BSP550 SIEMENS | Alldatasheet
Document overview
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Technical content
Mini PROFET ® BSP 550 Semiconductor Group 1 06.96 MiniPROFET
- High-side switch
- Short-circuit protection
- Input protection
- Overtemperature protection with hysteresis
- Overload protection
- Overvoltage protection
- Switching inductive load
- Clamp of negative output voltage with inductive loads
- Undervoltage shutdown
- Maximum current internally limited
- Electrostatic discharge (ESD ) protection
- Reverse battery protection1) Package: SOT 223 Type Ordering code BSP 550 Q67000-S311 Maximum Ratings Parameter Symbol Values Unit Supply voltage range Vbb -0.3...48 V Load current self-limited IL IL(SC ) A Maximum input voltage2) VIN -5.0...Vbb V Maximum input current IIN ±5 m A Inductive load switch-off energy dissipation single pulse IL = 1.0A , TA = 85°C EAS 0.3 J Operating temperature range Storage temperature range Tj Tstg -40 ...+125 -55 ...+150 Max. power dissipation (DC)3) TA = 25 °C Ptot 1.4 W Electrostatic discharge capability (ESD)4) VESD ±1k V Thermal resistance chip - soldering point: chip - ambient3) R thJS R thJA K/W IN3 R in + Vbb Signal GND ESD MINI-PROFET OUT GND Logic Voltage sensor Voltage source Charge pump Level shifter Temperature sensorRectifier Limit for unclamped ind. loads Gate protection Current limit Load GND Load V Logic Overvoltage protection ESD- Diode 1) With resistor RGND =150 Ω in GND connection, resistor in series with IN connections reverse load current limited by connected load. 2) At VIN > Vbb, the input current is not allowed to exceed ±5 mA. 3) BSP 550 on epoxy pcb 40 mm x 40 mm x 1.5 mm with 6 cm2 copper area for Vbb connection 4) HBM according to MIL-STD 883D, Methode 3015.7 Pins 1234 OUT GND IN V bb
Electrical Characteristics
Parameter and Conditions Symbol Values Unit at Tj = 25 °C, Vbb = 24V unless otherwise specified min typ max Load Switching Capabilities and Characteristics On-state resistance (pin 4 to 1) IL = 1.0 A, Vin = high Tj = 25°C Tj = 125°C R ON -- 0.16 0.2 0.38 Ω Nominal load current (pin 4 to 1)5) ISO Standard: VON = Vbb - VOUT = 0.5 V TS = 85 °C IL(ISO) 1.7 -- -- A Turn-on time to 90% VOUT Turn-off time to 10% VOUT RL = 24 Ω ton toff 100 150 µs Slew rate on 10 to 30% VOUT , R L = 24 Ω dV /dton -- 2 4 V/ µs Slew rate off 70 to 40% VOUT , R L = 24 Ω -dV/dtoff -- 2 4 V/ µs Input Allowable input voltage range, (pin 3 to 2)VIN -3.0 -- Vbb V Input turn-on threshold voltage VIN(T+) -- -- 3.0 V Input turn-off threshold voltage VIN(T-) 1.82 -- -- V Input threshold hysteresis ΔVIN(T) -- 0.1 -- V Off state input current (pin 3)VIN(off) = 1.82 V Tj = -25...+125°C IIN(off) 20 -- -- µA On state input current (pin 3)VIN(on) = 3.0 V to Vbb Tj = -25...+125°C IIN(on) -- -- 110 µA 5) IL(ISO) characterizes the MOSFET part of the device and may be higher than the shortcircuit IL(SC) current of the whole device
