BSP322P_11 INFINEON | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 9

Technical content

Features

  • P-Channel
  • Enhancement mode
  • Logic level
  • Avalanche rated
  • Pb-free lead plating; RoHS compliant
  • Qualified according to AEC Q101 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T C=25 °C A T C=70 °C Pulsed drain current I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=-1 A, R GS=25 Ω mJ Gate source voltage V GS V Power dissipation P tot T C=25 °C W Operating and storage temperature T j, T stg °C ESD Class JESD22-A114-HBM Soldering temperature IEC climatic category; DIN IEC 68-1 0.8 1.8 Value 55/150/56 -55 ... 150 ±20 260 °C 1A (250V to 500V) V DS -100 V R DS(on),max 800 mΩ I D -1 A Product Summary PG-SOT-223 Type Package Tape and Reel Information Marking Lead free Packing BSP322P PG-SOT-223 L6327: 1000 pcs/reel BSP322P Yes Non dry Rev 1.04 page 1 2011-04-05

Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - ambient R thJA minimal footprint, steady state - - 115 K/W 6 cm2 cooling area1), steady state -- 7 0 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=-250 μA -100 - - V Gate threshold voltage V GS(th) V DS=V GS,I D=-380 µA -2.0 -1.5 -1.0 Zero gate voltage drain current I DSS V DS=-100 V, V GS=0 V, V DS=-100 V, V GS=0 V, T j=150 °C - -10 -100 Gate-source leakage current I GSS V GS=-20 V, V DS=0 V - -10 -100 nA Drain-source on-state resistance R DS(on) V GS=-10 V, I D=-1 A - 600 800 mΩ V GS=-4.5 V, I D=-0.93 A - 808 1000 Transconductance g fs |V DS|>2|I D|R DS(on)max, 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Values Rev 1.04 page 2 2011-04-05

Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 280 372 pF Output capacitance C oss -7 0 9 4 Reverse transfer capacitance C rss -3 4 5 1 Turn-on delay time t d(on) - 4.6 6.9 ns Rise time t r - 4.3 6.5 Turn-off delay time t d(off) - 21.2 31.8 Fall time t f - 8.3 12.5 Gate Charge Characteristics2) Gate to source charge Q gs - 0.8 1.0 nC Gate to drain charge Q gd - 4.3 6.4 Gate charge total Q g - 12.4 16.5 Gate plateau voltage V plateau - 2.9 - V Reverse Diode Diode continuous forward current I S - - -1.0 A Diode pulse current I S,pulse - - -4.0 Diode forward voltage V SD V GS=0 V, I F=-1 A, T j=25 °C - 0.84 1.2 V Reverse recovery time t rr -4 7- n s Reverse recovery charge Q rr -8 4- n C 2) See figure 16 for gate charge parameter definition T C=25 °C Values V GS=0 V, V DS=-25 V, f =1 MHz V DD=-50 V, V GS=-

10 V, I D=-1 A, R G=6 Ω

V DD=-80 V, I D=-1 A, V GS=0 to -10 V V R=50 V, I F=|I S|, di F/dt =100 A/µs Rev 1.04 page 3 2011-04-05

1 Power dissipation 2 Drain current

P tot=f(T C) I D=f(T C); |V GS|≥10 V 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 100 µs 1 ms 10 ms 100 ms DC 103102101100 101 100 10-1 10-2 -V DS [V] -I D [A] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10210110010-110-210-310-410-5 102 101 100 10-1 t p [s] Z thJS [K/W] 0.5 1.5 0 40 80 120 160 T A [°C] P tot [W] 0.2 0.4 0.6 0.8 1.2 0 40 80 120 160 T A [°C] -I D [A] Rev 1.04 page 4 2011-04-05

5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j -3 V -3.5 V -4 V -5 V -7 V -10 V 0.2 0.4 0.6 0.8 1.2 1.4 1.6 01234 -I D [A] R DS(on) [Ω] 25 °C 125 °C 012345 -V GS [V] -I D [A] 01234 -I D [A] g fs [S] -3 V -3.5 V -4 V -5 V -7 V -10 V 02468 1 0 -V DS [V] -I D [A] Rev 1.04 page 5 2011-04-05

9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=-1 A; V GS=-10 V V GS(th)=f(T j); V GS=V DS; I D=-380 µA 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j typ. 98 % 0.5 1.5 -60 -20 20 60 100 140 T j [°C] R DS(on) [Ω] Ciss Coss Crss 103 102 101 0 2 04 06 08 0 1 0 0 -V DS [V] C [pF] typ. min. max. -60 -20 20 60 100 140 180 T j [°C] -V GS(th) [V] 25 °C, typ 150 °C, typ 25 °C, 98% 150 °C, 98% 0.01 0.1 0 0.5 1 1.5 -V SD [V] I F [A] Rev 1.04 page 6 2011-04-05

13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=-1 A pulsed parameter: T j(start) parameter: V DD

15 Drain-source breakdown voltage 16 Gate charge waveforms

V BR(DSS)=f(T j); I D=-250 µA 100 105 110 115 120 -60 -20 20 60 100 140 180 T j [°C] -V BR(DSS) [V] V GS Q gate V gs(t h ) Q g(th) Q gs Q gd Q sw Q g 25 °C 100 °C 125 °C 0.1 1 10 100 1000 t AV [µs] -I AV [A] 20 V 50 V 80 V 0 5 10 15 - Qgate [nC] - VGS [V] Rev 1.04 page 7 2011-04-05

Package Outline: PG-SOT-223 Footprint: Packaging: Dimensions in mm Rev 1.04 page 8 2011-04-05

81726 Munich, Germany

© 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 1.04 page 9 2011-04-05