BSP298 SIEMENS | Alldatasheet

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Semiconductor Group 1 Sep-12-1996 BSP 298 SIPMOS ® Small-Signal Transistor

  • N channel
  • Enhancement mode
  • Avalanche rated Pin 1 Pin 2 Pin 3 Pin 4 G D S D Type VDS ID R DS(on) Package Marking BSP 298 400 V 0.5 A 3 Ω SOT-223 BSP 298 Type Ordering Code Tape and Reel Information BSP 298 Q67000-S200 E6327 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TA = 26 °C ID 0.5 A DC drain current, pulsed TA = 25 °C IDpuls Avalanche energy, single pulse ID = 1.35 A, VDD = 50 V, R GS = 25 Ω L = 125 mH, Tj = 25 °C EAS 130 mJ Gate source voltage VGS ± 20 V Power dissipation TA = 25 °C Ptot 1.8 W

Semiconductor Group 2 Sep-12-1996 BSP 298 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Tj -55 ... + 150°C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air R thJA ≤ 70 K/W Therminal resistance, junction-soldering point 1) R thJS ≤ 10 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 0 °C V(BR)DSS 400 - - V Gate threshold voltage VGS =VDS, ID = 1 mA VGS(th) 2.1 3 4 Zero gate voltage drain current VDS = 400 V, VGS = 0 V, Tj = 25 °C VDS = 400 V, VGS = 0 V, Tj = 125 °C IDSS 0.1 100 µA Gate-source leakage current VGS = 20 V, VDS = 0 V IGSS - 10 100 nA Drain-Source on-state resistance VGS = 10 V, ID = 0.5 A R DS(on) - 2.2 3 Ω

Semiconductor Group 3 Sep-12-1996 BSP 298 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Transconductance VDS ≥ 2 * ID * RDS(on)max, ID = 0.5 A gfs 0.5 1.2 - S Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz C iss - 300 400 pF Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz C oss - 50 75 Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz C rss - 20 30 Turn-on delay time VDD = 30 V, VGS = 10 V, ID = 0.3 A R GS = 50 Ω td(on) - 10 15 ns Rise time VDD = 30 V, VGS = 10 V, ID = 0.3 A R GS = 50 Ω tr - 25 40 Turn-off delay time VDD = 30 V, VGS = 10 V, ID = 0.3 A R GS = 50 Ω td(off) - 30 40 Fall time VDD = 30 V, VGS = 10 V, ID = 0.3 A R GS = 50 Ω tf - 20 30

Semiconductor Group 4 Sep-12-1996 BSP 298 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Reverse Diode Inverse diode continuous forward current TA = 25 °C IS - - 0.5 A Inverse diode direct current,pulsed TA = 25 °C ISM - - 2 Inverse diode forward voltage VGS = 0 V, IF = 1 A, Tj = 25 °C VSD - 0.95 1.2 V Reverse recovery time VR = 100 V, IF=lS, diF/dt = 100 A/µs trr - 300 - ns Reverse recovery charge VR = 100 V, IF=lS, diF/dt = 100 A/µs Q rr - 2.5 - µC

Semiconductor Group 5 Sep-12-1996 BSP 298 Power dissipation Ptot = ƒ(TA) 0 20 40 60 80 100 120 °C 160 TA 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 W 2.0 Ptot Drain current ID = ƒ(TA) parameter: VGS ≥ 10 V 0 20 40 60 80 100 120 °C 160 TA 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 A 0.55 ID Safe operating area ID =f(VDS ) parameter : D = 0, TC =25°C Transient thermal impedance Zth JA = ƒ(tp) parameter: D = tp / T -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 K/W ZthJC 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s tp single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

Semiconductor Group 6 Sep-12-1996 BSP 298 Typ. output characteristics ID = ƒ(VDS ) parameter: tp = 80 µs , Tj = 25 °C 0 1 2 3 4 5 6 7 8 V 10 VDS 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 A 1.2 ID VGS [V] a a 4.0 b b 4.5 c c 5.0 d d 5.5 e e 6.0 f f 6.5 g g 7.0 h h 7.5 i i 8.0 j j 9.0 k k 10.0 l P tot = 2W l 20.0 Typ. drain-source on-resistance R DS (on) = ƒ(ID ) parameter: tp = 80 µs, Tj = 25 °C ID Ω R DS (on) VGS [V] = a a 4.0 b b 4.5 c c 5.0 d d 5.5 e e 6.0 f f 6.5 g g 7.0 h h 7.5 i i 8.0 j j 9.0 k k 10.0 l l 20.0 Typ. transfer characteristics ID = f(VGS ) parameter: tp = 80 µs 0 1 2 3 4 5 6 7 8 V 10 V GS 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 A 2.6 ID Typ. forward transconductance gfs = f (ID ) parameter: tp = 80 µs, ID 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 S 2.6 gfs

7 Sep-12-1996Semiconductor Group

Drain-source on-resistance R DS (on) = ƒ(Tj) parameter: ID = 0.5 A, VGS = 10 V -60 -20 20 60 100 °C 160 Tj 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 Ω 7.5 R DS (on) typ 98% Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS , ID = 1 mA 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 V 4.6 V GS(th) -60 -20 20 60 100 °C 160 Tj typ 98% Typ. capacitances C = f (VDS ) parameter:VGS =0V, f = 1 MHz 0 5 10 15 20 25 30 V 40 V DS -2 10 -1 10 0 10 1 10 nF C C rss C iss C oss Forward characteristics of reverse diode IF = ƒ(VSD ) parameter: Tj, tp = 80 µs -2 10 -1 10 0 10 1 10 A IF VSD Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%)

Semiconductor Group 8 Sep-12-1996 BSP 298 Avalanche energy EAS = ƒ(Tj) parameter: ID = 1.35 A, VDD = 50 V R GS = 25 Ω , L = 125 mH 20 40 60 80 100 120 °C 160 Tj 100 110 120 mJ 140 E AS Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) -60 -20 20 60 100 °C 160 Tj 360 370 380 390 400 410 420 430 440 450 460 V 480 V (BR)DSS Safe operating area ID =f(VDS ) parameter : D = 0.01, TC =25°C

Semiconductor Group 9 Sep-12-1996 BSP 298 Package outlines SOT-223 Dimensions in mm