BSP452

BSP452 SIEMENS | Alldatasheet

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Technical content

Mini PROFET ® BSP 452 Semiconductor Group 1 08.96 MiniPROFET

• High-side switch
• Short-circuit protection
• Input protection
• Overtemperature protection with hysteresis
• Overload protection
• Overvoltage protection
• Switching inductive load
• Clamp of negative output voltage with inductive loads
• Undervoltage shutdown
• Maximum current internally limited
• Electrostatic discharge (ESD ) protection
• Reverse battery protection1) Package: SOT 223 Type Ordering code BSP 452 Q67000-S271 Application
• µC compatible power switch for 12 V DC grounded loads
• All types of resistive, inductive and capacitive loads
• Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input,monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection functions. Blockdiagramm: IN3 R in + Vbb Signal GND ESD MINI-PROFET OUT GND Logic Voltage sensor Voltage source Charge pump Level shifter Temperature sensorRectifier Limit for unclamped ind. loads Gate protection Current limit Load GND Load V Logic Overvoltage protection ESD- Diode 1) With resistor RGND =150 Ω in GND connection, resistor in series with IN connections reverse load current limited by connected load.

Mini PROFET ® BSP 452 Semiconductor Group 2 Pin Symbol Function

1 OUT O Output to the load

2 GND - Logic ground

3 IN I Input, activates the power switch in case of logical high signal

4 Vbb + Positive power supply voltage

Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Symbol Values Unit Supply voltage Vbb 40 V Load current self-limited IL IL(SC ) A Maximum input voltage2) VIN -5.0...Vbb V Maximum input current IIN ±5 m A Inductive load switch-off energy dissipation, single pulse IL = 0.5A , TA = 150°C (not tested, specified by design) EAS 0.5 J Load dump protection3) VLoadDump =U A+Vs R L= 24Ω R I=2Ω , td=400ms, IN= low or high, U A=12V R L= 80Ω (not tested, specified by design) VLoad dump4) 47 V Electrostatic discharge capability (ESD )5) PIN 3 PIN 1,2,4 VESD ±1 kV Operating temperature range Storage temperature range Tj Tstg -40 ...+150 -55 ...+150 Max. power dissipation (DC)6) TA = 25 °C Ptot 1.8 W Thermal resistance chip - soldering point: chip - ambient:6) R thJS R thJA K/W 2) At VIN > Vbb, the input current is not allowed to exceed ±5 mA. 3) Supply voltages higher than Vbb(AZ) require an external current limit for the GND pin, e.g. with a 150 Ω resistor in the GND connection A resistor for the protection of the input is integrated. 4) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 5) HBM according to MIL-STD 883D, Methode 3015.7 6) BSP 452 on epoxy pcb 40 mm x 40 mm x 1.5 mm with 6 cm2 copper area for Vbb connection

Mini PROFET ® BSP 452 Semiconductor Group 3

Electrical Characteristics

Parameter and Conditions Symbol Values Unit at Tj = 25 °C, Vbb = 13.5V unless otherwise specified min typ max Load Switching Capabilities and Characteristics On-state resistance (pin 4 to 1) IL = 0.5 A, Vin = high Tj = 25°C Tj = 150°C R ON -- 0.16 0.2 0.4 Ω Nominal load current (pin 4 to 1)7) ISO Standard: VON = Vbb - VOUT = 0.5 V TS = 85 °C IL(ISO) 1.7 -- -- A Turn-on time to 90% VOUT Turn-off time to 10% VOUT RL = 24 Ω ton toff 100 150 µs Slew rate on 10 to 30% VOUT , R L = 24 Ω dV /dton -- 2 4 V/ µs Slew rate off 70 to 40% VOUT , R L = 24 Ω -dV/dtoff -- 2 4 V/ µs Input Allowable input voltage range, (pin 3 to 2)VIN -3.0 -- Vbb V Input turn-on threshold voltage Tj = -40...+150°C VIN(T+) -- -- 3.5 V Input turn-off threshold voltage Tj = -40...+150°C VIN(T-) 1.5 -- -- V Input threshold hysteresis ΔVIN(T) -- 0.5 -- V Off state input current (pin 3)VIN(off) = 1.2 V Tj = -40...+150°C IIN(off) 10 -- 60 µA On state input current (pin 3)VIN(on) = 3.0 V to Vbb Tj = -40...+150°C IIN(on) 10 -- 100 µA Input resistance R IN 1.5 2.8 3.5 k Ω 7) IL(ISO) characterizes the MOSFET part of the device and may be higher than the shortcircuit current IL(SC) of the whole device

