BSP550 INFINEON | Alldatasheet

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Technical content

Mini PROFET ® BSP 550 Semiconductor Group Page 1 of 7 20.06.96 MiniPROFET

  • High-side switch
  • Short-circuit protection
  • Input protection
  • Overtemperature protection with hysteresis
  • Overload protection
  • Overvoltage protection
  • Switching inductive load
  • Clamp of negative output voltage with inductive loads
  • Undervoltage shutdown
  • Maximum current internally limited
  • Electrostatic discharge (ESD ) protection
  • Reverse battery protection1) Package: SOT 223 Type Ordering code BSP 550 Q67000-S311 Maximum Ratings Parameter Symbol Values Unit Supply voltage range Vbb -0.3...48 V Load current self-limited IL IL(SC ) A Maximum input voltage2) VIN -5.0...Vbb V Maximum input current IIN ±5 m A Inductive load switch-off energy dissipation single pulse IL = 1.0A , TA = 85°C EAS 0.3 J Operating temperature range Storage temperature range Tj Tstg -40 ...+125 -55 ...+150 Max. power dissipation (DC)3) TA = 25 °C Ptot 1.4 W Electrostatic discharge capability (ESD)4) VESD ±1k V Thermal resistance chip - soldering point: chip - ambient3) R thJS R thJA K/W IN3 R in + Vbb Signal GND ESD MINI-PROFET OUT GND Logic Voltage sensor Voltage source Charge pump Level shifter Temperature sensorRectifier Limit for unclamped ind. loads Gate protection Current limit Load GND Load V Logic Overvoltage protection ESD- Diode 1) With resistor RGND =150 Ω in GND connection, resistor in series with IN connections reverse load current limited by connected load. 2) At VIN > Vbb, the input current is not allowed to exceed ±5 mA. 3) BSP 550 on epoxy pcb 40 mm x 40 mm x 1.5 mm with 6 cm2 copper area for Vbb connection 4) HBM according to MIL-STD 883D, Methode 3015.7 Pins 1234 OUT GND IN V bb

Semiconductor Group Page 2 20.06.96

Electrical Characteristics

Parameter and Conditions Symbol Values Unit at Tj = 25 °C, Vbb = 24V unless otherwise specified min typ max Load Switching Capabilities and Characteristics On-state resistance (pin 4 to 1) IL = 1.0 A, Vin = high Tj = 25°C Tj = 125°C R ON -- 0.16 0.2 0.38 Ω Nominal load current (pin 4 to 1)5) ISO Standard: VON = Vbb - VOUT = 0.5 V TS = 85 °C IL(ISO) 1.4 -- -- A Turn-on time to 90% VOUT Turn-off time to 10% VOUT RL = 24 Ω ton toff 100 150 µs Slew rate on 10 to 30% VOUT , R L = 24 Ω dV /dton - -24 V / µs Slew rate off 70 to 40% VOUT , R L = 24 Ω -dV/dtoff - -24 V / µs Input Allowable input voltage range, (pin 3 to 2)VIN -3.0 -- Vbb V Input turn-on threshold voltage VIN(T+) -- -- 3.0 V Input turn-off threshold voltage VIN(T-) 1.82 -- -- V Input threshold hysteresis ΔVIN(T) -- 0.1 -- V Off state input current (pin 3)VIN(off) = 1.82 V Tj = -25...+125°C IIN(off) 20 -- -- µA On state input current (pin 3)VIN(on) = 3.0 V to Vbb Tj = -25...+125°C IIN(on) -- -- 110 µA 5) IL(ISO) is limited by the current limitation, see IL(SC)

