BSP299

BSP299_09 INFINEON | Alldatasheet

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Rev 2.1 1 2009-03-25 BSP 299 SIPMOS ® Small-Signal Transistor

• N channel  Enhancement mode  Avalanche rated Pin 1 Pin 2 Pin 3 Pin 4 G D S D Type VDS ID RDS(on) Package Marking BSP 299 500 V 0.4 A 4 Ω SOT-223 BSP299 Type Pb-free Tape and Reel Information BSP 299 Yes L6327 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TA = 25 °C ID 0.4 A DC drain current, pulsed TA = 25 °C IDpuls 1.6 Avalanche energy, single pulse ID = 1.2 A, RGS = 25 Ω T j = 25 °C EAS 130 mJ Gate source voltage VGS ± 20 V Power dissipation TA = 25 °C Ptot 1.8 W  Pb-free lead plating; RoHS compliant

Rev 2.1 2 2009-03-252 BSP 299 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Tj -55 ... + 150 °C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air 1) RthJA ≤ 70 K/W Therminal resistance, junction-soldering point RthJS ≤ 25 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 0 °C V(BR)DSS 500 - - V Gate threshold voltage VGS=VDS, ID = 1 mA VGS(th) 2.1 3 4 Zero gate voltage drain current VDS = 500 V, VGS = 0 V, Tj = 25 °C VDS = 500 V, VGS = 0 V, Tj = 125 °C IDSS 0.1 100 µA Gate-source leakage current VGS = 20 V, VDS = 0 V IGSS - 10 100 nA Drain-Source on-state resistance VGS = 10 V, ID = 0.4 A RDS(on) - 3.1 4 Ω

Rev 2.1 3 2009-03-25 BSP 299 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Transconductance VDS≥ 2 * ID * RDS(on)max, ID = 0.4 A gfs 0.3 1.2 - S Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Ciss - 300 400 pF Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Coss - 40 60 Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Crss - 15 25 Turn-on delay time VDD = 30 V, VGS = 10 V, ID = 0.3 A RGS = 50 Ω td(on) - 8 1 2 ns Rise time VDD = 30 V, VGS = 10 V, ID = 0.3 A RGS = 50 Ω tr - 15 22 Turn-off delay time VDD = 30 V, VGS = 10 V, ID = 0.3 A RGS = 50 Ω td(off) - 55 70 Fall time VDD = 30 V, VGS = 10 V, ID = 0.3 A RGS = 50 Ω tf - 30 40

Rev 2.1 4 2009-03-25 BSP 299 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Reverse Diode Inverse diode continuous forward current TA = 25 °C IS - - 0.4 A Inverse diode direct current,pulsed TA = 25 °C ISM - - 1.6 Inverse diode forward voltage VGS = 0 V, IF = 0.8 A, Tj = 25 °C VSD - 0.9 1.2 V Reverse recovery time VR = 100 V, IF=lS, diF/dt = 100 A/µs trr - 300 - ns Reverse recovery charge VR = 100 V, IF=lS, diF/dt = 100 A/µs Qrr - 2.5 - µC

Rev 2.1 5 2009-03-25 BSP 299 Power dissipation Ptot = ƒ(TA) 0 20 40 60 80 100 120 °C 160 TA 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 W 2.0 Ptot Drain current ID = ƒ(TA) parameter: VGS ≥ 10 V 0 20 40 60 80 100 120 °C 160 TA 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 A 0.45 ID Safe operating area ID=f(VDS) parameter : D = 0, TC=25°C Transient thermal impedance Zth JA = ƒ(tp) parameter: D = tp / T -510 -410 -310 -210 -110 010 110 210 K/W ZthJC 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0s tp single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

Rev 2.1 6 2009-03-25 BSP 299 Typ. output characteristics ID = ƒ(VDS) parameter: V GS , Tj = 25 °C 0 2 4 6 8 10 12 V 16 VDS 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 A 0.9 ID VGS [V] a a 4.0 b b 4.5 c c 5.0 d d 5.5 e e 6.0 f f 6.5 g g 7.0 h h 7.5 i i 8.0 j j 9.0 k k 10.0 l Ptot = 2W l 20.0 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: V GS , Tj = 25 °C ID Ω RDS (on) VGS [V] = a a 4.0 b b 4.5 c c 5.0 d d 5.5 e e 6.0 f f 6.5 g g 7.0 h h 7.5 i i 8.0 j j 9.0 k k 10.0 l l 20.0 Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 µs 0 1 2 3 4 5 6 7 8 V 10 VGS 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 A 2.6 ID Typ. forward transconductancegfs = f (ID) parameter: tp = 80 µs, ID 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 S 2.6 gfs 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 02468 1 0 1 2 1 4 A 5V 4.5V V 0 ȍ 4.5V 10V A ID 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 02468 1 0 1 2 1 4 A 10V 4.5V V

7 2009-03-25Rev 2.1 BSP 299 Drain-source on-resistance RDS (on) = ƒ(Tj) parameter: ID = 0.4 A, VGS = 10 V -60 -20 20 60 100 °C 160 Tj Ω RDS (on) typ 98% Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 V 4.6 VGS(th) -60 -20 20 60 100 °C 160 Tj typ 98% Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz 0 5 10 15 20 25 30 V 40 VDS -210 -110 010 110 nF C Crss Ciss Coss Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj, tp = 80 µs -210 -110 010 110 A IF VSD Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%) -60 -20 20 60 100 140 180 98% typ ȍ

Rev 2.1 8 2009-03-25 BSP 299 Avalanche energy EAS = ƒ(Tj) parameter: ID = 1.2 A, VDD = 50 V RGS = 25 Ω, L = 163 mH 20 40 60 80 100 120 °C 160 Tj 100 110 120 mJ 140 EAS Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) -60 -20 20 60 100 °C 160 Tj 450 460 470 480 490 500 510 520 530 540 550 560 570 580 V 600 V(BR)DSS Safe operating area ID=f(VDS) parameter : D = 0.01, TC=25°C 05 1 0 1 5 2 0 Safe operating area ID=f(VDS) parameter : D = 0.01, TC=25°C Typ. gate charge VGS=f(Qgate); ID=0.4 A pulsed Safe operating area ID=f(VDS) parameter : D = 0.01, TC=25° VDD =200 V V nC Qgate VGS

Rev 2.1 9 2009-03-25 BSP 299 Package outlines SOT-223 Dimensions in mm

81726 Munich, Germany

© 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 2.1 page 10 2009-03-25