BSP33

BSP31 ZETEX | Alldatasheet

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ISSUE 3 – FEBRUARY 1996 COMPLEMENTARY TYPE – BSP31 – BSP41 BSP33 – BSP43 PARTMARKING DETAIL – Device type in full ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL BSP31 BSP33 UNIT Collector-Base Voltage V CBO -70 -90 V Collector-Emitter Voltage V CEO -60 -80 V Emitter-Base Voltage V EBO -5 V Peak Pulse Current I CM -2 A Continuous Collector Current I C -1 A Power Dissipation at Tamb =25°C P TOT 2W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Collector-Base BSP31 Breakdown Voltage BSP33 V(BR)CBO -70 -90 V V IC=-100µA IC=-100µA Collector-Emitter BSP31 Breakdown Voltage BSP33 V(BR)CEO -60 -80 VI C=-10mA IC=-10mA Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-10µA Collector Cut-Off Current I CBO -100 -50 nA µA VCB=-60V VCB=-60V, Tamb=125°C Collector-Emitter Saturation Voltage VCE(sat) -0.25 -0.5 V V IC =-150mA, IB=-15mA IC =-500mA, IB=-50mA Base-Emitter Saturation Voltage VBE(sat) -1.0 -1.2 V V IC=-150mA, IB=-15mA IC =-500mA, IB=-50mA Static Forward Current Transfer Ratio hFE 30 100 300 I C =-100µA, VCE =-5V IC =-100mA, VCE =-5V IC =-500mA, VCE =-5V Collector Capacitance C c 20 pF V CB =-10V, f =1MHz Emitter Capacitance C e 120 pF V EB =-0.5V, f =1MHz Transition Frequency f T 100 MHz I C=-50mA, VCE=-10V f =35MHz Turn-On Time T on 500 ns V CC =-20V, IC =-100mA IB1 =-IB2 =-5mATurn-Off Time T off 650 ns *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device BSP31 BSP33 C C E B 3 - 62