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Technical content

Features

  • N-channel
  • Enhancement mode
  • Avalanche rated
  • Qualified according to AEC Q101
  • 100% lead-free; RoHS compliant
  • Halogen-free according to IEC61249-2-21 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T A=25 °C 1.8 A T A=70 °C 1.5 Pulsed drain current I D,pulse T A=25 °C 7.3 Avalanche energy, single pulse E AS I D=1.8 A, R GS=25 W 33 mJ Reverse diode dv /dt dv /dt I D=1.8 A, V DS=80 V, di /dt =200 A/µs, T j,max=150 °C 6 kV/µs Gate source voltage V GS ±20 V Power dissipation1) P tot T A=25 °C W Operating and storage temperature T j, T stg -55 ... 150 °C ESD Class JESD22-A114 -HBM 0 (<250V) Soldering Temperature 260 °C IEC climatic category; DIN IEC 68-1 55/150/56 Value 1.8 PG-SOT223 Type Package Tape and Reel Information Marking Halogen-Free Packing BSP373N SOT223 H6327: 1000 pcs/ reel BSP373N Yes Non dry VDS 100 V RDS(on),max 0.24 W ID 1.8 A Product Summary Rev 2.0 page 1 2013-04-04

Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance junction - soldering point R thJS - - 25 K/W Thermal resistance R thJA minimal footprint - - 110 junction - ambient 6 cm2 cooling area1) - - 70 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA 100 - - V Gate threshold voltage V GS(th) V DS=Vgs V, I D=218 µA 2.1 3.0 4.0 Drain-source leakage current I DSS V DS=100 V, V GS=0 V, T j=25 °C - - 0.1 mA V DS=100 V, V GS=0 V, T j=150 °C - - 10 Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 10 nA Drain-source on-state resistance RDS(on) V GS=10 V, I D=1.8 A - 177 240 mW Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=1.5 A 3.23 - S Values 1) Device on 40mm x 40mm x 1.5mm epoxy PCB FR4 with 6cm² (one layer, 70µm thick) copper area for drain connection. PCB is vertical in still air. Rev 2.0 page 2 2013-04-04

Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 199 265 pF Output capacitance C oss - 36 48 Reverse transfer capacitance Crss - 14 21 Turn-on delay time t d(on) - 4.6 6.9 ns Rise time t r - 5.9 8.91 Turn-off delay time t d(off) - 21.9 32.9 Fall time t f - 13.5 20.3 Gate Charge Characteristics Gate to source charge Q gs - 0.8 1.2 nC Gate to drain charge Q gd - 2.7 4.0 Gate charge total Q g - 6.2 9.3 Gate plateau voltage V plateau - 4.1 - V Reverse Diode Diode continous forward current I S - - 1.8 A Diode pulse current I S,pulse - - 7.3 Diode forward voltage V SD V GS=0 V, I F=1.8 A, T j=25 °C - 0.82 1.1 V Reverse recovery time t rr - 33 49.5 ns Reverse recovery charge Q rr - 46 69 nC V R=50 V, I F=1.8 A, di F/dt =100 A/µs T A=25 °C Values V GS=0 V, V DS=25 V, f =1 MHz V DD=50 V, V GS=10 V, I D=1.8 A, R G=6 W V DD=50 V, I D=1.8 A, V GS=0 to 10 V Rev 2.0 page 3 2013-04-04

1 Power dissipation 2 Drain current

P tot=f(T A) I D=f(T A); V GS≥10 V 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10-4 10-3 10-2 10-1 100 101 102 100 101 102 ZthJA [K/W] tp [s] 0.5 1.5 0 40 80 120 160 Ptot [W] TA [°C] 0.5 1.5 0 40 80 120 160 ID [A] TA [°C] 1 µs 10 µs 100 µs 1 ms 10 ms DC 10-1 100 101 102 103 10-3 10-2 10-1 100 101 ID [A] VDS [V] Rev 2.0 page 4 2013-04-04

5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 0 1 2 3 4 5 6 7 gfs [S] ID [A] 25 °C 150 °C 0 1 2 3 4 5 6 ID [A] VGS [V] 5 V 5.5 V 6 V 10 V 100 200 300 400 500 600 700 800 0 1 2 3 4 5 6 7 RDS(on) [mW] ID [A] 4 V 4.5 V 5 V 5.5 V

6 V 10 V

ID [A] VDS [V] Rev 2.0 page 5 2013-04-04

9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=1.8 A; V GS=10 V V GS(th)=f(T j); V DS=VGS; I D=218 µA parameter: I D 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C I F=f(V SD) parameter: T j typ max 100 200 300 400 500 600 -60 -20 20 60 100 140 RDS(on) [mW] Tj [°C] -60 -10 40 90 140 VGS(th) [V] Tj [°C] Ciss Coss Crss 100 101 102 103 0 10 20 30 40 50 60 70 80 90 100 C [pF] VDS [V] 25 °C 150 °C 25 °C, 98% 150 °C, 98% 10-2 10-1 100 101 IF [A] VSD [V] typ max min Rev 2.0 page 6 2013-04-04

13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=1.8 A pulsed parameter: T j(start) parameter: V DD

15 Drain-source breakdown voltage 16 Gate charge waveforms

V BR(DSS)=f(T j); I D=250 µA 100 104 108 112 116 120 -60 -20 20 60 100 140 180 VBR(DSS) [V] Tj [°C] 20 V 50 V 80 V 0 1 2 3 4 5 6 7 VGS [V] Qgate [nC] 25 °C 100 °C 125 °C 100 101 102 103 10-1 100 101 IAV [A] tAV [µs] V GS Q gate V gs(th) Q g(th) Q gs Q gd Q sw Q g Rev 2.0 page 7 2013-04-04

Package Outline: V DD=50 V, V GS=10 V, I D=1.8 A, R G=6 W Footprint: Packaging: Dimensions in mm Rev 2.0 page 8 2013-04-04

81726 Munich, Germany

© 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee ofV DD=50 V, V GS=10 V, I D=1.8 A, R G=6 W conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 2.0 page 9 2013-04-04