BSP317 SIEMENS | Alldatasheet

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Semiconductor Group 1 Sep-12-1996 BSP 317 SIPMOS ® Small-Signal Transistor

  • P channel
  • Enhancement mode
  • Logic Level Pin 1 Pin 2 Pin 3 Pin 4 G D S D Type VDS ID R DS(on) Package Marking BSP 317 -200 V -0.37 A 6 Ω SOT-223 Type Ordering Code Tape and Reel Information BSP 317 Q67000-S94 E6327 Maximum Ratings Parameter Symbol Values Unit Drain source voltage VDS -200 V Drain-gate voltage R GS = 20 kΩ VDGR -200 Gate source voltage VGS ± 20 Continuous drain current TA = 25 °C ID -0.37 A DC drain current, pulsed TA = 25 °C IDpuls -1.48 Power dissipation TA = 25 °C Ptot 1.8 W

Semiconductor Group 2 Sep-12-1996 BSP 317 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Tj -55 ... + 150°C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air R thJA ≤ 70 K/W Therminal resistance, junction-soldering point 1) R thJS ≤ 10 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = -0.25 mA, Tj = 25 °C V(BR)DSS -200 - - V Gate threshold voltage VGS =VDS, ID = -1 mA VGS(th) -0.8 -1.1 -2 Zero gate voltage drain current VDS = -200 V, VGS = 0 V, Tj = 25 °C VDS = -200 V, VGS = 0 V, Tj = 125 °C VDS = -130 V, VGS = 0 V, Tj = 25 °C IDSS -10 -0.1 -100 -100 -1 µA nA Gate-source leakage current VGS = -20 V, VDS = 0 V IGSS - -10 -100 nA Drain-Source on-state resistance VGS = -10 V, ID = -0.37 A R DS(on) - 3.4 6 Ω

Semiconductor Group 3 Sep-12-1996 BSP 317 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Transconductance VDS ≥ 2 * ID * RDS(on)max, ID = -0.37 A gfs 0.25 0.35 - S Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz C iss - 270 360 pF Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz C oss - 50 75 Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz C rss - 15 25 Turn-on delay time VDD = -30 V, VGS = -10 V, ID = -0.29 A R GS = 50 Ω td(on) - 8 1 2 ns Rise time VDD = -30 V, VGS = -10 V, ID = -0.29 A R GS = 50 Ω tr - 30 45 Turn-off delay time VDD = -30 V, VGS = -10 V, ID = -0.29 A R GS = 50 Ω td(off) - 80 110 Fall time VDD = -30 V, VGS = -10 V, ID = -0.29 A R GS = 50 Ω tf - 90 120

Semiconductor Group 4 Sep-12-1996 BSP 317 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Reverse Diode Inverse diode continuous forward current TA = 25 °C IS - - -0.37 A Inverse diode direct current,pulsed TA = 25 °C ISM - - -1.48 Inverse diode forward voltage VGS = 0 V, IF = -0.74 A, Tj = 25 °C VSD - -0.95 -1.1 V

Semiconductor Group 5 Sep-12-1996 BSP 317 Power dissipation Ptot = ƒ(TA) 0 20 40 60 80 100 120 °C 160 TA 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 W 2.0 Ptot Drain current ID = ƒ(TA) parameter: VGS ≥ -10 V 0 20 40 60 80 100 120 °C 160 TA 0.00 -0.04 -0.08 -0.12 -0.16 -0.20 -0.24 -0.28 -0.32 A -0.38 ID Safe operating area ID =f(VDS ) parameter : D = 0, TC =25°C Transient thermal impedance Zth JA = ƒ(tp) parameter: D = tp / T -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 K/W ZthJC 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s tp single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

Semiconductor Group 6 Sep-12-1996 BSP 317 Typ. output characteristics ID = ƒ(VDS ) parameter: tp = 80 µs VDS 0.0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 A -0.9 ID VGS [V] a a -2.0 b b -2.5 c c -3.0 d d -3.5 e e -4.0 f f -4.5 g g -5.0 h h -6.0 i i -7.0 j j -8.0 k k -9.0 l P tot = 2W l -10.0 Typ. drain-source on-resistance R DS (on) = ƒ(ID ) parameter: tp = 80 µs, Tj = 25 °C ID Ω R DS (on) VGS [V] = a a -2.0 b b -2.5 c c -3.0 d d -3.5 e e -4.0 f f -4.5 g g -5.0 h h -6.0 i i -7.0 j j -8.0 k k -9.0 l l -10.0 Typ. transfer characteristics ID = f(VGS ) parameter: tp = 80 µs V GS 0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 A -1.8 ID Typ. forward transconductance gfs = f (ID ) parameter: tp = 80 µs, ID 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 S 0.65 gfs

7 Sep-12-1996Semiconductor Group

Drain-source on-resistance R DS (on) = ƒ(Tj) parameter: ID = -0.37 A, VGS = -10 V -60 -20 20 60 100 °C 160 Tj Ω R DS (on) typ 98% Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS , ID = -1 mA 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 -3.2 -3.6 -4.0 V -4.6 V GS(th) -60 -20 20 60 100 °C 160 Tj typ 98% Typ. capacitances C = f (VDS ) parameter:VGS =0V, f = 1 MHz 0 -5 -10 -15 -20 -25 -30 V -40 V DS 0 10 1 10 2 10 3 10 pF C C iss C rss C oss Forward characteristics of reverse diode IF = ƒ(VSD ) parameter: Tj, tp = 80 µs -2 -10 -1 -10 0 -10 1 -10 A IF VSD Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%)

Semiconductor Group 8 Sep-12-1996 BSP 317 Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) -60 -20 20 60 100 °C 160 Tj -180 -185 -190 -195 -200 -205 -210 -215 -220 -225 -230 V -240 V(BR)DSS Safe operating area ID =f(VDS ) parameter : D = 0.01, TC =25°C

Semiconductor Group 9 Sep-12-1996 BSP 317 Package outlines SOT-223 Dimensions in mm