BSP40

BSP40 ZETEX | Alldatasheet

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ISSUE 3 – FEBRUARY 1996 ✪ COMPLEMENTARY TYPES – BSP40 – BSP30 BSP42 – BSP32 PARTMARKING DETAIL – Device type in full ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL BSP40 BSP42 UNIT Collector-Base Voltage V CBO 70 90 V Collector-Emitter Voltage V CEO 60 80 V Emitter-Base Voltage V EBO 5V Peak Pulse Current I CM 2A Continuous Collector Current I C 1A Base Current I B 100 mA Power Dissipation at Tamb =25°C P tot 2W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Collector-Base BSP40 Breakdown Voltage BSP42 V(BR)CBO 70 V V IC=100µA IC=100µA Collector-Emitter BSP40 Breakdown Voltage BSP42 V(BR)CEO 60 V V IC=10mA IC=10mA Emitter-Base Breakdown Voltage V(BR)EBO 5V IE=10µA Collector Cut-Off Current ICBO 100 nA µA VCB=60V VCB=60V, Tamb=125°C Collector-Emitter Saturation Voltage VCE(sat) 0.25 0.5 V V IC =150mA, IB=15mA IC =500mA, IB=50mA Base-Emitter Saturation Voltage VBE(sat) 1.0 1.2 V V IC =150mA, IB=15mA IC =500mA, IB=50mA Static Forward Current Transfer Ratio hFE 10 120 I C =100µA, VCE=5V IC =100mA, VCE=5V IC =500mA, VCE=5V Collector Capacitance C c 12 pF V CB =10V, f =1MHz Emitter Capacitence C e 90 pF V EB =0.5V, f=1MHz Transition Frequency f T 100 MHz I C=50mA, VCE=10V f =35MHz Turn-On Time T on 250 ns V CC =20V, IC =100mA IB1 =-IB2 =-5mATurn-Off Time T off 1000 ns *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%For typical characteristics graphs see FMMT493 datasheet. BSP40 BSP42 C C E B 3 - 63