Mini PROFET ® BSP 452 Semiconductor Group 4 Parameter and Conditions Symbol Values Unit at Tj = 25 °C, Vbb = 13.5V unless otherwise specified min typ max Operating Parameters Operating voltage8) Tj =-40...+150°CVbb(on) 5.0 -- 34 V Undervoltage shutdown Tj =-40...+150°CVbb(under) 3.5 -- 5 V Undervoltage restart Tj =-40...+25°C Tj =+150°C Vbb(u rst) -- -- 6.5 7.0 V Undervoltage restart of charge pumpe see diagram page 7 Vbb(ucp) -- 5.6 7 V Undervoltage hysteresis ΔVbb(under) = Vbb(u rst) - Vbb(under) ΔVbb(under) -- 0.3 -- V Overvoltage shutdown Tj =-40...+150°CVbb(over) 34 -- 42 V Overvoltage restart Tj =-40...+150°CVbb(o rst) 33 -- -- V Overvoltage hysteresis Tj =-40...+150°CΔVbb(over) -- 0.7 -- V Standby current (pin 4), Vin = lowTj =-40...+150°CIbb(off) -- 10 25 µA Operating current (pin 2), Vin = 5 V IGND -- 1 1.6 mA leakage current (pin 1) Vin = low Tj =-40...+25°C Tj =150°C IL(off) -- 2 5 µA Protection Functions Current limit (pin 4 to 1) Tj = 25°C Vbb = 20V Tj = -40...+150°C IL(SC) 0.7 0.7 1.5 2.4 A Overvoltage protection Ibb=4mA Tj =-40...+150°CVbb(AZ) 41 -- -- V Output clamp (ind. load switch off) at VOUT =Vbb-VON (CL ), Ibb = 4mA VON(CL) 41 47 -- V Thermal overload trip temperature Tjt 150 -- -- °C Thermal hysteresis ΔTjt -- 10 -- K Inductive load switch-off energy dissipation9) Tj Start = 150 °C, single pulse, IL = 0.5 A, Vbb = 12 V (not tested, specified by design) EAS -- -- 0.5 J Reverse battery (pin 4 to 2) 10) (not tested, specified by design) -Vbb -- -- 30 V 8) At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT ≈Vbb - 2 V 9) While demagnetizing load inductance, dissipated energy in PROFET is EAS = ∫ VON(CL) * iL(t) dt, approx. EAS = 1/2 * L * I2 L * ( VON(CL) VON(CL) - Vbb ) 10)Requires 150 Ω resistor in GND connection. Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load.

Mini PROFET ® BSP 452 Semiconductor Group 5 Max. allowable power dissipation Ptot = f (TA ,TSP ) Ptot [W] 0 25 50 75 100 125 150 T A TSP TA, TSP [°C] On state resistance (Vbb-pin to OUT-pin) R ON = f (Tj); Vbb = 13.5 V; IL = 0.5 A R ON [Ω ] 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 -50 -25 0 25 50 75 100 125 150 98% Tj [°C] Current limit characteristic IL(SC) = f (Von); (Von see testcircuit) IL(SC) [A] 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 02468 1 0 1 2 1 4 25°C 150°C -40°C Von [V] Typ. input current IIN = f (VIN); Vbb = 13,5 V IIN [µA] 0 2 4 6 8 10 12 14 -40°C +150°C +25°C VIN [V]

Mini PROFET ® BSP 452 Semiconductor Group 6 Typ. operating current IGND = f (Tj); Vbb = 13,5 V; VIN = high IGND [mA] 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 -50 -25 0 25 50 75 100 125 150 Tj [°C] Typ. standby current Ibb(off) = f (Tj); Vbb = 13,5 V; VIN = low Ibb(off) [µA] -50 -25 0 25 50 75 100 125 150 Tj [°C] Typ. overload current IL(lim) = f (t); Vbb = 13,5 V, no heatsink, Param.: Tjstart IL(lim) [A] 0.2 0.4 0.6 0.8 1.2 1.4 -50 0 50 100 150 200 250 300 350 400 -40°C+150°C +25°C t [ms] Short circuit current IL(SC) = f (Tj); Vbb = 13,5 V IL(SC) [A] 0.2 0.4 0.6 0.8 1.2 1.4 -50 -25 0 25 50 75 100 125 150 Tj [°C]

Mini PROFET ® BSP 452 Semiconductor Group 7 Typ. input turn on voltage threshold VIN(T+) = f (Tj); VIN(T+) [V] 0.5 1.5 2.5 -50 -25 0 25 50 75 100 125 150 13V Tj [°C] Typ. on-state resistance (Vbb-Pin to Out-Pin) R ON = f (Vbb,IL); IL=0.5A, Tj = 25°C R ON [mΩ ] 100 150 200 250 300 0 5 10 15 20 25 Vbb [V] Figure 6: Undervoltage restart of charge pumpe VON [V] V bb(under) V bb(u rst) Vbb(over) Vbb(o rst) Vbb(u cp) Vbb [V] charge pump starts at Vbb(ucp) about 7 V typ. Test circuit

Mini PROFET ® BSP 452 Semiconductor Group 8 Package: all dimensions in mm. SOT 223/4: