BSP324L6327 INFINEON | Alldatasheet
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Technical content
Rev. 2.1 BSP324 SIPMOS Power-Transistor Product Summary VDS 400 V RDS(on) 25 Ω ID 0.17 A Feature
- N-Channel
- Enhancement mode
- Logic Level
- dv/dt rated SOT-223 Marking BSP324 Type Package Pb-free Tape and Reel Information BSP324 PG-SOT223 Yes L6327: 1000 pcs/reel Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current TA=25°C TA=70°C ID 0.17 0.14 A Pulsed drain current TA=25°C ID puls 0.68 Reverse diode dv/dt IS=0.17A, VDS=320V, di/dt=200A/µs, Tjmax=175°C dv/dt 6 kV/µs Gate source voltage VGS ±20 V ESD Class (JESD22-A114-HBM) 1A (>250V, <500V) Power dissipation TA=25°C Ptot 1.8 W Operating and storage temperature Tj , Tstg -55... +150 °C IEC climatic category; DIN IEC 68-1 55/150/56
- Pb-free lead plating; RoHS compliant x Qualified according to AEC Q101 Non dry Packaging
Rev. 2.1 BSP324 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - soldering point (Pin 4) RthJS - 16 25 K/W SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) RthJA 115 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage VGS=0, ID=250µA V(BR)DSS 400 - - V Gate threshold voltage, VGS = VDS ID=94µA VGS(th) 1.3 1.9 2.3 Zero gate voltage drain current VDS=400V, VGS=0, Tj=25°C VDS=400V, VGS=0, Tj=125°C IDSS 0.01 0.1 µA Gate-source leakage current VGS=20V, VDS=0 IGSS - 10 100 nA Drain-source on-state resistance VGS=4.5V, ID=0.05A RDS(on) - 14.3 22 Ω Drain-source on-state resistance VGS=10V, ID=0.17A RDS(on) - 13.6 25 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (single layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.
Rev. 2.1 BSP324 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs VDS≥2*ID*RDS(on)max, ID=0.14A 0.09 0.19 - S Input capacitance Ciss VGS=0, VDS=25V, f=1MHz - 103 154 pF Output capacitance Coss - 9.2 13.6 Reverse transfer capacitance Crss - 3.8 5.7 Turn-on delay time td(on) VDD=225V, VGS=10V, ID=0.17A, RG=6Ω - 4.6 6.9 ns Rise time tr - 4.4 6.6 Turn-off delay time td(off) - 17 25 Fall time tf - 68 102 Gate Charge Characteristics Gate to source charge Qgs VDD =320V, ID=0.17A - 0.35 0.45 nC Gate to drain charge Qgd - 2.17 2.82 Gate charge total Qg VDD =320V, ID=0.17A, VGS=0 to 10V - 4.54 5.9 Gate plateau voltage V(plateau) VDD =320V, ID=0.17A - 3.6 - V Reverse Diode Inverse diode continuous forward current IS TA=25°C - - 0.17 A Inv. diode direct current, pulsed ISM - - 0.68 Inverse diode forward voltage VSD VGS=0, IF=0.17A - 0.8 1.2 V Reverse recovery time trr VR=200V, IF=lS, diF/dt=100A/µs - 85 127 ns Reverse recovery charge Qrr - 104 156 nC
Rev. 2.1 BSP324
1 Power dissipation
Ptot = f (TA) 0 20 40 60 80 100 120 °C 160 TA 0.2 0.4 0.6 0.8 1.2 1.4 1.6 W 1.9 BSP324 Ptot
2 Drain current
I D = f (TA) parameter: VGS≥ 10 V 0 20 40 60 80 100 120 °C 160 TA 0.02 0.04 0.06 0.08 0.1 0.12 0.14 A 0.18 BSP324 ID
3 Safe operating area
I D = f ( VDS ) parameter : D = 0 , TA = 25 °C VDS -310 -210 -110 010 110 A BSP324 ID RDS(on) = VDS / ID DC 10 ms 1 ms tp = 170.0µs
4 Transient thermal impedance
Z thJA = f (tp) parameter : D = tp/T tp -210 -110 010 110 210 K/W BSP324 ZthJA single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50
Rev. 2.1 BSP324 5 Typ. output characteristic ID = f (VDS) parameter: Tj = 25 °C, VGS 0 1 2 3 4 5 6 7 8 10 0.1 0.2 0.3 0.4 0.6 10V 4.5V 4.3V 4.1V 3.9V 3.7V 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: Tj = 25 °C, VGS ID Ω R DS(on) 3.7V 3.9V 4.1V 4.3V 4.5V 10V 7 Typ. transfer characteristics ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: Tj = 25 °C 0 1 2 3 V 5 VGS 0.05 0.1 0.15 0.2 0.25 A 0.35 ID 8 Typ. forward transconductance g fs = f(ID) parameter: Tj = 25 °C ID 0.04 0.08 0.12 0.16 0.2 0.24 0.28 S 0.36 gfs
Rev. 2.1 BSP324
9 Drain-source on-state resistance
RDS(on) = f (Tj) parameter : ID = 0.17 A, VGS = 10 V -60 -20 20 60 100 °C 180 Tj 100 110 Ω 130 BSP324 R DS(on) typ 98% 10 Typ. gate threshold voltage V GS(th) = f (Tj) parameter: VGS = VDS; ID =94µA -60 -20 20 60 100 °C 160 Tj 0.6 0.8 1.2 1.4 1.6 1.8 2.2 V 2.6 - VGS(th) typ. 98% 11 Typ. capacitances C = f (V DS) parameter: VGS=0, f=1 MHz, Tj = 25 °C 0 5 10 15 20 V 30 VDS 010 110 210 310 pF C Crss Coss Ciss 12 Forward character. of reverse diode I F = f (VSD) parameter: Tj VSD -310 -210 -110 010 A BSP324 IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%)
Rev. 2.1 BSP324 13 Typ. gate charge VGS = f (QG); parameter: VDS , ID = 0.17 A pulsed, Tj = 25 °C 0 1 2 3 4 5 nC 7 QG V BSP324 VGS
0.2 VDS max
0.5 VDS max
0.8 VDS max
14 Drain-source breakdown voltage
V (BR)DSS = f (Tj) -60 -20 20 60 100 °C 180 Tj 360 370 380 390 400 410 420 430 440 450 460 470 V 490 BSP324 V(BR)DSS
BSP324Rev 2.1