BSP297

BSP297_09 INFINEON | Alldatasheet

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Technical content

BSP297Rev. 2.1 SIPMOS/g210/g32Small-Signal-Transistor Product Summary VDS 200 V RDS(on) 1.8 /g87 ID 0.66 A Feature /g183 N-Channel /g183 Enhancement mode /g183 Logic Level /g183dv/dt rated PG-SOT223 VPS051631 Marking BSP297 Type Package Tape and Reel Information BSP297 PG-SOT223 L6327: 1000 pcs/reel Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current TA=25°C TA=70°C ID 0.66 0.53 A Pulsed drain current TA=25°C ID puls 2.64 Reverse diode dv/dt IS=0.66A, VDS=160V, di/dt=200A/µs, Tjmax=150°C dv/dt 6 kV/µs Gate source voltage VGS ±20 V ESD (JESD22-A114-HBM) 1B (>500V, <1000V) Power dissipation TA=25°C Ptot 1.8 W Operating and storage temperature Tj , Tstg -55... +150 °C IEC climatic category; DIN IEC 68-1 55/150/56

• Pb-free lead plating; RoHS compliant 2009-08-18Page 1 x Qualified according to AEC Q101 Non dry Packaging Pb-free Yes

BSP297Rev. 2.1 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - soldering point (Pin 4) RthJS - 15 25 K/W SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) RthJA 115 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage VGS=0, ID=250µA V(BR)DSS 200 - - V Gate threshold voltage, VGS = VDS ID=400µA VGS(th) 0.8 1.4 1.8 Zero gate voltage drain current VDS=200V, VGS=0, Tj=25°C VDS=200V, VGS=0, Tj=150°C IDSS 0.1 100 µA Gate-source leakage current VGS=20V, VDS=0 IGSS - 1 10 nA Drain-source on-state resistance VGS=4.5V, ID=0.53A RDS(on) - 1.2 3 /g87 Drain-source on-state resistance VGS=10V, ID=0.66A RDS(on) - 1 1.8 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.

BSP297Rev. 2.1 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs VDS/g1792*ID*RDS(on)max, ID=0.53A 0.47 0.94 - S Input capacitance Ciss VGS=0, VDS=25V, f=1MHz - 286 357 pF Output capacitance Coss - 38 47 Reverse transfer capacitance Crss - 15.7 23.5 Turn-on delay time td(on) VDD=100V, VGS=4.5V, ID=0.6A, RG=15/g87 - 5.2 7.8 ns Rise time tr - 3.8 5.7 Turn-off delay time td(off) - 49 74 Fall time tf - 19 29 Gate Charge Characteristics Gate to source charge Qgs VDD=160V, ID=0.66A - 0.7 0.9 nC Gate to drain charge Qgd - 5.2 7.8 Gate charge total Qg VDD=160V, ID=0.66A, VGS=0 to 10V - 12.9 16.1 Gate plateau voltage V(plateau) VDD=160V, ID = 0.66 A - 2.7 3.3 V Reverse Diode Inverse diode continuous forward current IS TA=25°C - - 0.66 A Inv. diode direct current, pulsed ISM - - 2.64 Inverse diode forward voltage VSD VGS=0, IF = IS - 0.84 1.2 V Reverse recovery time trr VR=100V, IF=lS, diF/dt=100A/µs - 52 78 ns Reverse recovery charge Qrr - 80 120 nC

BSP297Rev. 2.1

1 Power dissipation

Ptot = f (TA) 0 20 40 60 80 100 120 °C 160 TA 0.2 0.4 0.6 0.8 1.2 1.4 1.6 W 1.9 BSP297 Ptot

2 Drain current

I D = f (TA) parameter: VGS/g179 10 V 0 20 40 60 80 100 120 °C 160 TA 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 A 0.75 BSP297 ID

3 Safe operating area

I D = f ( VDS ) parameter : D = 0 , TA = 25 °C 10 0 10 1 10 2 10 3 V VDS -310 -210 -110 010 110 A BSP297 ID RDS(on) =VDS /I D DC 10 ms 1 ms tp = 100.0µs

4 Transient thermal impedance

Z thJA = f (tp) parameter : D = tp/T 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 s tp -210 -110 010 110 210 K/W BSP297 ZthJA single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

BSP297Rev. 2.1 5 Typ. output characteristic ID = f (VDS) parameter: Tj = 25 °C, VGS VDS 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.1 A 1.3 ID 2.8V 2.6V 3.4V 3.8V 4.6V 10V 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: Tj = 25 °C, VGS ID 0.5 1.5 2.5 3.5 /g87 4.5 RDS(on) 2.6V 2.8V 3.4V 3.8V 4.6V 10V 7 Typ. transfer characteristics ID= f ( VGS ); VDS/g179 2 x ID x RDS(on)max parameter: Tj = 25 °C 0 0.5 1 1.5 2 2.5 V 3.5 VGS 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.1 A 1.3 ID 8 Typ. forward transconductance g fs = f(ID) parameter: Tj = 25 °C ID 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.1 1.2 S 1.4 gfs

BSP297Rev. 2.1

9 Drain-source on-state resistance

RDS(on) = f (Tj) parameter : ID = 0.66 A, VGS = 10 V -60 -20 20 60 100 °C 180 Tj /g87 8.5 BSP297 RDS(on) typ 98% 10 Typ. gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS; ID =400µA -60 -20 20 60 100 °C 160 Tj 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 V 2.2 VGS(th) typ. 98% 11 Typ. capacitances C = f (V DS) parameter: VGS=0, f=1 MHz, Tj = 25 °C 0 5 10 15 20 V 30 VDS 110 210 310 pF C Crss Coss Ciss 12 Forward character. of reverse diode I F = f (VSD) parameter: Tj VSD -210 -110 010 110 A BSP297 IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%)

BSP297Rev. 2.1 13 Typ. gate charge VGS = f (QG); parameter: VDS , ID = 0.66 A pulsed, Tj = 25 °C 0 2 4 6 8 10 12 14 16 nC 20 QG V BSP297 VGS

0.2 VDS max

0.5 VDS max

0.8 VDS max

14 Drain-source breakdown voltage

V (BR)DSS = f (Tj) -60 -20 20 60 100 °C 180 Tj 180 185 190 195 200 205 210 215 220 225 230 235 V 245 BSP297 V(BR)DSS

BSP297Rev. 2.1