BSP350 SIEMENS | Alldatasheet
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Technical content
Mini PROFET ® BSP 350 Semiconductor Group 1 04.97 MiniPROFET
- High-side switch
- Short-circuit protection
- Overtemperature protection with hysteresis
- Overload protection
- Overvoltage protection
- Reverse battery protection1)
- Switching inductive load
- Clamp of negative output voltage with inductive loads
- Maximum current internally limited Package: SOT 223 Type Ordering code BSP 350 Q67000-S227 Maximum Ratings Parameter Symbol Values Unit Supply voltage Vbb 50 V Load current self-limited IL IL(SC ) A Maximum current through input pin (DC) see internal circuit diagram IIN ±15 mA Inductive load switch-off energy dissipation EAS 5m J Operating temperature range Storage temperature range Tj Tstg -40 ...+150 -55 ...+150 Max. power dissipation (DC)2) TA = 25 °C Ptot 1.7 W Thermal resistance chip - soldering point: chip - ambient:2) R thJS R thJA K/W + Vbb GND Control Circuit R Temperature Sensor OUT IN R L IN 1) For 12 V applications only. Reverse load current only limited by connected load. 2) BSP 350 on epoxy pcb 40 mm x 40 mm x 1.5 mm with 6 cm2 copper area for Vbb connection Pins: 12 3 4 IN V bb OUT V bb
Electrical Characteristics
Parameter and Conditions Symbol Values Unit at Tj = 25 °C, Vbb = 13.5V unless otherwise specified min typ max Load Switching Capabilities and Characteristics On-state resistance (pin 2 to 3) IL = 0.07 A, pin 1 = GND Tj = 25°C Tj = 150°C Vbb = 6 V, Tj = 25°C R ON -- Ω Nominal load current (pin 2 to 3) ISO Standard: VON = Vbb - VOUT = 0.5 V TS = 85 °C IL(ISO) 0.07 -- -- A Turn-on time to 90% VOUT Turn-off time to 10% VOUT RL = 270 Ω ton toff 100 140 µs Slew rate on 10 to 30% VOUT , R L = 270 Ω dV /dton -- 4 6 V/ µs Slew rate off 70 to 40% VOUT , R L = 270 Ω -dV/dtoff -- 2 6 Input OFF state input current Tj = - 40...+150°C R L = 270 Ω, VOUT ≤ 0,1V IIN(off) -- -- 0.05 mA ON state input current, (pin 1 grounded)3) Tj = - 40...+150°C IIN(on) -- 0.3 1 mA Operating Parameters Operating voltage (pin 1 grounded)4) Tj = - 40...+150°C Vbb(on) 4.9 -- 45 V Leakage current (pin 2 to 3, pin 1 open)Tj = 25°C Tj =150°C Ibb(off) -- 1.2 µA 3) Driver circuit must be capable to drive currents >1mA. 4) Below Vbb=4.5 V typ. without chargepump, Vout ≈ Vbb - 2 V
Parameter and Conditions Symbol Values Unit at Tj = 25 °C, Vbb = 13.5V unless otherwise specified min typ max Protection Functions Current limit (pin 2 to 3)5) Tj = 25°C Tj = -40...+150° IL(SC) 0.2 0.1 0.5 1.2 A Thermal overload trip temperature Tjt 150 -- -- °C Thermal hysteresis ΔTjt -- 20 -- K Overvoltage protection Tj =-40...+150°CVbbin(AZ) 50 56 -- V Output clamp (ind. load switch off) at VOUT = Vbb - VON(CL) VON(CL) -- 56 -- V Inductive load switch-off energy dissipation6) EAS -- -- 5m J Reverse battery resistor (pin 1 to 2) R IN -- 1 -- k Ω Reverse Diode Continious reverse drain current Tj = 25°C IS -- -- 0.2 A Pulsed reverse drain current Tj = 25°C ISM -- -- 0.8 A Diode forward on voltage IF = 0.2 A, IIN = ≤ 0.05 mA VSD -- 0.9 1.2 V 5) load current limits onset at IL * Ron approx. 1V short circuit protection: combination of current limit and thermal overload switch off 6) while demagnetizing load inductance, dissipated energy is EAS = ∫(VON(CL) * iL(t) dt, approx. EAS = 1/2 * L * I2 L * ( VON(CL) VON(CL)-Vbb
Max allowable power dissipation Ptot = f (TA ,TSP ) Ptot [W] 0 25 50 75 100 125 150 T A SP T TA, TSP [°C] On state resistance (Vbb- pin to OUT pin) R ON = f (Tj);Vbb = 13.5 V;IL = 70 mA R ON [Ω ] - 5 0 - 2 50 2 55 07 5 1 0 0 1 2 5 1 5 0 typ 98% TJ [°C] Typ. on state resistance (Vbb- pin to OUT pin) R ON = f (Vbb); IL = 70 mA; Tj = 25°C R ON [Ω ] 0 5 10 15 20 25 Vbb [V] Typ. short circuit current IL(SC) = f(Tj); Vbb = 13.5V ILSC [Α ] 0.1 0.2 0.3 0.4 0.5 0.6 0.7 - 5 0 - 2 50 2 55 07 5 1 0 0 1 2 5 1 5 0 TJ [°C]
Typ. short circuit current IL(SC) = f(VON ); Vbb = 13.5V; Tj = 25°C ILSC [Α ] 0.1 0.2 0.3 0.4 0.5 0.6 0.7 02468 VON [V] Typ. short circuit current IL(SC) = f(t); Vbb = 13.5V no heatsink; Parameter: TjStart IL(SC)[mA] 200 400 600 800 1000 -40°C25°C125°C t[s] Test circuit /G56 /G56 /G69/G6E /G56 /G62/G62 /G49 /G69/G6E /G32/G2F/G34 /G31 /G33 /G6F/G75/G74 /G56 /G6F/G6E Turn on conditions Chargepump threshold VON = f (Vbb) typ. max. 2 4 6 8
Package: all dimensions in mm. SOT 223/3: