BSP280

BSP280 SIEMENS | Alldatasheet

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Type Ordering Code Tape and Reel Information Pin Configuration Marking Package 1234 BSP 280 Q67000-S279 E6327: 1000 pcs/reel G C E C BSP 280 SOT-223 Maximum Ratings Parameter Symbol Values Unit Continuous collector current Soldering point, TS = 25 ˚C TS = 80 ˚C IC 2.5 1.5 A Continuous collector current ambient, TA = 80 ˚CIC 0.5 Pulsed collector current Soldering point, TS = 80 ˚C IC puls 3.0 Collector-emitter voltage VCE 1000 V Gate-emitter voltage VGE – 20 Power dissipation Soldering point, TS = 80 ˚C Ambient TA = 25 ˚C Ptot 1.8 W Operating and storage temperature range Tj,Tstg – 40 … + 150 ˚C Thermal resistance1) chip-ambient chip-soldering point RthJA RthJS K/W DIN humidity category, DIN 40 040 – E – IEC climatic category, DIN IEC 68-1 – 40/150/56 IGBT = Insulated Gate Bipolar Transistor 1) Transistor on epoxy pcb 40 mm· 40 mm · 1.5 mm with 6 cm2 copper area for drain connection. IGBT Transistor BSP 280 Preliminary Data l VCE 1000 V l IC 2.5 A l N channel l MOS input (voltage-controlled) l High switch speed l Very low tail current l Latch-up free l Suitable freewheeling diode BAX 280

Electrical Characteristics

at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. Static Characteristics Collector-emitter breakdown voltage VGE = 0,IC = 0.1 mA V(BR)CES 1000 – – V Gate threshold voltage VGE =VCE ,IC = 0.1 mA VGE(th) 4.5 5.5 6.5 Collector-emitter saturation voltage VGE = 15 V,IC = 0.5 A Tj = 25 ˚C Tj = 125 ˚C Tj = 150 ˚C VCE(sat) 1.8 2.1 2.2 3.0 VGE = 15 V,IC = 1.5 A Tj = 25 ˚C Tj = 125 ˚C Tj = 150 ˚C 2.8 3.8 4.0 3.3 4.3 4.5 Zero gate voltage collector current VCE = 1000 V,VGE = 0 Tj = 25 ˚C Tj = 125 ˚C ICES 100 mA Gate-emitter leakage current VGE = 20 V,VCE = 0 IGES – 0.1 100 nA Dynamic Characteristics Forward transconductance VCE = 20 V,IC = 1.5 A gfs – 0.6 – S Input capacitance VCE = 0,VGE = 25 V, f= 1 MHz C i iss – 225 – pF Output capacitance VCE = 0,VGE = 25 V, f= 1 MHz Coss –2 5 – Reverse transfer capacitance VCE = 0,VGE = 25 V, f= 1 MHz Crss –1 3 – Turn-on delay time VCC = 600 V,VGE =1 5V ,RG(on) =2 5W ,IC = 1.5 A td(on) –2 0 – ns Rise time VCC = 600 V,VGE =1 5V ,RG(on) =2 5W ,IC = 1.5 A tr –1 5 –

VCC = 600 V,VGE =1 5V ,RG(off) =2 5W ,IC = 1.5 A Eon – 0.3 – mWs Turn-off delay time VCC = 600 V,VGE =1 5V ,RG(off) =2 5W ,IC = 1.5 A td(off) – 120 – ns Fall time VCC = 600 V,VGE =1 5V ,RG(off) =2 5W ,IC = 1.5 A tf –2 0 – Total turn-off losses VCC = 600 V,VGE =1 5V ,RG(off) =2 5W ,IC = 1.5 A Eoff – 0.2 – mWs Electrical Characteristics (cont’d) at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. SOT-223 Dimensions in mm

atTj = 25 ˚C, unless otherwise specified. Typ. output characteristicsIC =f (VCE ) parameter:tp = 80ms Typ. capacitancesC =f (VCE ) parameter:VGE = 0 V,f = 1 MHz Typ. transfer characteristicsIC =f(VGE ) parameter:tp = 80ms, VCE = 20 V Typ. saturation characteristics VCE(sat) =f(VGE ); parameter:Tj = 25 ˚C

Typ. saturation characteristic VCE(sat) =f(VGE ); parameter:Tj = 125 ˚C Typ. gate charge VGE =f (Q Gate) parameter:IC plus = 1 A