BSP372

BSP372_08 INFINEON | Alldatasheet

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Technical content

SIPMOS ® Small-Signal Transistor

• N channel  Enhancement mode  Logic Level  Avalanche rated Pin 1 Pin 2 Pin 3 Pin 4 G D S D Type VDS ID R DS(on) Package BSP372 100 V 1.7 A 0.31Ω PG-SOT223 Type Tape and Reel Information BSP372 L6327: 1000 pcs/reel Maximum Ratings Parameter Symbol Values Unit Continuous drain current TA = 28 ˚C ID 1.7 A DC drain current, pulsed TA = 25 ˚C IDpuls 6.8 Avalanche energy, single pulse ID = 1.7 A, VDD = 25 V, R GS = 25 Ω L = 23.3 mH, Tj = 25 ˚C E AS mJ Gate source voltage V GS ± 14 V Gate-source peak voltage,aperiodic V gs ± 20 Power dissipation TA = 25 ˚C P tot 1.8 W Pb-free lead plating; RoHS compliant• Marking BSP372 Packaging Non dry  Qualified according to AEC Q101 B SP372 Rev 2.0 1 2008-03-31

Rev 2.0 2 2008-03-31 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Tj -55 ... + 150 ˚C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air 1) R thJA ≤ 70 K/W Thermal resistance, junction-soldering point 1) R thJS ≤ 10 IEC climatic category, DIN IEC 68-1 55 / 150 / 56 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, atTj= 25˚C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage V GS = 0 V, ID = 0.25 mA, Tj = 0 ˚C V (BR)DSS 100 - - V Gate threshold voltage V GS =V DS, ID = 1 mA V GS(th) 0.8 1.4 2 Zero gate voltage drain current V DS = 100 V, V GS = 0 V, Tj = 25 ˚C V DS = 100 V, V GS = 0 V, Tj = 125 ˚C IDSS 0.1 100 µA Gate-source leakage current V GS = 20 V, VDS = 0 V IGSS - 10 100 nA Drain-Source on-state resistance V GS = 5 V, ID = 1.7 A R DS(on) - 0.24 0.31 Ω

Rev 2.0 3 2008-03-31 Electrical Characteristics, atTj= 25˚C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Transconductance V DS ≥ 2 *ID * RDS(on)max,ID = 1.7 A gfs 2 3.7 - S Input capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz C iss - 415 520 pF Output capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz C oss - 80 100 Reverse transfer capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz C rss - 50 65 Turn-on delay time V DD = 30 V, VGS = 5 V, ID = 0.3 A R G = 50 Ω td(on) - 20 30 ns Rise time V DD = 30 V, VGS = 5 V, ID = 0.3 A R G = 50 Ω tr - 35 55 Turn-off delay time V DD = 30 V, VGS = 5 V, ID = 0.3 A R G = 50 Ω td(off) - 110 165 Fall time V DD = 30 V, VGS = 5 V, ID = 0.3 A R G = 50 Ω tf - 50 75

Rev 2.0 4 2008-03-31 Electrical Characteristics, atTj= 25˚C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Reverse Diode Inverse diode continuous forward current TA = 25 ˚C IS - - 1.7 A Inverse diode direct current,pulsed TA = 25 ˚C ISM - - 6.8 Inverse diode forward voltage V GS = 0 V, IF = 1.7 A V SD - 0.85 1.1 V Reverse recovery time V R = 30 V, IF=lS,diF/dt = 100 A/µs trr - 65 - ns Reverse recovery charge V R = 30 V, IF=lS,diF/dt = 100 A/µs Q rr - 0.11 - µC

Rev 2.0 5 2008-03-31 Power dissipation Ptot = ƒ(TA) 0 20 40 60 80 100 120 ˚C 160 TA 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 W 2.0 Ptot Drain current ID = ƒ(TA) parameter:VGS ≥ 5 V 0 20 40 60 80 100 120 ˚C 160 TA 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 A 1.8 ID Safe operating areaID=f(VDS ) parameter : D = 0, TC=25˚C Transient thermal impedance Zth JA = ƒ(tp) parameter:D = tp / T -510 -410 -310 -210 -110 010 110 210 K/W ZthJA s tp single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

Rev 2.0 6 2008-03-31 Typ. output characteristics ID = ƒ(VDS ) parameter:tp = 80 µs VDS 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 A 3.8 ID VGS [V] a a 2.0 b b 2.5 c c 3.0 d d 3.5 e e 4.0 f f 4.5 g g 5.0 h h 6.0 i i 7.0 j j 8.0 k k 9.0 l P tot = 2W l 10.0 Typ. drain-source on-resistance R DS (on) = ƒ(ID ) parameter:tp = 80 µs, Tj = 25 ˚C ID 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Ω 1.0 R DS (on) VGS [V] = a 2.0 VGS [V] = a a 2.5 b b 3.0 c c 3.5 d d 4.0 e e 4.5 f f 5.0 g g 6.0 h h 7.0 i i 8.0 j j 9.0 k k 10.0 Typ. transfer characteristics ID = f(VGS ) parameter:tp = 80 µs VDS ≥ 2 x ID x R DS(on)max 0 1 2 3 4 5 6 7 8 V 10 VGS 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 A 6.5 ID Typ. forward transconductancegfs = f (ID ) parameter:tp = 80 µs, V DS ≥2 x ID x R DS(on)max ID 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 S 6.5 gfs

Rev 2.0 7 2008-03-31 Drain-source on-resistance R DS (on) = ƒ(Tj) parameter:ID = 1.7 A, VGS = 5 V -60 -20 20 60 100 ˚C 160 Tj 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Ω 1.0 R DS (on) typ 98% Gate threshold voltage VGS (th) = ƒ(Tj) parameter:VGS = VDS ,ID = 1 mA 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 V 4.6 V GS(th) -60 -20 20 60 100 ˚C 160 Tj typ 98% Typ. capacitances C = f (VDS ) parameter:V GS =0V,f= 1 MHz 0 5 10 15 20 25 30 V 40 VDS 110 210 310 410 pF C C iss C oss C rss Forward characteristics of reverse diode IF = ƒ(VSD ) parameter:Tj, tp = 80 µs -210 -110 010 110 A IF VSD Tj = 25 ˚C typ Tj = 25 ˚C (98%) Tj = 150 ˚C typ Tj = 150 ˚C (98%)

Rev 2.0 8 2008-03-31 Avalanche energy EAS = ƒ(Tj) parameter:ID = 1.7 A, VDD = 25 V R GS = 25 Ω,L = 23.3 mH 20 40 60 80 100 120 ˚C 160 Tj mJ E AS Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) -60 -20 20 60 100 ˚C 160 Tj 100 102 104 106 108 110 112 114 116 V 120 V (BR)DSS Safe operating areaID=f(VDS ) parameter : D = 0.01, TC=25˚C

R ev 2.0 9 2008-03-31