BSP320

BSP320S SIEMENS | Alldatasheet

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Semiconductor Group 1 29/01/1998 BSP 320 S SIPMOS ® Small-Signal Transistor

• N channel
• Enhancement mode
• Avalanche rated Pin 1 Pin 2 Pin 3 Pin 4 G D S D Type VDS ID RDS(on) Package Marking Ordering Code BSP 320 S 60 V 2.9 A 0.12 Ω SOT-223 Q67000-S4001 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TA = 25 °C TA = 100 °C ID 1.85 2.9 A DC drain current, pulsed TA = 25 °C IDpuls 11.6 Avalanche energy, single pulse ID = 2.9 A, VDD = 25 V, RGS = 25 Ω L = 14.3 mH, Tj = 25 °C EAS mJ Avalanche energy, periodic limited by Tj(max) EAR 0.18 Avalanche current, repetitive,limited by Tj(max) IAR 2.9 A Reverse diode dv/dt IS = 2.9 A, VDS = 40 V, di/dt = 200 A/µs Tjmax = 150 °C dv/dt KV/µs Gate source voltage VGS ± 20 V Power dissipation TA = 25 °C Ptot 1.8 W

Semiconductor Group 2 29/01/1998 BSP 320 S Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Tj -55 ... + 150 °C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air 1) RthJA ≤ 70 K/W Thermal resistance, junction-soldering point 1) RthJS 17 IEC climatic category, DIN IEC 68-1 55 / 150 / 56 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection *) MIL STD 883, Method 3015, Class 2 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 25 °C V(BR)DSS 60 - - V Gate threshold voltage VGS=VDS, ID = 20 µA VGS(th) 2.1 3 4 Zero gate voltage drain current VDS = 60 V, VGS = 0 V, Tj = -40 °C VDS = 60 V, VGS = 0 V, Tj = 25 °C VDS = 60 V, VGS = 0 V, Tj = 125 °C IDSS 0.1 100 0.1 µA Gate-source leakage current VGS = 20 V, VDS = 0 V IGSS - 10 100 nA Drain-Source on-state resistance VGS = 10 V, ID = 2.9 A RDS(on) - 0.09 0.12 Ω

Semiconductor Group 3 29/01/1998 BSP 320 S Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Transconductance VDS≥ 2 * ID * RDS(on)max, ID = 2.9 A gfs 2.5 - - S Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Ciss - 275 340 pF Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Coss - 90 120 Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Crss - 50 65 Turn-on delay time VDD = 30 V, VGS = 10 V, ID = 2.9 A RG = 33 Ω td(on) - 11 17 ns Rise time VDD = 30 V, VGS = 10 V, ID = 2.9 A RG = 33 Ω tr - 25 40 Turn-off delay time VDD = 30 V, VGS = 10 V, ID = 2.9 A RG = 33 Ω td(off) - 25 40 Fall time VDD = 30 V, VGS = 10 V, ID = 2.9 A RG = 33 Ω tf - 35 55 Gate charge at threshold VDD = 40 V, ID = 0.1 A, VGS 0 to 1 V Qg(th) - 0.24 0.3 nC Gate Charge at 7.0 V VDD = 40 V, ID = 2.9 A, VGS 0 to 7 V Qg(7) - 7.4 9.3 Gate Charge total VDD = 40 V, ID = 2.9 A, VGS 0 to 10 V Qg(total) - 9.7 12 Gate plateau voltage VDS = 15 V, ID = 2.9 A V(plateau) - 4.7 - V

Semiconductor Group 4 29/01/1998 BSP 320 S Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Reverse Diode Inverse diode continuous forward current TA = 25 °C IS - - 2.9 A Inverse diode direct current,pulsed TA = 25 °C ISM - - 11.6 Inverse diode forward voltage VGS = 0 V, IF = 5.8 A VSD - 0.94 1.2 V Reverse recovery time VR = 30 V, IF=lS, diF/dt = 100 A/µs trr - 45 56 ns Reverse recovery charge VR = 30 V, IF=lS, diF/dt = 100 A/µs Qrr - 0.08 0.12 µC

Semiconductor Group 5 29/01/1998 BSP 320 S Power dissipation Ptot = ƒ ( TA ) 0 20 40 60 80 100 120 °C 160 TA 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 W 2.0 Ptot Drain current ID = ƒ ( TA ) parameter: VGS ≥ 10 V 0 20 40 60 80 100 120 °C 160 TA 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 A 3.0 ID Safe operating area ID=f(VDS) parameter : D = 0, TC=25°C Transient thermal impedance Zth JA = ƒ ( tp ) parameter: D = tp / T -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 K/W ZthJC 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s tp single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

Semiconductor Group 6 29/01/1998 BSP 320 S Typ. output characteristics ID = ƒ( VDS ) parameter: tp = 80 µs , Tj = 25 °C VDS 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 A 6.5 ID VGS [V] a a 2.5 b b 3.0 c c 3.5 d d 4.0 e e 4.5 f f 5.0 g g 5.5 h h 6.0 i i 7.0 j j 8.0 k k 9.0 lPtot = 2 W l 10.0 Typ. drain-source on-resistance RDS (on) = ƒ( ID ) parameter: tp = 80 µs, Tj = 25 °C ID 0.00 0.04 0.08 0.12 0.16 0.20 0.24 0.28 0.32 Ω 0.38 RDS (on) VGS [V] = a 2.5 VGS [V] = a 3.0 VGS [V] = a 3.5 VGS [V] = a 4.0 VGS [V] = a a 4.5 b b 5.0 c c 5.5 d d 6.0 e e 7.0 f f 8.0 g g 9.0 h h 10.0 Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 µs VDS≥ 2 x ID x RDS(on)max 0 1 2 3 4 5 V 7 VGS A ID

Semiconductor Group 7 29/01/1998 BSP 320 S Drain-source on-resistance RDS (on) = ƒ ( Tj) parameter: ID = 2.9 A , VGS = 10 V -60 -20 20 60 100 °C 160 Tj 0.00 0.04 0.08 0.12 0.16 0.20 0.24 Ω 0.32 RDS (on) typ 98% Gate threshold voltage VGS(th) = f ( Tj) parameter:VGS=VDS, ID =20µA -60 -20 20 60 100 140 V 200 Tj 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 V 5.0 VGS(th) min typ max Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz 0 5 10 15 20 25 30 V 40 VDS 1 10 2 10 3 10 pF C Ciss Coss Crss Forward characteristics of reverse diode IF = ƒ ( VSD ) parameter: Tj, tp = 80 µs -1 10 0 10 1 10 2 10 A IF VSD Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%)

Semiconductor Group 8 29/01/1998 BSP 320 S Avalanche energy EAS = ƒ ( Tj) parameter: ID = 2.9 A , VDD = 25 V RGS = 25 Ω , L = 14.3 mH 20 40 60 80 100 120 °C 160 Tj mJ EAS Typ. gate charge VGS = ƒ ( QGate ) parameter: ID puls = 3 A 0 2 4 6 8 10 14 QGate V VGS DS maxV0,8 DS maxV0,2 Drain-source breakdown voltage V(BR)DSS = ƒ ( Tj) -60 -20 20 60 100 °C 160 Tj V V(BR)DSS