BSP318S

BSP318S_08 INFINEON | Alldatasheet

Document overview

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Technical content

Features

• N-Channel
• Enhancement mode
• Avalanche rated
• Logic Level
• dv/dt rated Product Summary Drain source voltage VVDS 60 Drain-Source on-state resistanceR DS(on) 0.09 Ω Continuous drain current AID 2.6 VPS051631 Type Package Tape and Reel BSP318S PG-SOT223 L6327: 1000 pcs/r Maximum Ratings ,at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current 2.6 AID Pulsed drain current TA = 25 °C ID puls 10.4 Avalanche energy, single pulse ID = 2.6 A, V DD = 25 V, R GS = 25 Ω 60 mJEAS Avalanche current,periodic limited by Tjmax AIAR 2.6 Avalanche energy, periodic limited by Tjmax 0.18 mJEAR Reverse diode dv/dt IS = 2.6 A, V DS = 20 V, di/dt = 200 A/µs, Tjmax = 150 °C kV/µsdv/dt 6 Gate source voltage ±20 VVGS Power dissipation TA = 25 °C WPtot 1.8 Operating and storage temperature Tj , Tstg -55... +150 °C IEC climatic category; DIN IEC 68-1 55/150/56 Pb-free lead plating; RoHS compliant Pin 1 Pin 2, 4 PIN 3 G D S Marking BSP318S
• Qualified according to AEC Q101 Packaging Non dry

BSP318SRev 2.2 Thermal Characteristics Parameter Symbol UnitValues typ. max.min. Characteristics Thermal resistance, junction - soldering point (Pin 4) K/W-RthJS - 17 SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) RthJA 100 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter ValuesSymbol Unit max.typ.min. Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA V(BR)DSS 60 - V- Gate threshold voltage, VGS = VDS ID = 20 µA 1.2 1.6VGS(th) 2 Zero gate voltage drain current VDS = 60 V, V GS = 0 V, Tj = 25 °C VDS = 60 V, V GS = 0 V, Tj = 150 °C 100 0.1 µAIDSS Gate-source leakage current VGS = 20 V, VDS = 0 V IGSS 10 nA100- RDS(on) - 0.12Drain-Source on-state resistance VGS = 4.5 V, ID = 2.6 A 0.15 Ω Drain-Source on-state resistance VGS = 10 V, ID = 2.6 A RDS(on) - 0.07 0.09 1Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.

BSP318SRev 2.2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Transconductance VDS ≥2*ID*R DS(on)max , ID = 2.6 A gfs 2.4 S-5.5 Input capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz - 380 pF300Ciss Output capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz - 90 120Coss 6550-CrssReverse transfer capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz Turn-on delay time VDD = 30 V, VGS = 4.5 V, ID = 2.6 A, R G = 16 Ω td(on) 12 ns20- Rise time VDD = 30 V, VGS = 4.5 V, ID = 2.6 A, R G = 16 Ω tr - 15 25 20 30td(off)Turn-off delay time VDD = 30 V, VGS = 4.5 V, ID = 2.6 A, R G = 16 Ω Fall time VDD = 30 V, VGS = 4.5 V, ID = 2.6 A, R G = 16 Ω tf - 15 25

BSP318SRev 2.2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Gate charge at threshold VDD = 40 V, ID = 0.1 A, V = 1 V -Q G(th) nC0.60.4 Gate charge at V GS = 5 V VDD = 40 V, ID = 2.6 A, VGS = 0 to 5 V Q g(5) 7 10- 20-Q gGate charge total VDD = 40 V, ID = 2.6 A, VGS = 0 to 10 V Gate plateau voltage VDD = 40 V , ID = 2.6 A V(plateau) - 3.6 - V Parameter ValuesSymbol Unit max.typ.min. Reverse Diode A-- 2.6ISInverse diode continuous forward current TA = 25 °C Inverse diode direct current,pulsed TA = 25 °C -ISM - 10.4 Inverse diode forward voltage VGS = 0 V, IF = 5.2 A V1.2VSD 0.95- Reverse recovery time VR = 30 V, IF=IS , diF/dt = 100 A/µs - 75 ns50trr - 0.1 0.15Q rrReverse recovery charge VR = 30 V, IF=lS , diF/dt = 100 A/µs µC

BSP318SRev 2.2 Power Dissipation Ptot = f (TA) 0 20 40 60 80 100 120 °C 160 TA 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 W 1.9 BSP318S Ptot Drain current ID = f (TA ) 0 20 40 60 80 100 120 °C 160 TA 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 A 2.8 BSP318S ID Safe operating area ID = f ( VDS ) parameter : D = 0 , TA = 25 °C 10 -1 10 0 10 1 10 2 V VDS -2 10 -1 10 0 10 1 10 2 10 A BSP318S ID R DS(on) = V DS / I D DC 10 ms 1 ms tp = 140.0µs Transient thermal impedance ZthJA = f(tp) parameter : D = tp/T 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 s tp -2 10 -1 10 0 10 1 10 2 10 K/W BSP318S ZthJA single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

BSP318SRev 2.2 Typ. output characteristic ID = f (VDS ); Tj=25°C parameter: tp = 80 µs VDS 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 A 6.5 BSP318S ID VGS [V] a a 2.0 b b 2.5 c c 3.0 d d 3.5 e e 4.0 f f 4.5 g g 5.0 h h 5.5 i i 6.0 j j 7.0 k k 8.0 l Ptot = 1.80W l 10.0 Typ. transfer characteristics ID = f ( VGS ) VDS ≥ 2 x ID x RDS(on)max parameter: tp = 80 µs 0 1 2 3 4 5 6 7 8 V 10 VGS A ID Drain-source on-resistance R DS(on) = f (Tj) parameter : ID = 2.6 A, V GS = 4.5 V -60 -20 20 60 100 °C 180 Tj 0.00 0.04 0.08 0.12 0.16 0.20 0.24 0.28 Ω 0.36 BSP318S R DS(on) typ 98% Gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS , ID = 20 µA -60 -20 20 60 100 140 °C 200 Tj 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 V 3.0 V GS(th) min typ max

BSP318SRev 2.2 Typ. capacitances C = f(VDS ) parameter: VGS =0 V, f=1 MHz 0 5 10 15 20 25 30 V 40 VDS 1 10 2 10 3 10 pF C C iss C oss C rss Forward characteristics of reverse diode IF = f (VSD ) parameter: Tj , tp = 80 µs VSD -1 10 0 10 1 10 2 10 A BSP318S IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%) Avalanche Energy E AS = f (Tj) parameter: ID = 2.6 A, VDD = 25 V R GS = 25 Ω 20 40 60 80 100 120 °C 160 Tj mJ EAS Typ. gate charge VGS = f (Q Gate) parameter: ID = 2.6 A pulsed 0 4 8 12 16 nC 24 Q Gate V BSP318S VGS DS maxV0,8 DS maxV0,2

BSP318SRev 2.2 Drain-source breakdown voltage V(BR)DSS = f (Tj) -60 -20 20 60 100 °C 180 Tj V BSP318S V(BR)DSS

BSP318SRev 2.2