BSP42 ZETEX | Alldatasheet
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ISSUE 4 – MARCH 2001 ✪ COMPLEMENTARY TYPE – BSP32 PARTMARKING DETAIL – BSP42 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO 90 V Collector-Emitter Voltage V CEO 80 V Emitter-Base Voltage V EBO 5V Peak Pulse Current I CM 2A Continuous Collector Current I C 1A Base Current I B 100 mA Power Dissipation at T amb =25°C P tot 2W Operating and Storage Temperature Range T j:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V (BR)CBO 90 V IC=100 µ A Collector-Emitter Breakdown Voltage V(BR)CEO 80 V I C=10mA Emitter-Base Breakdown Voltage V(BR)EBO 5V IE=10 µ A Collector Cut-Off Current ICBO 100 nA µ A VCB=60V VCB=60V, T amb=125°C Collector-Emitter Saturation Voltage VCE(sat) 0.25 0.5 V V IC =150mA, I B=15mA IC =500mA, I B=50mA Base-Emitter Saturation Voltage VBE(sat) 1.0 1.2 V V IC =150mA, I B=15mA IC =500mA, I B=50mA Static Forward Current Transfer Ratio hFE 10 120 I C =100 µ A, V CE=5V IC =100mA, V CE=5V IC =500mA, V CE=5V Output Capacitance C obo 12 pF V CB =10V, f =1MHz Input Capacitance C ibo 90 pF V EB =0.5V, f=1MHz Transition Frequency f T 100 MHz I C=50mA, V CE=10V f =35MHz Turn-On Time T on 250 ns V CC =20V, I C =100mA IB1 =-I B2 =-5mATurn-Off Time T off 1000 ns *Measured under pulsed conditions. For typical characteristics graphs see FMMT493 datasheet. BSP42 C C E B TBA