Parameter and Conditions Symbol Values Unit at Tj = 25 °C, Vbb = 24V unless otherwise specified min typ max Semiconductor Group 3 Operating Parameters Operating voltage Tj =-25...+125°CVbb(on) 12 40 V Undervoltage shutdown Tj =-25...+125°CVbb(under) 7 -- 10.5 V Undervoltage restart Tj =-25...+125°C:Vbb(u rst) -- -- 11 V Undervoltage hysteresis ΔVbb(under -- 0.4 -- V Standby current (pin 4), Vin = lowTj =-25...+100°C Tj =125°C6) Ibb(off) -- 10 25 µA Operating current (pin 2), Vin = high Tj =-25...+125°C IGND -- 1 1.6 mA leakage current (pin 1) Vin = low Tj =-25...+125°CIL(off) -- -- 2 µA Protection Functions Current limit (pin 4 to 1) Tj = 25°C Tj = -25...+125°C IL(SC) 1.4 1.4 2.5 4.0 4.8 A Overvoltage protection Ibb=4mA Tj =-25...+125°CVbb(AZ) 48 -- -- V Output clamp (ind. load switch off) VOUT = Vbb - VON(CL), Ibb = 4mA VON(CL) -- 72 -- V Thermal overload trip temperature Tjt 135 150 -- °C Thermal hysteresis ΔTjt -- 10 -- K Inductive load switch-off energy dissipation7) Tj Start = 85 °C, single pulse, IL = 1.0 A, Vbb = 12 V EAS -- -- 0.3 J Reverse Battery Reverse battery voltage8) -Vbb 30 V Continious reverse drain currentTA = 25°C -IS -- -- 1 A Drain-Source diode voltage IF = 1 A, Vin = low VOUT >Vbb -VON -- -- 1.2 V 6) increase of standby current at Tj = 125°C caused by temperature sense current 7) while demagnetizing load inductance, dissipated energy is EAS = ∫(VON(CL) * iL(t) dt, approx. EAS = 1/2 * L * I2 L * ( VON(CL) VON(CL)-Vbb 8) Requires 150 Ω resistor in GND connection. Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load.
Max allowable power dissipation Ptot = f (TA ,TSP ) Ptot [W] 0 25 50 75 100 125 T T SP A TA, TSP [°C] On state resistance (Vbb-pin to OUT pin) R ON = f (Tj);Vbb = 24 V;IL = 1.0 A R ON [Ω ] 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 -50 -25 0 25 50 75 100 125 98% Tj [°C] Current limit characteristic IL(SC) = f (Von), (Von see testcircuit) IL(SC) [A] 0,5 1,5 2,5 3,5 0 5 10 15 20 25 125°C 25°C -25°C Von [V] Typ. input current IIN = f(VIN); Vbb = 24 V IIN [µA] 0 5 10 15 20 25 125°C 25°C -25°C VIN [V]
Typ. overload current IL(lim) = f (t), Vbb=24V, no heatsink, Param.:Tjstart IL(lim) [A] 0.5 1.5 2.5 - 202468 1 0 1 2 1 4 1 6 1 8 125°C -25°C t [ms] Short circuit current IL(SC) = f (Tj);Vbb = 30 V; IL(SC) [Α ] 0,5 1,5 2,5 -25 0 25 50 75 100 125 Tj [°C] Typ. operating current IGND = f (Tj), Vbb=30V, VIN=high IGND [mA] 0.2 0.4 0.6 0.8 -25 0 25 50 75 100 125 Tj [°C] Typ. standby current Ibb(off) = f(Tj); Vbb = 30 V, VIN = low Ibb(off) [µA] -25 0 25 50 75 100 125 150 Tj [°C]
Typ. input turn on voltage threshold VIN(T+) = f (Tj) VIN(T+) [V] 0.5 1.5 2.5 -25 0 25 50 75 100 125 30V 18V Tj [°C] Typ. on-state resistance (Vbb-Pin to OUT-Pin) R ON = f (Vbb); IL = 1.0A, Tj = 25 °C; R ON [mΩ ] 100 120 140 160 0 5 10 15 20 25 30 35 40 45 Vbb [V] Test circuit
Package: all dimensions in mm. SOT 223/4: