BSP324

BSP324 SIEMENS | Alldatasheet

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Semiconductor Group 1 Sep-12-1996 BSP 324 SIPMOS ® Small-Signal Transistor

• N channel
• Enhancement mode Pin 1 Pin 2 Pin 3 Pin 4 G D S D Type VDS ID R DS(on) Package Marking BSP 324 400 V 0.17 A 25 Ω SOT-223 BSP 324 Type Ordering Code Tape and Reel Information BSP 324 Q67000-S215 E6327 Maximum Ratings Parameter Symbol Values Unit Drain source voltage VDS 400 V Drain-gate voltage R GS = 20 kΩ VDGR 400 Gate source voltage VGS ± 14 Gate-source peak voltage,aperiodic Vgs ± 20 Continuous drain current TA = 33 °C ID 0.17 A DC drain current, pulsed TA = 25 °C IDpuls 0.68 Power dissipation TA = 25 °C Ptot 1.7 W

Semiconductor Group 2 Sep-12-1996 BSP 324 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Tj -55 ... + 150°C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air R thJA ≤ 72 K/W Therminal resistance, junction-soldering point 1) R thJS ≤ 12 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 25 °C V(BR)DSS 400 - - V Gate threshold voltage VGS =VDS, ID = 1 mA VGS(th) 1.5 2 2.5 Zero gate voltage drain current VDS = 400 V, VGS = 0 V, Tj = 25 °C VDS = 400 V, VGS = 0 V, Tj = 125 °C IDSS 100 nA µA Gate-source leakage current VGS = 20 V, VDS = 0 V IGSS - 10 100 nA Drain-Source on-state resistance VGS = 10 V, ID = 0.17 A R DS(on) - 20 25 Ω

Semiconductor Group 3 Sep-12-1996 BSP 324 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Transconductance VDS ≥ 2 * ID * RDS(on)max, ID = 0.17 A gfs 0.1 0.17 - S Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz C iss - 90 120 pF Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz C oss - 10 15 Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz C rss - 4 6 Turn-on delay time VDD = 30 V, VGS = 10 V, ID = 0.21 A R GS = 50 Ω td(on) - 5 8 ns Rise time VDD = 30 V, VGS = 10 V, ID = 0.21 A R GS = 50 Ω tr - 10 15 Turn-off delay time VDD = 30 V, VGS = 10 V, ID = 0.21 A R GS = 50 Ω td(off) - 18 25 Fall time VDD = 30 V, VGS = 10 V, ID = 0.21 A R GS = 50 Ω tf - 15 20

Semiconductor Group 4 Sep-12-1996 BSP 324 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Reverse Diode Inverse diode continuous forward current TA = 25 °C IS - - 0.17 A Inverse diode direct current,pulsed TA = 25 °C ISM - - 0.68 Inverse diode forward voltage VGS = 0 V, IF = 0.34 A, Tj = 25 °C VSD - 0.85 1.3 V Reverse recovery time VR = 30 V, IF=lS, diF/dt = 100 A/µs trr - 300 - ns Reverse recovery charge VR = 30 V, IF=lS, diF/dt = 100 A/µs Q rr - 0.82 - µC

Semiconductor Group 5 Sep-12-1996 BSP 324 Power dissipation Ptot = ƒ(TA) 0 20 40 60 80 100 120 °C 160 TA 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 W 2.0 Ptot Drain current ID = ƒ(TA) parameter: VGS ≥ 10 V 0 20 40 60 80 100 120 °C 160 TA 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 A 0.18 ID Safe operating area ID =f(VDS ) parameter : D = 0, TC =25°C Transient thermal impedance Zth JA = ƒ(tp) parameter: D = tp / T -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 K/W ZthJC 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s tp single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

Semiconductor Group 6 Sep-12-1996 BSP 324 Typ. output characteristics ID = ƒ(VDS ) parameter: tp = 80 µs , Tj = 25 °C 0 4 8 12 16 V 22 VDS 0.00 0.04 0.08 0.12 0.16 0.20 0.24 0.28 0.32 A 0.38 ID VGS [V] a a 2.5 b b 3.0 c c 3.5 d d 4.0 e e 4.5 f f 5.0 g g 5.5 h h 6.0 i i 7.0 j j 8.0 k k 9.0 lP tot = 2W l 10.0 Typ. drain-source on-resistance R DS (on) = ƒ(ID ) parameter: tp = 80 µs, Tj = 25 °C ID Ω R DS (on) VGS [V] = a 2.5 VGS [V] = a a 3.0 b b 3.5 c c 4.0 d d 4.5 e e 5.0 f f 5.5 g g 6.0 h h 7.0 i i 8.0 j j 9.0 k k 10.0 Typ. transfer characteristics ID = f(VGS ) parameter: tp = 80 µs 0 1 2 3 4 5 6 7 8 V 10 V GS 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 A 0.45 ID Typ. forward transconductance gfs = f (ID ) parameter: tp = 80 µs, ID 0.00 0.05 0.10 0.15 S 0.25 gfs

7 Sep-12-1996Semiconductor Group

Drain-source on-resistance R DS (on) = ƒ(Tj) parameter: ID = 0.17 A, VGS = 10 V -60 -20 20 60 100 °C 160 Tj Ω 100 R DS (on) typ 98% Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS , ID = 1 mA 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 V 4.6 V GS(th) -60 -20 20 60 100 °C 160 Tj typ 98% Typ. capacitances C = f (VDS ) parameter:VGS =0V, f = 1 MHz 0 5 10 15 20 25 30 V 40 V DS 0 10 1 10 2 10 3 10 pF C C iss C rss C oss Forward characteristics of reverse diode IF = ƒ(VSD ) parameter: Tj, tp = 80 µs -3 10 -2 10 -1 10 0 10 A IF VSD Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%)

Semiconductor Group 8 Sep-12-1996 BSP 324 Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) -60 -20 20 60 100 °C 160 Tj 360 370 380 390 400 410 420 430 440 450 460 V 480 V(BR)DSS Safe operating area ID =f(VDS ) parameter : D = 0.01, TC =25°C

Semiconductor Group 9 Sep-12-1996 BSP 324 Package outlines SOT-223 Dimensions in mm