BSP295L6327 INFINEON | Alldatasheet
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BSP295Rev 2.3 SIPMOS Small-Signal-Transistor Product Summary VDS 60 V RDS(on) 0.3 /c87 ID 1.8 A Feature /c183 N-Channel /c183 Enhancement mode /c183 d v t rated PG-SOT223 VPS051631 Marking BSP295 Type Package Tape and Reel Information BSP295 PG-SOT223 H6327: 1000 pcs/reel Maximum Ratings , at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current TA=25°C TA=70°C ID 1.8 1.44 A Pulsed drain current TA=25°C ID puls 7.2 Reverse diode d v /d t IS=1.8A, V DS =40V, d i /d t =200A/µs, Tjmax=150°C d v /d t 6 kV/µs Gate source voltage VGS ±20 V ESD class (JESD22-A114-HBM) 1B (>500V, <1000V) Power dissipation TA=25°C Ptot 1.8 W Operating and storage temperature Tj ,Tstg -55... +150 °C IEC climatic category; DIN IEC 68-1 55/150/56
- Pb-free lead plating; RoHS compliant x Qualified according to AEC Q101 PackagingMarking Non dry
- Halogenfree according to IEC61249221
BSP295Rev 2.3 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - soldering pointR thJS - 15 25 K/W SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) R thJA 115 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage V GS =0, ID =250µA V(BR)DSS 60 - - V Gate threshold voltage, VGS = VDS ID=400µA VGS(th) 0.8 1.1 1.8 Zero gate voltage drain current V DS =60V, VGS =0, Tj=25°C V DS =60V, VGS =0, Tj=150°C IDSS 0.1 µA Gate-source leakage current V GS =20V, VDS =0 IGSS - 1 10 nA Drain-source on-state resistance V GS =10V, ID =1.8A V GS =4.5V, ID=1.8A R DS(on) 0.22 0.39 0.3 0.5 /c87 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 2012-11-28Page 2
BSP295Rev 2.3 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs V DS /c179 2* ID* R DS(on)max, ID=1.44A 0.8 1.7 - S Input capacitance Ciss V GS =0, V DS =25V, f =1MHz - 295 368 pF Output capacitance Coss - 95 118 Reverse transfer capacitanceCrss - 45 67 Turn-on delay time td(on) V DD =15V, VGS =4.5V, ID=1.44 A, R G =15/c87 - 5.4 8.1 ns Rise time tr - 9.9 15 Turn-off delay time td(off) - 27 41 Fall time tf - 19 28 Gate Charge Characteristics Gate to source charge Q gs VDD =24V, ID =1.8A - 0.9 1.1 nC Gate to drain charge Q gd - 5.6 8.4 Gate charge total Q g VDD =24V, ID =1.8A, VGS =0 to 10V - 14 17 Gate plateau voltage V(plateau)VDD =24V, ID = 1.8 A - 3.1 3.8 V Reverse Diode Inverse diode continuous forward current IS TA=25°C - - 1.8 A Inv. diode direct current, pulsedISM - - 7.2 Inverse diode forward voltageVSD V GS =0, IF = IS - 0.84 1.3 V Reverse recovery time trr V R=25V, IF =lS , d iF/d t =100A/µs - 36 45 ns Reverse recovery charge Q rr - 38 48 nC 2012-11-28Page 3
BSP295Rev 2.3
1 Power dissipation
Ptot = f(TA ) 0 20 40 60 80 100 120 °C 160 TA 0.2 0.4 0.6 0.8 1.2 1.4 1.6 W 1.9 BSP295 P tot
2 Drain current
ID = f ( TA) parameter: VGS /c179 10 V 0 20 40 60 80 100 120 °C 160 TA 0.2 0.4 0.6 0.8 1.2 1.4 1.6 A 1.9 BSP295 ID
3 Safe operating area
ID = f ( VDS ) parameter : D = 0 , TA = 25 °C 10 0 10 1 10 2 V VDS -210 -110 010 110 A BSP295 ID R D S o n =V D S /ID DC 10 ms 1 ms tp = 150.0µs
4 Transient thermal impedance
ZthJA = f ( tp) parameter : D tp/ T 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 s tp -210 -110 010 110 210 K/W BSP295 ZthJA single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50 2012-11-28Page 4
BSP295Rev 2.3 5 Typ. output characteristic ID = f (VDS ) parameter:Tj= 25 °C, VGS 0 0.5 1 1.5 2 2.5 3 3.5 4 V 5 VDS 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 A 3.6 ID 4.2V 3.8V 3.4V 2.8V 2.4V 10V 6 Typ. drain-source on resistance RDS(on) = f ( ID ) parameter: Tj = 25 °C, VGS ID 0.2 0.4 0.6 0.8 1.2 1.4 /c87 1.8 R DS(on) 10V 7 Typ. transfer characteristics ID = f ( VGS ); VDS /c179 2 x ID x RDS(on)max parameter: Tj = 25 °C 0 0.5 1 1.5 2 2.5 3 V 4 VGS 0.5 1.5 A 2.5 ID 8 Typ. forward transconductance gfs = f( ID ) parameter: Tj = 25 °C ID 0.5 1.5 S 2.5 gfs 2012-11-28Page 5
BSP295Rev 2.3
9 Drain-source on-state resistance
R DS(on) = f(Tj) parameter : ID = 1.8 A, VGS = 10 V -60 -20 20 60 100 °C 180 Tj 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 /c87 0.75 BSP295 R DS(on) typ 98% 10 Typ. gate threshold voltage VGS(th) = f ( T j ) parameter: VGS = VDS ;ID = 1 mA -60 -20 20 60 100 °C 160 Tj 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 V 2.2 V GS(th) typ. 98% 11 Typ. capacitances C f VDS ) parameter: VGS =0, f =1 MHz, Tj = 25 °C 0 5 10 15 20 V 30 VDS 110 210 310 pF C Crss Coss Ciss 12 Forward character. of reverse diode IF = f (VSD ) parameter: Tj VSD -210 -110 010 110 A BSP295 IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%) 2012-11-28Page 6
BSP295Rev 2.3 13 Typ. avalanche energy EAS = f(Tj) par.:ID = 3.9 A, VDD = 25 V, R GS = 25 /c87 20 40 60 80 100 120 °C 160 Tj mJ E AS 14 Typ. gate charge VGS = f ( Q G ); parameter: VDS , ID = 1.8 A pulsed, Tj = 25 °C 0 4 8 12 16 nC 24 Q G V BSP295 V GS
0.2 VDS max
0.5 VDS max
0.8 VDS max
15 Drain-source breakdown voltage
V(BR)DSS = f ( Tj) -60 -20 20 60 100 °C 180 Tj V BSP295 V (BR)DSS 2012-11-28Page 7
BSP295Rev 2.3 2012-11-28Page 8