BSP50BSP52 SIEMENS | Alldatasheet

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Technical content

NPN Silicon Darlington Transistors BSP 50 … BSP 52 5.91 Maximum Ratings Type Ordering Code (tape and reel) Marking Package 1) BSP 50 BSP 51 BSP 52 Q62702-P1163 Q62702-P1164 Q62702-P1165 BSP 50 BSP 51 BSP 52 SOT-223 Pin Configuration 1 2 3 4 B C E C 1) For detailed information see chapter Package Outlines. 2) Package mounted on epoxy pcb 40 mm× 40 mm × 1.5 mm/6 cm2 Cu. Parameter Symbol Values Unit Emitter-base voltage VEB0 Collector-base voltage VCB0 Junction temperature Tj ˚C Total power dissipation,TS = 124 ˚C Ptot W Storage temperature range Tstg Collector-emitter voltage VCER V Thermal Resistance Junction - ambient2) Rth JA ≤ 72 K/W 1.5 150 – 65 … + 150 45 60 BSP 50 BSP 51 BSP 52 Collector current IC A1 Peak collector current ICM 2 Junction - soldering point Rth JS ≤ 17 60 80 100 Base current IB 0.1

  • High collector current
  • Low collector-emitter saturation voltage
  • Complementary types: BSP 60 … BSP 62 (PNP)

… BSP 52

Electrical Characteristics

atTA = 25 ˚C, unless otherwise specified. DC current gain2) IC = 150 mA,VCE = 10 V IC = 500 mA,VCE = 10 V Collector-emitter breakdown voltage1) IC = 10 mA BSP 50 BSP 51 BSP 52 VV(BR)CER µACollector-emitter cutoff current VCE =VCERmax ,VBE = 0 ICES ––1 0 UnitValuesParameter Symbol min. typ. max. DC characteristics Emitter-base breakdown voltage IE = 100µA,IB = 0 V(BR)EB0 5–– VCollector-emitter saturation voltage2) IC = 500 mA,IB = 0.5 mA IC = 1 A,IB = 1 mA VCEsat 1.3 1.8 –hFE 1000 2000 MHzTransition frequency IC = 100 mA,VCE = 5 V,f = 100 MHz fT – 200 – AC characteristics ns ns Switching times IC = 500 mA,IB1 =IB2 = 0.5 mA (see diagrams) ton toff 400 1500 Collector-base breakdown voltage IC = 100µA,IB = 0 BSP 50 BSP 51 BSP 52 V (BR)CB0 100 Emitter-base cutoff current V EB = 4 V,IC = 0 IEB0 ––1 0 Base-emitter saturation voltage2) IC = 500 mA,IB = 0.5 mA IC = 1 A,IB = 1 mA VBEsat 1.9 2.2 1) Compare RBE for thermal stability. 2) Pulse test conditions:t ≤ 300µs,D = 2 %.

… BSP 52 Switching time test circuit Switching time waveform

… BSP 52 Total power dissipationPtot= f(TA*;TS) * Package mounted on epoxy Permissible pulse loadPtot max/Ptot DC= f(tp) External resistanceRBE =f (TA) VCB =VCE max RBE max for thermal stability DC current gainhFE =f (IC ) VCE = 10 V

… BSP 52 Collector-emitter saturation voltage IC =f (VCE sat),IB-parameter Transition frequencyfT = f(IC ) VCE = 5 V,f = 100 MHz Base-emitter saturation voltage IC =f (VBE sat),IB-parameter