BSP300

BSP300 SIEMENS | Alldatasheet

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Semiconductor Group 1 02/12/1996 BSP 300 SIPMOS ® Small-Signal Transistor

• N channel
• Enhancement mode
• Avalanche rated Pin 1 Pin 2 Pin 3 Pin 4 G D S D Type VDS ID R DS(on) Package Marking BSP 300 800 V 0.19 A 20 Ω SOT-223 BSP 300 Type Ordering Code Tape and Reel Information BSP 300 Q67050 -T0009 E6433 BSP 300 Q67050-T0017 E6327 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TA = 25 °C ID 0.19 A DC drain current, pulsed TA = 25 °C IDpuls 0.76 Avalanche energy, single pulse ID = 0.8 A, VDD = 50 V, R GS = 25 Ω L = 105 mH, Tj = 25 °C EAS mJ Gate source voltage VGS ± 20 V Power dissipation TA = 25 °C Ptot 1.8 W

Semiconductor Group 2 02/12/1996 BSP 300 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Tj -55 ... + 150°C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air 1) R thJA ≤ 70 K/W Thermal resistance, junction-soldering point 1) R thJS ≤ 14 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 25 °C V(BR)DSS 800 - - V Gate threshold voltage VGS =VDS, ID = 1 mA VGS(th) 2 3 4 Zero gate voltage drain current VDS = 800 V, VGS = 0 V, Tj = 25 °C VDS = 800 V, VGS = 0 V, Tj = 125 °C IDSS 0.1 100 µA Gate-source leakage current VGS = 20 V, VDS = 0 V IGSS - 10 100 nA Drain-Source on-state resistance VGS = 10 V, ID = 0.19 A R DS(on) - 15 20 Ω

Semiconductor Group 3 02/12/1996 BSP 300 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Transconductance VDS ≥ 2 * ID * RDS(on)max, ID = 0.19 A gfs 0.06 0.27 - S Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz C iss - 170 230 pF Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz C oss - 20 30 Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz C rss - 10 15 Turn-on delay time VDD = 30 V, VGS = 10 V, ID = 0.25 A R GS = 50 Ω td(on) - 7 1 1 ns Rise time VDD = 30 V, VGS = 10 V, ID = 0.25 A R GS = 50 Ω tr - 16 24 Turn-off delay time VDD = 30 V, VGS = 10 V, ID = 0.25 A R GS = 50 Ω td(off) - 27 36 Fall time VDD = 30 V, VGS = 10 V, ID = 0.25 A R GS = 50 Ω tf - 21 28

Semiconductor Group 4 02/12/1996 BSP 300 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Reverse Diode Inverse diode continuous forward current TA = 25 °C IS - - 0.19 A Inverse diode direct current,pulsed TA = 25 °C ISM - - 0.76 Inverse diode forward voltage VGS = 0 V, IF = 0.38 A, Tj = 25 °C VSD - 1 1.4 V Reverse recovery time VR = 30 V, IF=lS = 0 , diF/dt = 100 A/µs trr - 95 - ns Reverse recovery charge VR = 30 V, IF=lS = 0 , diF/dt = 100 A/µs Q rr - 0.25 - µC

Semiconductor Group 5 02/12/1996 BSP 300 Power dissipation Ptot = ƒ(TA) 0 20 40 60 80 100 120 °C 160 TA 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 W 2.0 Ptot Drain current ID = ƒ(TA) parameter: VGS ≥ 10 V 0 20 40 60 80 100 120 °C 160 TA 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 A 0.20 ID Safe operating area ID = ƒ(VDS ) parameter: D = 0.01, TC = 25°C -3 10 -2 10 -1 10 0 10 A ID 10 0 10 1 10 2 10 3 V VDS R DS(on) V DS / I D DC 10 ms 1 ms tp = 760.0µs Transient thermal impedance Zth JA = ƒ(tp) parameter: D = tp / T -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 K/W ZthJC 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s tp single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

Semiconductor Group 6 02/12/1996 BSP 300 Typ. output characteristics ID = ƒ(VDS ) parameter: tp = 80 µs , Tj = 25 °C 0 4 8 12 16 V 24 VDS 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 A 0.45 ID VGS [V] a a 4.0 b b 4.5 c c 5.0 d d 5.5 e e 6.0 f f 6.5 g g 7.0 h h 7.5 i i 8.0 j j 9.0 k k 10.0 l P tot = 2W l 20.0 Typ. drain-source on-resistance R DS (on) = ƒ(ID ) parameter: tp = 80 µs, Tj = 25 °C ID Ω R DS (on) VGS [V] = a 4.0 VGS [V] = a a 4.5 b b 5.0 c c 5.5 d d 6.0 e e 6.5 f f 7.0 g g 7.5 h h 8.0 i i 9.0 j j 10.0 k k 20.0 Typ. transfer characteristics ID = f(VGS ) parameter: tp = 80 µs VDS ≥ 2 x ID x R DS(on)max 0 1 2 3 4 5 6 7 8 V 10 V GS 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 A 1.0 ID Typ. forward transconductance gfs = f (ID ) parameter: tp = 80 µs, VDS ≥2 x ID x R DS(on)max ID 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 S 0.50 gfs

7 02/12/1996Semiconductor Group BSP 300 Drain-source on-resistance R DS (on) = ƒ(Tj) parameter: ID = 0.19 A, VGS = 10 V -60 -20 20 60 100 °C 160 Tj Ω R DS (on) typ 98% Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS , ID = 1 mA 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 V 4.6 V GS(th) -60 -20 20 60 100 °C 160 Tj typ 98% Typ. capacitances C = f (VDS ) parameter:VGS =0V, f = 1 MHz 0 5 10 15 20 25 30 V 40 V DS 0 10 1 10 2 10 3 10 pF C C rss C oss C iss Forward characteristics of reverse diode IF = ƒ(VSD ) parameter: Tj, tp = 80 µs -3 10 -2 10 -1 10 0 10 A IF VSD Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%)

Semiconductor Group 8 02/12/1996 BSP 300 Avalanche energy EAS = ƒ(Tj) parameter: ID = 0.8 A, VDD = 50 V R GS = 25 Ω , L = 105 mH 20 40 60 80 100 120 °C 160 Tj mJ E AS Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) -60 -20 20 60 100 °C 160 Tj 720 740 760 780 800 820 840 860 880 900 920 V 960 V (BR)DSS