BSP296L6327 INFINEON | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 8
Technical content
Rev. 2.1 BSP296 SIPMOS Small-Signal-Transistor Product Summary VDS 100 V RDS(on) 0.7 Ω ID 1.1 A Feature
- N-Channel
- Enhancement mode
- Logic Level
- dv/dtrated PG-SOT223 VPS051631 Marking BSP296 Type Package Tape and Reel Information BSP296 PG-SOT223 L6433: 4000 pcs/reel Maximum Ratings , atTj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current TA=25°C TA=70°C ID 1.1 0.88 A Pulsed drain current TA=25°C ID puls 4.4 Reverse diode dv/dt IS=1.1A,V DS =80V, di/dt=200A/µs,Tjmax=150°C dv/dt 6 kV/µs Gate source voltage VGS ±20 V ESD (JESD22-A114-HBM) 1B (>500V, <1000V) Power dissipation TA=25°C Ptot 1.79 W Operating and storage temperature Tj,Tstg -55... +150 °C IEC climatic category; DIN IEC 68-1 55/150/56 Pb-free lead plating; RoHS compliant• BSP296BSP296 PG-SOT223 L6327: 1000 pcs/reel x Qualified according to AEC Q101 Packaging Non dry Non dry
Rev. 2.1 BSP296 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - soldering point (Pin 4) R thJS - - 25 K/W SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) R thJA 115 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage V GS =0,ID =250µA V(BR)DSS 100 - - V Gate threshold voltage, VGS = VDS ID=400µA VGS(th) 0.8 1.4 1.8 Zero gate voltage drain current V DS =100V, VGS =0,Tj=25°C V DS =100V, VGS =0,Tj=150°C IDSS 0.1 µA Gate-source leakage current V GS =20V, VDS =0 IGSS - 10 100 nA Drain-source on-state resistance V GS =4.5V,ID=0.95A R DS(on) - 0.62 1 Ω Drain-source on-state resistance V GS =10V, ID =1.1A R DS(on) - 0.43 0.7 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 2009-08-18Page 2
Rev. 2.1 BSP296 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs V DS ≥2*ID*R DS(on)max, ID=0.88A 0.6 1.2 - S Input capacitance Ciss V GS =0,V DS =25V, f=1MHz - 291 364 pF Output capacitance Coss - 53 66 Reverse transfer capacitanceCrss - 29 36 Turn-on delay time td(on) V DD =50V, VGS =10V, ID=1.1A,R G =6Ω - 5.2 7.8 ns Rise time tr - 7.9 11.8 Turn-off delay time td(off) - 37.4 56.1 Fall time tf - 21.4 32.1 Gate Charge Characteristics Gate to source charge Q gs VDD =80V, ID =1.1A - 0.7 0.9 nC Gate to drain charge Q gd - 5 7.5 Gate charge total Q g VDD =80V, ID =1.1A, VGS =0 to 10V - 13.8 17.2 Gate plateau voltage V(plateau)VDD =80V, ID = 1.1 A - 2.7 - V Reverse Diode Inverse diode continuous forward current IS TA=25°C - - 1.1 A Inv. diode direct current, pulsedISM - - 4.4 Inverse diode forward voltageVSD V GS =0,IF = IS - 0.82 1.2 V Reverse recovery time trr V R=50V, IF=lS , diF/dt=100A/µs - 44.3 55.4 ns Reverse recovery charge Q rr - 71.9 89.8 nC 2009-08-18Page 3
Rev. 2.1 BSP296
1 Power dissipation
Ptot = f(TA ) 0 20 40 60 80 100 120 °C 160 TA 0.2 0.4 0.6 0.8 1.2 1.4 1.6 W 1.9 BSP296 P tot
2 Drain current
I D = f(TA) parameter:VGS ≥ 10 V 0 20 40 60 80 100 120 °C 160 TA 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.1 A 1.3 BSP296 ID
3 Safe operating area
I D = f ( VDS ) parameter : D = 0 , TA = 25 °C 10 0 10 1 10 2 10 3 V VDS -210 -110 010 110 A BSP296 ID R DS(on) =VDS /ID DC 10 ms 1 ms tp = 120.0µs
4 Transient thermal impedance
Z thJA = f(tp) parameter : D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -410 -310 -210 -110 010 110 210 K/W BSP296 ZthJA single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50 2009-08-18Page 4
Rev. 2.1 BSP296 5 Typ. output characteristic ID = f (VDS ) parameter:Tj= 25 °C, VGS 0 0.5 1 1.5 2 V 3 VDS 0.2 0.4 0.6 0.8 1.2 1.4 1.6 A ID 2.1V 2.5V 2.7V 3.1V 3.7V 3.9V 4.1V 4.3V 4.5V 10V 6 Typ. drain-source on resistance RDS(on) = f(ID ) parameter:Tj = 25 °C, VGS ID 0.2 0.5 0.8 1.1 1.4 Ω R DS(on) 2.1V 2.5V 2.7V 3.1V 3.7V 3.9V 4.5V 10V 7 Typ. transfer characteristics ID = f ( VGS ); VDS ≥ 2 x ID x RDS(on)max parameter: Tj = 25 °C VGS 0.4 0.8 1.2 A ID 8 Typ. forward transconductance gfs = f(ID ) parameter:Tj = 25 °C ID 0.4 0.8 1.2 S gfs 2009-08-18Page 5
Rev. 2.1 BSP296
9 Drain-source on-state resistance
R DS(on) = f(Tj) parameter : ID = 1.1 A, VGS = 10 V -60 -20 20 60 100 °C 180 Tj 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 2.2 2.4 Ω 2.8 BSP296 R DS(on) typ 98% 10 Typ. gate threshold voltage V GS(th) = f (Tj) parameter:VGS = VDS ;ID =400µA -60 -20 20 60 100 °C 160 Tj 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 V 2.4 V GS(th) typ. 98% 11 Typ. capacitances C = f( VDS ) parameter:VGS =0,f=1 MHz, Tj = 25 °C 0 5 10 15 20 V 30 VDS 110 210 310 pF C C iss Coss C rss 12 Forward character. of reverse diode I F = f (VSD ) parameter:Tj VSD -210 -110 010 110 A BSP296 IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%) 2009-08-18Page 6
Rev. 2.1 BSP296 13 Typ. gate charge VGS = f (Q G ); parameter: VDS , ID = 1.1 A pulsed, Tj = 25 °C 0 2 4 6 8 10 12 14 16 18nC 21 Q G V BSP296 V GS 0.2VDS max 0.5VDS max 0.8VDS max
14 Drain-source breakdown voltage
V(BR)DSS = f(Tj) -60 -20 20 60 100 °C 180 Tj 100 102 104 106 108 110 112 114 V 120 BSP296 V (BR)DSS 2009-08-18Page 7
Rev. 2.1 BSP296