BSP316PE6327 INFINEON | Alldatasheet
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2012-11-26Rev.1.8 Page 1 BSP316P SIPMOS Small-Signal-Transistor Product Summary VDS -100 V RDS(on) 1.8 Ω ID -0.68 A Feature P-Channel Enhancement mode Logic Level d v d t rated P G -SOT223-4-1 Gate pin1 Drain pin 2/4 Source pin 3 Marking BSP316P Type Package Tape and Reel Information BSP316P P G -SOT223-4-1 H6327: 1000 pcs/reel Maximum Ratings , at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current TA=25°C TA=70°C ID -0.68 -0.54 A Pulsed drain current TA=25°C ID puls -2.72 Reverse diode d v /d t IS=-0.68A, VDS=-48V, d i /d t =-200A/µs, Tjmax=150°C d v /d t 6 kV/µs Gate source voltage VGS ±20 V Power dissipation TA=25°C Ptot 1.8 W Operating and storage temperature Tj , Tstg -55... +150 °C IEC climatic category; DIN IEC 68-1 55/150/56
- Qualified according to AEC Q101 Packaging Non dry ESD Class JESD22-A114-HBM Class 1a
- Halogenfree according to IEC61249221
Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - soldering point (Pin 4) RthJS - 15 25 K/W SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) RthJA 115 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage VGS=0, ID=-250µA V(BR)DSS -100 - - V Gate threshold voltage, VGS = VDS ID=-170µA VGS(th) -1 -1.5 -2 Zero gate voltage drain current VDS=-100V, VGS=0, Tj=25°C VDS=-100V, VGS=0, Tj=150°C IDSS -0.1 -10 -0.2 -100 µA Gate-source leakage current VGS=-20V, VDS=0 IGSS - -10 -100 nA Drain-source on-state resistance VGS=-4.5V, ID=-0.61A RDS(on) - 1.5 2.3 Ω Drain-source on-state resistance VGS=-10V, ID=-0.68A RDS(on) - 1.4 1.8 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 2012-11-26Rev.1.8 Page 2
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs | VDS| ≥ 2*| ID|* RDS(on)max , ID=-0.54A 0.5 1 - S Input capacitance Ciss VGS=0, VDS=-25V, f =1MHz - 117 146 pF Output capacitance Coss - 27.7 34.5 Reverse transfer capacitance Crss - 12 15 Turn-on delay time td(on) VDD=-50V, VGS=-10V, ID=-0.68A, RG=6 Ω - 4.7 7 ns Rise time tr - 7.5 11.2 Turn-off delay time td(off) - 67.4 101 Fall time tf - 25.9 38.9 Gate Charge Characteristics Gate to source charge Qgs VDD=-80V, ID=-0.68A - -0.2 -0.3 nC Gate to drain charge Qgd - -1.87 -2.8 Gate charge total Qg VDD=-80V, ID=-0.68A, VGS=0 to -10V - -5.1 -6.4 Gate plateau voltage V(plateau) VDD=-80V, ID=-0.68A - -2.7 - V Reverse Diode Inverse diode continuous forward current IS TA=25°C - - -0.68 A Inv. diode direct current, pulsed ISM - - -2.72 Inverse diode forward voltage VSD VGS=0, IF=-0.68A - -0.85 -1.2 V Reverse recovery time trr VR=-50V, IF =lS, d iF/d t =100A/µs - 44.2 55.3 ns Reverse recovery charge Qrr - 56.3 70.4 nC 2012-11-26Rev.1.8 Page 3
1 Power dissipation
Ptot = f ( T A ) 0 20 40 60 80 100 120 °C 160 TA 0.2 0.4 0.6 0.8 1.2 1.4 1.6 W 1.9 BSP 316 P Ptot
2 Drain current
ID = f ( T A ) parameter: | VGS| ≥ 10V 0 20 40 60 80 100 120 °C 160 TA -0.05 -0.1 -0.15 -0.2 -0.25 -0.3 -0.35 -0.4 -0.45 -0.5 -0.55 -0.6 A -0.75 BSP 316 P ID
3 Safe operating area
ID = f ( VDS ) parameter : D = 0 , TA = 25°C -10 -1 -10 0 -10 1 -10 2 -10 3 V VDS -2 -10 -1 -10 0 -10 1 -10 A BSP 316 P ID R D S o n = V D S / I D DC 10 ms 1 ms tp = 250.0µs
4 Transient thermal impedance
ZthJA = f ( tp) parameter : D tp/ T 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 s tp -2 10 -1 10 0 10 1 10 2 10 K/W BSP 316 P ZthJA single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50 2012-11-26Rev.1.8 Page 4
5 Typ. output characteristic ID = f ( VDS) parameter: T j =25°C, - VGS 0 0.5 1 1.5 2 2.5 3 3.5 4 V 5 -VDS 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 A 2.4 - ID 10V 4.4V 3.6V 3.2V 2.8V 2.4V 2.2V 6 Typ. drain-source on resistance RDS(on) = f ( ID) parameter: T j =25°C, - VGS - ID Ω RDS(on) 2.2V 2.4V 2.8V 3.2V 3.6V 4.4V 10V 7 Typ. transfer characteristics ID= f ( VGS ); | VDS |≥ 2 x | ID| x RDS(on)max parameter: Tj = 25 °C - VGS 0.5 1.5 2.5 A 3.5 - ID 8 Typ. forward transconductance gfs = f( ID) parameter: Tj =25°C - ID 0.3 0.6 0.9 1.2 S 1.8 gfs 2012-11-26Rev.1.8 Page 5
9 Drain-source on-state resistance
RDS(on) = f ( Tj) parameter : ID = -0.68 A, VGS = -10 V -60 -20 20 60 100 °C 180 Tj 0.5 1.5 2.5 3.5 Ω BSP 316 P RDS(on) typ 98% 10 Typ. gate threshold voltage VGS(th) = f ( T j ) parameter: VGS = VDS -60 -20 20 60 100 °C 160 Tj 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 V 2.4 VGS(th) typ. 98% 11 Typ. capacitances C f VDS) parameter: VGS=0, f =1 MHz, Tj = 25 °C 0 4 8 12 16 20 24 28 V 36 - VDS 0 10 1 10 2 10 3 10 pF C Ciss Coss Crss 12 Forward character. of reverse diode IF = f (VSD) parameter: Tj VSD -2 -10 -1 -10 0 -10 1 -10 A BSP 316 P IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%) 2012-11-26Rev.1.8 Page 6
13 Typ. gate charge VGS = f ( QGate) parameter: ID = -0.68 A pulsed, Tj = 25 °C 0 1 2 3 4 5 6 7 nC 8.5 |QG| -10 -12 V -16 BSP 316 P VGS
0.2 VDS max
0.5 VDS max
0.8 VDS max
14 Drain-source breakdown voltage
V(BR)DSS = f ( Tj) -60 -20 20 60 100 °C 180 Tj -90 -92 -94 -96 -98 -100 -102 -104 -106 -108 -110 -112 -114 V -120 BSP 316 P V(BR)DSS 2012-11-26Rev.1.8 Page 7
201211-26Rev.1.8 Page 8