA [°C] 0.5 1.5 2.5 3.5 0 40 80 120 160 ID [A] TA [°C] Rev 2.0 page 4 2015-10-07

5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 0 2 4 6 8 gfs [S] ID [A] 3.5 V 4 V

4.5 V 5 V

ID [A] VDS [V] 25 °C 125 °C 0 1 2 3 4 ID [A] VGS [V] 6 V 5 V 10 V 3.5 V 4 V 4.5 V 100 150 200 250 0 1 2 3 4 5 6 RDS(on) [mW] ID [A] Rev 2.0 page 5 2015-10-07

9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=-3 A; V GS=-10 V V GS(th)=f(T j); V DS=VGS; I D=-1 mA parameter: I D 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C I F=f(V SD) parameter: T j typ max 160 240 -60 -20 20 60 100 140 RDS(on) [mW] Tj [°C] typ max 2min 0.4 0.8 1.2 1.6 2.4 2.8 -60 -20 20 60 100 140 VGS(th) [V] Tj [°C] Ciss Coss Crss 101 102 103 104 0 20 40 60 C [pF] VDS [V] 25 °C 150 °C 25 °C, 98% 150 °C, 98% 10-3 10-2 10-1 100 101 0 0.4 0.8 1.2 1.6 2 IF [A] VSD [V] Rev 2.0 page 6 2015-10-07

13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=-3 A pulsed parameter: T j(start) parameter: V DD

15 Drain-source breakdown voltage 16 Gate charge waveforms

V BR(DSS)=f(T j); I D=250 µA -60 -20 20 60 100 140 VBR(DSS) [V] Tj [°C] 12 V 30 V 48 V 0 8 16 24 VGS [V] Qgate [nC] 25 °C 100 °C 125 °C 100 101 102 103 10-1 100 101 IAV [A] tAV [µs] V GS Q gate V gs(th) Qg(th) Qgs Qgd Qsw Qg Rev 2.0 page 7 2015-10-07

Package Outline: 179 Footprint: Packaging: Rev 2.0 page 8 2015-10-07

81726 Munich, Germany

© 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information 179 on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 2.0 page 9 2015-10-07