BSP452-E6327

BSP452-E6327 INFINEON | Alldatasheet

Document overview

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• PDF pages: 8

Technical content

miniPROFET® BSP 452 Data Book 1 20.08.96

• High-side switch
• Short-circuit protection
• Input protection
• Overtemperature protection with hysteresis
• Overload protection
• Overvoltage protection
• Switching inductive load
• Clamp of negative output voltage with inductive loads
• Undervoltage shutdown
• Maximum current internally limited
• Electrostatic discharge (ESD) protection
• Reverse battery protection1) Package: SOT 223 Type Ordering code BSP 452 Q67000-S271 Application
• µC compatible power switch for 12 V DC grounded loads
• All types of resistive, inductive and capacitive loads
• Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input,monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection functions. Blockdiagramm: IN3 Rin + Vbb Signal GND ESD miniPROFET OUT GND Logic Voltage sensor Voltage source Charge pump Level shifter Temperature sensorRectifier Limit for unclamped ind. loads Gate protection Current limit Load GND Load VLogic Overvoltage protection ESD- Diode 1) With resistor RGND=150 Ω in GND connection, resistor in series with IN connections reverse load current limited by connected load. SOT-223 SOT -223

miniPROFET® BSP 452 Data Book 2 20.08.96 Pin Symbol Function

1 OUT O Output to the load

2 GND - Logic ground

3 IN I Input, activates the power switch in case of logical high signal

4 Vbb + Positive power supply voltage

Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Symbol Values Unit Supply voltage Vbb 40 V Load current self-limited IL IL(SC) A Maximum input voltage2) VIN -5.0...Vbb V Maximum input current IIN ±5 m A Inductive load switch-off energy dissipation, single pulse IL = 0.5A , TA = 150°C (not tested, specified by design) EAS 0.5 J Load dump protection3) VLoadDump=UA+Vs RL= 24Ω RI=2Ω , td=400ms, IN= low or high, UA=13,5V RL= 80Ω (not tested, specified by design) VLoad dump 4) 60 V Electrostatic discharge capability (ESD)5) PIN 3 PIN 1,2,4 VESD ±1 kV Operating temperature range Storage temperature range Tj Tstg -40 ...+150 -55 ...+150 Max. power dissipation (DC)6) TA = 25 °C Ptot 1.8 W Thermal resistance chip - soldering point: chip - ambient:6) RthJS RthJA K/W 2) At VIN > Vbb, the input current is not allowed to exceed ±5 mA. 3) Supply voltages higher than Vbb(AZ) require an external current limit for the GND pin, e.g. with a 150 Ω resistor in the GND connection A resistor for the protection of the input is integrated. 4) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 5) HBM according to MIL-STD 883D, Methode 3015.7 6) BSP 452 on epoxy pcb 40 mm x 40 mm x 1.5 mm with 6 cm2 copper area for Vbb connection

miniPROFET® BSP 452 Data Book 3 20.08.96

Electrical Characteristics

Parameter and Conditions Symbol Values Unit at Tj = 25 °C, Vbb = 13.5V unless otherwise specified min typ max Load Switching Capabilities and Characteristics On-state resistance (pin 4 to 1) IL = 0.5 A, Vin = high Tj = 25°C Tj = 150°C RON -- 0.16 0.2 0.4 Ω Nominal load current (pin 4 to 1)7) ISO Standard: VON = Vbb - VOUT = 0.5 V TS = 85 °C IL(ISO) 0.7 -- -- A Turn-on time to 90% VOUT Turn-off time to 10% VOUT RL = 24 Ω ton toff 100 150 µs Slew rate on 10 to 30% VOUT, RL = 24 Ω dV /dton -- 2 4 V/ µs Slew rate off 70 to 40% VOUT, RL = 24 Ω -dV/dtoff -- 2 4 V/ µs Input Allowable input voltage range, (pin 3 to 2) VIN -3.0 -- Vbb V Input turn-on threshold voltage Tj = -40...+150°C VIN(T+) -- -- 3.5 V Input turn-off threshold voltage Tj = -40...+150°C VIN(T-) 1.5 -- -- V Input threshold hysteresis ∆VIN(T) -- 0.5 -- V Off state input current (pin 3) VIN(off) = 1.2 V Tj = -40...+150°C IIN(off) 10 -- 60 µA On state input current (pin 3) VIN(on) = 3.0 V to Vbb Tj = -40...+150°C IIN(on) 10 -- 100 µA Input resistance RIN 1.5 2.8 3.5 k Ω 7) IL(ISO) is limited by current limitation, see IL(SC), next page

