BSP60-BSP62 INFINEON | Alldatasheet

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Technical content

PNP Silicon Darlington Transistor

  • High collector current
  • Low collector-emitter saturation voltage
  • Complementary types: BSP50...BSP52 (NPN)
  • Pb-free (RoHS compliant) package
  • Qualified according AEC Q101 Type Marking Pin Configuration Package BSP60 BSP61 BSP62 BSP60 BSP61 BSP62 1=B 1=B 1=B 2=C 2=C 2=C 3=E 3=E 3=E 4=C 4=C 4=C SOT223 SOT223 SOT223 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage BSP60 BSP61 BSP62 VCEO V Collector-base voltage BSP60 BSP61 BSP62 VCBO Emitter-base voltage VEBO 5 Collector current IC 1 A Peak collector current, tp ≤ 10 ms ICM 2 Base current IB 100 mA Total power dissipation- TS ≤ 124 °C Ptot 1.5 W Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150

Parameter Symbol Value Unit Junction - soldering point1) RthJS ≤ 17 K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 , BSP60 IC = 10 mA, IB = 0 , BSP61 IC = 10 mA, IB = 0 , BCP62 V(BR)CEO V Collector-base breakdown voltage IC = 100 µA, IE = 0 , BSP60 IC = 100 µA, IE = 0 , BSP61 IC = 100 µA, IE = 0 , BSP62 V(BR)CBO Emitter-base breakdown voltage IE = 100 µA, IC = 0 V(BR)EBO 5 - - Collector-emitter cutoff current VCE = VCE0max , VBE = 0 ICES - - 10 µA Emitter-base cutoff current VEB = 4 V, IC = 0 IEBO - - 10 µA DC current gain2) IC = 150 mA, VCE = 10 V IC = 500 mA, VCE = 10 V hFE 1000 2000 Collector-emitter saturation voltage2) IC = 500 mA, IB = 0.55 mA IC = 1 A, IB = 1 mA VCEsat 1.3 1.8 V Base emitter saturation voltage2) IC = 500 mA, IB = 0.5 mA IC = 1 A, IB = 1 mA VBEsat 1.9 2.2 AC Characteristics Transition frequency IC = 100 mA, VCE = 5 V, f = 100 MHz fT - 200 - MHz 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) 2Pulse test: t < 300µs; D < 2%

Switching time test circuit Switching time waveform 10%0 V 90% 10%-VCC td rt ton 10% offt tsf t EHN00068 Vin outV 90%90%

DC current gain hFE = ƒ(IC) VCE = 10 V EHP00667BSP 60...62 10 mA FE 102 103 104 1 10 2 10 3 10 4 Ι C h Collector-emitter saturation voltage IC = ƒ(VCEsat), IB = Parameter EHP00669BSP 60...62 0 1 V 2 4 mA 101 mA 102 Ι C 103 VCE sat = 0.5 mABΙ Base-emitter saturation voltage IC = ƒ(VBEsat), IB = Parameter EHP00670BSP 60...62 0 1 V BE sat 101 V mA = 0.5 mA 4 mA Ι C ΙB Transition frequency fT = ƒ(IC) VCE = 10 V, f = 100 MHz EHP00668BSP 60...62 10 mA f C MHz T Ι 12 3 101

Collector-base capacitance Ccb = ƒ(VCB) Emitter-base capacitance Ceb = ƒ(VEB) 0 4 8 12 16 V 22 VCB(VEB pF CCB(CEB) CCB CEB Total power dissipation Ptot = ƒ(TS) 0 15 30 45 60 75 90 105 120 °C 150 TS 150 300 450 600 750 900 1050 1200 1350 mW 1650 Ptot Permissible Pulse Load Ptotmax/PtotDC = ƒ(tp) EHP00273BSP 60...62 010 D = 101 102 310 10-5 10-4 10-3 10-2 100s 0.005 0.01 0.02 0.05 0.1 0.2 0.5 t p =D T t p T totmax totP DC P pt External resistance RBE = ƒ (TA) VCB = VCEmax RBEmax for thermal stability EHP00666BSP 60...62 05 0 ˚C R A 150 100 BE 105 T Ω

Marking Layout (Example) Packing Reel ø180 mm = 1.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel 2005, 24 CW Date code (YYWW) BCP52-16 Type code Pin 1 12 3 ±0.1 ±0.04 0.5 MIN. 0.28 0.1 MAX. 15˚ MAX. 6.5±0.2 A 4.6 2.30.7±0.1

0.25 M A

1.6±0.1 7±0.3 B0.25 M ±0.23.5 B 3.5 1.4 4.8 1.4 1.11.2 8 0.3 MAX. 6.8 7.55 1.75Pin 1 Manufacturer 0...10˚

81726 Munich, Germany

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