BSP315P-E6327 INFINEON | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 9

Technical content

Features

  • P-Channel
  • Enhancement mode
  • Avalanche rated
  • Logic Level
  • dv/dt rated Product Summary Drain source voltage VVDS -60 Drain-Source on-state resistanceR DS(on) 0.8 Ω Continuous drain current AID -1.17 VPS051631 Maximum Ratings ,at Tj = 25 °C, unless otherwise specified Parameter Symbol UnitValue -1.17 -0.94 AContinuous drain current TA = 25 °C TA = 70 °C ID Pulsed drain current TA = 25 °C ID puls -4.68 Avalanche energy, single pulse ID = -1.17 A , V DD = -25 V, R GS = 25 Ω 24 mJEAS Avalanche energy, periodic limited by Tjmax EAR 0.18 dv/dt 6Reverse diode dv/dt IS = -1.17 A, V DS = -48 V, di/dt = 200 A/µs, Tjmax = 150 °C kV/µs Gate source voltage VGS ± 20 V Power dissipation TA = 25 °C Ptot 1.8 W Operating and storage temperature Tj , Tstg -55...+150 °C IEC climatic category; DIN IEC 68-1 55/150/56 Type Package Tape and Reel Information BSP31 5 P PG- SOT223 H6327: 1000 pcs/reel Pin 1 Pin2/4 PIN 3 G D S Marking BSP31 P
  • Qualified according to AEC Q101 Packaging Non dry ESD Class; JESD22-A114-HBM Class 0
  • Halogen­free according to IEC61249­2­21

Parameter Symbol UnitValues min. max.typ. Characteristics Thermal resistance, junction - soldering point (Pin 4)

25 K/W-RthJS -

SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) RthJA 115 K/W Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = -250 µA V(BR)DSS -60 - V- Gate threshold voltage, VGS = VDS ID = -160 µA -1 -1.5 -2VGS(th) Zero gate voltage drain current VDS = -60 V, V GS = 0 V, Tj = 25 °C VDS = -60 V, V GS = 0 V, Tj = 125 °C µA -100 IDSS -0.1 -10 IGSS - -10 -100Gate-source leakage current VGS = -20 V, VDS = 0 V nA Drain-Source on-state resistance VGS = -4.5 V, ID = -0.89 A RDS(on) - 0.8 1.4 Ω Drain-Source on-state resistance VGS = -10 V, ID = -1.17 A RDS(on) - 0.5 0.8 Ω 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 2012-11-26Rev.1.7 Page 2

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Transconductance VDS ≤ 2*ID*R DS(on)max , ID = -0.89 A 0.7gfs S-1.4 Input capacitance VGS = 0 V, V DS = -25 V, f = 1 MHz Ciss 130 160 pF- Coss - 5040Output capacitance VGS = 0 V, V DS = -25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, V DS = -25 V, f = 1 MHz 2117Crss - Turn-on delay time VDD = -30 V, V GS = -4.5 V, ID = -0.89 A, R G = 18 Ω - 36 ns24td(on) Rise time VDD = -30 V, V GS = -4.5 V, ID = -0.89 A, R G = 18 Ω tr - 149 32 48td(off)Turn-off delay time VDD = -30 V, V GS = -4.5 V, ID = -0.89 A, R G = 18 Ω Fall time VDD = -30 V, V GS = -4.5 V, ID = -0.89 A, R G = 18 Ω tf - 19 28 2012-11-26Rev.1.7 Page 3

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified UnitValuesSymbolParameter min. typ. max. Dynamic Characteristics Gate to source charge VDD = -48 V, ID = -1.17 A -Q gs nC1.10.7 Gate to drain charge VDD = -48 V, ID = -1.17 A Q gd 1.8 2.6- 7.8-Q gGate charge total VDD = -48 V, ID = -1.17 A, V GS = 0 to -10 V 5.2 Gate plateau voltage VDD = -48 V, ID = -1.17 A V(plateau) - -3.14 - V Parameter Symbol Values Unit min. typ. max. Reverse Diode Inverse diode continuous forward current TA = 25 °C IS - - -1.17 A Inverse diode direct current,pulsed TA = 25 °C ISM - - -4.68 Inverse diode forward voltage VGS = 0 V, IF = -1.17 A VSD - -0.97 -1.3 V Reverse recovery time VR = -30 V, IF=IS , diF/dt = 100 A/µs trr - 30.5 46 ns Reverse recovery charge VR = -30 V, IF =lS , diF/dt = 100 A/µs Q rr - 36 54 µC 2012-11-26Rev.1.7 Page 4