Parameter and Conditions Symbol Values Unit at Tj = 25 °C, Vbb = 24V unless otherwise specified min typ max Semiconductor Group Page 3 20.06.96 Operating Parameters Operating voltage Tj =-25...+125°CVbb(on) 12 40 V Undervoltage shutdown Tj =-25...+125°CVbb(under) 7 -- 10.5 V Undervoltage restart Tj =-25...+125°C:Vbb(u rst) -- -- 11 V Undervoltage hysteresis ΔVbb(under) -- 0.4 -- V Standby current (pin 4), Vin = lowTj =-25...+100°C Tj =125°C6) Ibb(off) -- 10 25 µA Operating current (pin 2), Vin = high Tj =-25...+125°C IGND -- 1 1.6 mA leakage current (pin 1) Vin = low Tj =-25...+125°CIL(off) -- -- 2 µA Protection Functions Current limit (pin 4 to 1) Tj = 25°C Tj = -25...+125°C IL(SC) 1.4 1.4 2.5 4.0 4.8 A Overvoltage protection Ibb=4mA Tj =-25...+125°CVbb(AZ) 48 -- -- V Output clamp (ind. load switch off) VOUT = Vbb - VON(CL), Ibb = 4mA VON(CL) -- 72 -- V Thermal overload trip temperature Tjt 135 150 -- °C Thermal hysteresis ΔTjt -- 10 -- K Inductive load switch-off energy dissipation7) Tj Start = 85 °C, single pulse, IL = 1.0 A, Vbb = 12 V EAS -- -- 0.3 J Reverse Battery Reverse battery voltage8) -Vbb 30 V Continious reverse drain currentTA = 25°C -IS -- -- 1 A Drain-Source diode voltage IF = 1 A, Vin = low VOUT >Vbb -VON -- -- 1.2 V 6) increase of standby current at Tj = 125°C caused by temperature sense current 7) while demagnetizing load inductance, dissipated energy is EAS = ∫(VON(CL) * iL(t) dt, approx. EAS = 1/2 * L * I2 L * ( VON(CL) VON(CL)-Vbb 8) Requires 150 Ω resistor in GND connection. Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load.

Semiconductor Group Page 4 20.06.96 Max allowable power dissipation Ptot = f (TA ,TSP ) Ptot [W] 0 25 50 75 100 125 T T SP A TA, TSP [°C] On state resistance (Vbb-pin to OUT pin) R ON = f (Tj);Vbb = 24 V;IL = 1.0 A R ON [Ω ] 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 -50 -25 0 25 50 75 100 125 98% Tj [°C] Current limit characteristic IL(SC) = f (Von), (Von see testcircuit) IL(SC) [A] 0,5 1,5 2,5 3,5 0 5 10 15 20 25 125°C 25°C -25°C Von [V] Typ. input current IIN = f(VIN); Vbb = 24 V IIN [µA] 0 5 10 15 20 25 125°C 25°C -25°C VIN [V]

Semiconductor Group Page 5 20.06.96 Typ. overload current IL(lim) = f (t), Vbb=24V, no heatsink, Param.:Tjstart IL(lim) [A] 0.5 1.5 2.5 - 2 02468 1 0 1 2 1 4 1 6 1 8 125°C -25°C t [ms] Short circuit current IL(SC) = f (Tj);Vbb = 30 V; IL(SC) [Α ] 0,5 1,5 2,5 -25 0 25 50 75 100 125 Tj [°C] Typ. operating current IGND = f (Tj), Vbb=30V, VIN=high IGND [mA] 0.2 0.4 0.6 0.8 -25 0 25 50 75 100 125 Tj [°C] Typ. standby current Ibb(off) = f(Tj); Vbb = 30 V, VIN = low Ibb(off) [µA] -25 0 25 50 75 100 125 150 Tj [°C]

Semiconductor Group Page 6 20.06.96 Typ. input turn on voltage threshold VIN(T+) = f (Tj) VIN(T+) [V] 0.5 1.5 2.5 -25 0 25 50 75 100 125 30V 18V Tj [°C] Typ. on-state resistance (Vbb-Pin to OUT-Pin) R ON = f (Vbb); IL = 1.0A, Tj = 25 °C; R ON [mΩ ] 100 120 140 160 0 5 10 15 20 25 30 35 40 45 Vbb [V] Test circuit

Semiconductor Group Page 7 20.06.96 Package: all dimensions in mm. SOT 223/4: Edition 7.97 Published by Siemens AG, Bereich Halbleiter Vetrieb, Werbung, Balanstraße 73,

81541 München

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