miniPROFET® BSP 452 Data Book 4 20.08.96 Parameter and Conditions Symbol Values Unit at Tj = 25 °C, Vbb = 13.5V unless otherwise specified min typ max Operating Parameters Operating voltage8) Tj =-40...+150°C Vbb(on) 5.0 -- 34 V Undervoltage shutdown Tj =-40...+150°C Vbb(under) 3.5 -- 5 V Undervoltage restart Tj =-40...+25°C Tj =+150°C Vbb(u rst) -- -- 6.5 7.0 V Undervoltage restart of charge pumpe see diagram page 7 Vbb(ucp) -- 5.6 7 V Undervoltage hysteresis ∆Vbb(under) = Vbb(u rst) - Vbb(under) ∆Vbb(under) -- 0.3 -- V Overvoltage shutdown Tj =-40...+150°C Vbb(over) 34 -- 42 V Overvoltage restart Tj =-40...+150°C Vbb(o rst) 33 -- -- V Overvoltage hysteresis Tj =-40...+150°C ∆Vbb(over) -- 0.7 -- V Standby current (pin 4), Vin = low Tj =-40...+150°C Ibb(off) -- 10 25 µA Operating current (pin 2), Vin = 5 V IGND -- 1 1.6 mA leakage current (pin 1) Vin = low Tj =-40...+25°C Tj =150°C IL(off) -- 2 5 µA Protection Functions Current limit (pin 4 to 1) Tj = 25°C Vbb = 20V Tj = -40...+150°C IL(SC) 0.7 0.7 1.5 2.4 A Overvoltage protection Ibb=4mA Tj =-40...+150°C Vbb(AZ) 41 -- -- V Output clamp (ind. load switch off) at VOUT=Vbb-VON(CL), Ibb = 4mA VON(CL) 41 47 -- V Thermal overload trip temperature Tjt 150 -- -- °C Thermal hysteresis ∆Tjt -- 10 -- K Inductive load switch-off energy dissipation9) Tj Start = 150 °C, single pulse, IL = 0.5 A, Vbb = 12 V (not tested, specified by design) EAS -- -- 0.5 J Reverse battery (pin 4 to 2) 10) (not tested, specified by design) -Vbb -- -- 30 V 8) At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT ≈Vbb - 2 V 9) While demagnetizing load inductance, dissipated energy in PROFET is EAS= ∫ VON(CL) * iL(t) dt, approx. EAS= 1/2 * L * I2 L * ( VON(CL) VON(CL) - Vbb ) 10) Requires 150 Ω resistor in GND connection. Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load.

miniPROFET® BSP 452 Data Book 5 20.08.96 Max. allowable power dissipation Ptot = f (TA,TSP) Ptot [W] 0 25 50 75 100 125 150 TA TSP TA, TSP[°C] On state resistance (Vbb-pin to OUT-pin) RON = f (Tj); Vbb = 13.5 V; IL = 0.5 A RON [Ω] 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 -50 -25 0 25 50 75 100 125 150 98% Tj [°C] Current limit characteristic IL(SC) = f (Von); (Von see testcircuit) IL(SC) [A] 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 02468 1 0 1 2 1 4 25°C 150 °C -40 °C Von [V] Typ. input current IIN = f (VIN); Vbb = 13,5 V IIN [µA] 02468 1 0 1 2 1 4 -40 °C +150 °C +25 °C VIN [V]

miniPROFET® BSP 452 Data Book 6 20.08.96 Typ. operating current IGND = f (Tj); Vbb = 13,5 V; VIN = high IGND [mA] 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 -50 -25 0 25 50 75 100 125 150 Tj [°C] Typ. standby current Ibb(off) = f (Tj); Vbb = 13,5 V; VIN = low Ibb(off) [µA] -50 -25 0 25 50 75 100 125 150 Tj [°C] Typ. overload current IL(lim) = f (t); Vbb = 13,5 V, no heatsink, Param.: Tjstart IL(lim) [A] 0.2 0.4 0.6 0.8 1.2 1.4 -50 0 50 100 150 200 250 300 350 400 -40°C+150°C +25°C t [ms] Short circuit current IL(SC) = f (Tj); Vbb = 13,5 V IL(SC) [A] 0.2 0.4 0.6 0.8 1.2 1.4 -50 -25 0 25 50 75 100 125 150 Tj [°C]

miniPROFET® BSP 452 Data Book 7 20.08.96 Typ. input turn on voltage threshold VIN(T+) = f (Tj); VIN(T+) [V] 0.5 1.5 2.5 -50 -25 0 25 50 75 100 125 150 13V Tj [°C] Typ. on-state resistance (Vbb-Pin to Out-Pin) RON = f (Vbb,IL); IL=0.5A, Tj = 25°C RON [mΩ] 100 150 200 250 300 0 5 10 15 20 25 Vbb [V] Figure 6: Undervoltage restart of charge pumpe VON [V] V bb(under) V bb(u rst) V bb(over) V bb(o rst) Vbb(u cp) Vbb [V] charge pump starts at Vbb(ucp) about 7 V typ. Test circuit

mini PROFET® BSP 452 Semiconductor Group 8 20.08.96 Package: all dimensions in mm. SOT 223/4: Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81669 München © Infineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.