ID = f(TA ) parameter :VGS ≥ − 10V 0 20 40 60 80 100 120 °C 160 TA 0.0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 -1.1 A -1.3 BSP 315 P ID Power Dissipation Ptot = f (TA) 0 20 40 60 80 100 120 °C 160 TA 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 W 1.9 BSP 315 P Ptot Transient thermal impedance ZthJC = f (tp) parameter : D = tp/T 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 s tp -2 10 -1 10 0 10 1 10 2 10 K/W BSP 315 P ZthJC single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50 Safe operating area ID = f ( VDS ) parameter : D = 0 , TA = 25 °C -10 -1 -10 0 -10 1 -10 2 V VDS -2 -10 -1 -10 0 -10 1 -10 A BSP 315 P ID R D S o n = V DS / I D DC 10 ms 1 ms tp = 280.0µs 2012-11-26Rev.1.7 Page 5

Typ. drain-source-on-resistance RDS(on) = f (ID ) parameter: VGS ID 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 Ω 2.6 BSP 315 P R DS(on) a VGS [V] = a -2.5 b b -3.0 c c -3.5 d d -4.0 e e -4.5 f f -5.0 g g -5.5 h h -6.0 i i -6.5 j j -7.0 k k -8.0 l l -10.0 Typ. output characteristics ID = f (VDS ) parameter: tp = 80 µs VDS 0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 -2.2 -2.4 A -2.8 BSP 315 P ID VGS [V] a a -2.5 b b -3.0 c c -3.5 d d -4.0 e e -4.5 f f -5.0 g g -5.5 h h -6.0 i i -6.5 j j -7.0 k k -8.0 l Ptot = 2W l -10.0 Typ. transfer characteristics ID= f ( VGS ) VDS ≥ 2 x ID x R DS(on)max parameter: tp = 80 µs VGS 0.0 -0.5 -1.0 -1.5 -2.0 A -3.0 ID Typ. forward transconductance gfs = f(ID ); Tj=25°C parameter: gfs ID 0.0 0.5 1.0 1.5 S 2.5 gfs 2012-11-26Rev.1.7 Page 6

Drain-source on-resistance R DS(on) = f (Tj) parameter:ID = -1.17 A, V GS = -10 V -60 -20 20 60 100 °C 180 Tj 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Ω 2.1 BSP 315 P R DS(on) typ 98% Gate threshold voltage VGS(th) = f (Tj ) parameter: VGS = VDS , ID = -160 µA -60 -20 20 60 100 °C 160 Tj 0.0 -0.5 -1.0 -1.5 -2.0 V -3.0 V GS(th) -60 -20 20 60 100 °C 160 Tj 0.0 -0.5 -1.0 -1.5 -2.0 V -3.0 V GS(th) typ -60 -20 20 60 100 °C 160 Tj 0.0 -0.5 -1.0 -1.5 -2.0 V -3.0 V GS(th) 98% -60 -20 20 60 100 °C 160 Tj 0.0 -0.5 -1.0 -1.5 -2.0 V -3.0 V GS(th) Typ. capacitances C = f(VDS ) Parameter: VGS =0 V, f=1 MHz 0 -5 -10 -15 -20 -25 -30 V -40 VDS 0 10 1 10 2 10 3 10 pF C C iss C oss C rss Forward characteristics of reverse diode IF = f (VSD ) parameter: Tj , tp = 80 µs VSD -2 -10 -1 -10 0 -10 1 -10 A BSP 315 P IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%) 2012-11-26Rev.1.7 Page 7

Avalanche Energy EAS = f (Tj) parameter: ID = -1.17 A , V DD = -25 V R GS = 25 Ω 25 45 65 85 105 125 °C 165 Tj mJ E AS Typ. gate charge VGS = f (Q Gate) parameter: ID = -1.17 A pulsed Q Gate -10 -12 V -16 BSP 315 P VGS DS maxV0,8 DS maxV0,2 Drain-source breakdown voltage V(BR)DSS = f (Tj) -60 -20 20 60 100 °C 180 Tj -54 -56 -58 -60 -62 -64 -66 -68 V -72 BSP 315 P V(BR)DSS 2012-11-26Rev.1.7 Page 8

2012-11-26Rev.1.7 Page 9