BSP320

BSP320S INFINEON | Alldatasheet

Document overview

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• PDF pages: 8

Technical content

Features

• N channel
• Enhancement mode
• Avalanche rated
• dv/dt rated VPS051631 Type Package Ordering Code BSP320S SOT-223 Q67000-S4001 Pin 1 Pin 2/4 Pin 3 G D S Maximum Ratings , at Tj = 25 ˚C, unless otherwise specified Parameter Symbol UnitValue AID 2.9Continuous drain current Pulsed drain current TA = 25 ˚C IDpulse 11.6 EAS 60Avalanche energy, single pulse ID = 2.9 A, V DD = 25 V, R GS = 25 Ω mJ A2.9IARAvalanche current,periodic limited by Tjmax Avalanche energy, periodic limited by Tjmax 0.18EAR mJ dv/dt 6Reverse diode dv/dt IS = 2.9 A, V DS = 20 V, di/dt = 200 A/µs, Tjmax = 150 ˚C kV/µs VGate source voltage VGS ±20 Power dissipation TA = 25 ˚C Ptot 1.8 W Operating temperature Tj -55 ... +150 ˚C Storage temperature Tstg -55 ... +150 IEC climatic category; DIN IEC 68-1 55/150/56 BSP 320S

Data Sheet 2 05.99

Electrical Characteristics

Parameter Symbol Values Unit at Tj = 25 ˚C, unless otherwise specified min. typ. max. Thermal Characteristics Thermal resistance, junction - soldering point (Pin 4)R thJS - 17 - K/W SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area1) R thJA 110 K/W Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA V(BR)DSS 60 - - V Gate threshold voltage, VGS = VDS ID = 20 µA VGS(th) 2.1 3 4 Zero gate voltage drain current VDS = 60 V, V GS = 0 V, Tj = 25 ˚C VDS = 60 V, V GS = 0 V, Tj = 150 ˚C IDSS 0.1 100 µA Gate-source leakage current VGS = 20 V, VDS = 0 V IGSS - 10 100 nA Drain-Source on-state resistance VGS = 10 V, ID = 2.9 A RDS(on) - 0.09 0.12 Ω 1 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air.

Data Sheet 3 05.99 Parameter Symbol Values Unit at Tj = 25 ˚C, unless otherwise specified min. typ. max. Dynamic Characteristics gfs 2.5 -5.8Transconductance VDS ≥2*ID *R DS(on)max , ID = 2.9 A S C iss - 340 pF275Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz C oss - 90Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz 120 C rss - 50 65Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz td(on) - 1711Turn-on delay time VDD = 30 V, VGS = 10 V, ID = 2.9 A, RG = 33 Ω ns tr - 4025Rise time VDD = 30 V, VGS = 10 V, ID = 2.9 A, RG = 33 Ω td(off) - 25Turn-off delay time VDD = 30 V, VGS = 10 V, ID = 2.9 A, RG = 33 Ω tf - 35 55Fall time VDD = 30 V, VGS = 10 V, ID = 2.9 A, RG = 33 Ω

Data Sheet 4 05.99 Parameter Symbol Values Unit at Tj = 25 ˚C, unless otherwise specified min. typ. max. Dynamic Characteristics Gate charge at threshold VDD = 40 V, ID = 0.1 A, VGS = 1 V Q G(th) - 0.25 0.3 nC Gate charge at Vgs=7V VDD = 40 V, ID = 2.9 A, VGS = 0 to 7 V Q g(7) 9.3 nC7.4- Gate charge total VDD = 40 V, ID = 2.9 A, VGS = 0 to 10 V Q g - 9.7 12 Gate plateau voltage VDD = 40 V, ID = 2.9 A V(plateau) - 4.7 - V Reverse Diode Inverse diode continuous forward current TA = 25 ˚C IS - 2.9 A- ISM - 11.6Inverse diode direct current,pulsed TA = 25 ˚C -Inverse diode forward voltage VGS = 0 V, IF = 5.8 A 0.95 1.2 VVSD Reverse recovery time VR = 30 V, IF=IS , diF/dt = 100 A/µs - 45 ns56trr Reverse recovery charge VR = 30 V, IF=lS , diF/dt = 100 A/µs Q rr - 0.08 0.12 µC

Data Sheet 5 05.99 Power Dissipation Ptot = f (TA) 0 20 40 60 80 100 120 ˚C 160 TA 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 W 1.9 BSP320S Ptot Drain current ID = f (TA ) 0 20 40 60 80 100 120 ˚C 160 TA 0.0 0.4 0.8 1.2 1.6 2.0 2.4 A 3.2 BSP320S ID Transient thermal impedance ZthJA = f(tp) parameter : D = tp/T 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 s tp -2 10 -1 10 0 10 1 10 2 10 K/W BSP320S ZthJA single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50 Safe operating area ID = f ( V DS ) parameter : D = 0 , TA = 25 ˚C 10 -1 10 0 10 1 10 2 V VDS -2 10 -1 10 0 10 1 10 2 10 A BSP320S ID R DS( on) = V DS / I D DC 10 ms 1 ms tp = 130.0µs

Data Sheet 6 05.99 Typ. output characteristics ID = f (VDS ) parameter: tp = 80 µs VDS 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 A 7.0 BSP320S ID VGS [V] a a 4.0 b b 4.5 c c 5.0 d d 5.5 e e 6.0 f f 6.5 g g 7.0 h h 7.5 i i 8.0 j j 9.0 k k 10.0 l Ptot = 2W l 20.0 Drain-source on-resistance RDS(on) = f (Tj) parameter : ID = 2.9 A, VGS = 10 V -60 -20 20 60 100 ˚C 180 Tj 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20 0.22 0.24 Ω 0.30 BSP320S R DS(on) typ 98%

Data Sheet 7 05.99 Typ. transfer characteristics ID= f ( VGS ) parameter: tp = 80 µs VDS ≥ 2 x ID x R DS(on)max 0 1 2 3 4 5 V 7 VGS A ID Gate threshold voltage VGS(th) = f (Tj) parameter : VGS = VDS , ID = 20 µA -60 -20 20 60 100 140 V 200 Tj 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 V 5.2 VGS(th) min typ max Typ. capacitances C = f(VDS ) Parameter: VGS =0 V, f=1 MHz 0 5 10 15 20 25 V 35 VDS 1 10 2 10 3 10 pF C C is C os C rs Forward characteristics of reverse diode IF = f (VSD ) parameter: Tj , tp = 80 µs VSD -1 10 0 10 1 10 2 10 A BSP320S IF Tj = 25 ˚C typ Tj = 25 ˚C (98%) Tj = 150 ˚C typ Tj = 150 ˚C (98%)

Data Sheet 8 05.99 Typ. gate charge VGS = f (Q Gate) parameter: ID puls =2.9A 0 2 4 6 8 10 12 nC 15 Q Gate V BSP320S VGS DS maxV0,8 DS maxV0,2 Avalanche Energy EAS = f (Tj) parameter: ID = 2.9 A,VDD = 25 V R GS = 25 Ω 20 40 60 80 100 120 ˚C 160 Tj mJ EAS Drain-source breakdown voltage V(BR)DSS = f (Tj) -60 -20 20 60 100 ˚C 180 Tj V BSP320S V(BR)DSS