BSP223

BSP223 SIEMENS | Alldatasheet

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Semiconductor Group 1 25/09/1997 Preliminary data BSP 223 SIPMOS ® Small-Signal Transistor

• N channel
• Enhancement mode
• Avalanche rated Pin 1 Pin 2 Pin 3 Pin 4 G D S D Type VDS ID RDS(on) Package Marking BSP 223 600 V 0.38 A 5 Ω SOT-223 BSP 223 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Maximum Ratings Parameter Symbol Values Unit Continuous drain current TA = 25 °C ID 0.38 A DC drain current, pulsed TA = 25 °C IDpuls 1.52 Avalanche energy, single pulse ID = 1.4 A, VDD = 50 V, RGS = 25 Ω L = 122 mH, Tj = 25 °C EAS 130 mJ Gate source voltage VGS ± 20 V Power dissipation TA = 25 °C Ptot 1.8 W

Semiconductor Group 2 25/09/1997 Preliminary data BSP 223 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Tj -55 ... + 150 °C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air 1) RthJA ≤ 70 K/W Thermal resistance, junction-soldering point 1) RthJS ≤ 10 IEC climatic category, DIN IEC 68-1 55 / 150 / 56 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 25 °C V(BR)DSS 600 - - V Gate threshold voltage VGS=VDS, ID = 1 mA VGS(th) 2.1 3 4 Zero gate voltage drain current VDS = 600 V, VGS = 0 V, Tj = 25 °C VDS = 600 V, VGS = 0 V, Tj = 125 °C IDSS 0.1 100 µA Gate-source leakage current VGS = 20 V, VDS = 0 V IGSS - 10 100 nA Drain-Source on-state resistance VGS = 10 V, ID = 0.38 A RDS(on) - 4 5 Ω

Semiconductor Group 3 25/09/1997 Preliminary data BSP 223 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Transconductance VDS≥ 2 * ID * RDS(on)max, ID = 0.38 A gfs 0.2 0.8 - S Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Ciss - 300 400 pF Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Coss - 40 60 Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Crss - 15 25 Turn-on delay time VDD = 30 V, VGS = 10 V, ID = 0.3 A RG = 50 Ω td(on) - 8 12 ns Rise time VDD = 30 V, VGS = 10 V, ID = 0.3 A RG = 50 Ω tr - 12 18 Turn-off delay time VDD = 30 V, VGS = 10 V, ID = 0.3 A RG = 50 Ω td(off) - 45 65 Fall time VDD = 30 V, VGS = 10 V, ID = 0.3 A RG = 50 Ω tf - 25 40 Gate charge at threshold VDD = 40 V, ID ≥ 0.1 A, VGS 0 to 1 V Qg(th) - 0.4 0.6 nC Gate Charge at 7.0 V VDD = 40 V, ID = 0.4 A, VGS 0 to 7 V Qg(7) - 13 20 Gate Charge total VDD = 40 V, ID = 0.4 A, VGS 0 to 10 V Qg(total) - 16 25 Gate plateau voltage VDS = 15 V, ID = 0.4 A V(plateau) - 4.4 - V

Semiconductor Group 4 25/09/1997 Preliminary data BSP 223 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Reverse Diode Inverse diode continuous forward current TA = 25 °C IS - - 0.38 A Inverse diode direct current,pulsed TA = 25 °C ISM - - 1.52 Inverse diode forward voltage VGS = 0 V, IF = 0.76 A VSD - 0.85 1.2 V Reverse recovery time VR = 100 V, IF=lS, diF/dt = 100 A/µs trr - 200 300 ns Reverse recovery charge VR = 100 V, IF=lS, diF/dt = 100 A/µs Qrr - 0.65 1 µC

Semiconductor Group 5 25/09/1997 Preliminary data BSP 223 Power dissipation Ptot = ƒ ( TA ) 0 20 40 60 80 100 120 °C 160 TA 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 W 2.0 Ptot Drain current ID = ƒ ( TA ) parameter: VGS ≥ 10 V 0 20 40 60 80 100 120 °C 160 TA 0.00 0.04 0.08 0.12 0.16 0.20 0.24 0.28 0.32 A 0.40 ID Safe operating area ID = ƒ ( VDS ) parameter: D = 0 , TC = 25 °C -3 10 -2 10 -1 10 0 10 1 10 A ID 10 0 10 1 10 2 10 3 V VDS R DS(on) V DS / I D DC 10 ms 1 ms tp = 340.0 µs Transient thermal impedance Zth JA = ƒ ( tp ) parameter: D = tp / T -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 K/W ZthJC 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s tp single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

6 25/09/1997Semiconductor Group Preliminary data BSP 223 Typ. output characteristics ID = ƒ( VDS ) parameter: tp = 80 µs 0 2 4 6 8 10 12 14 V 17 VDS 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 A 0.9 ID VGS [V] a a 4.0 b b 4.5 c c 5.0 d d 5.5 e e 6.0 f f 6.5 g g 7.0 h h 7.5 i i 8.0 j j 8.5 k k 9.0 lPtot = 2 W l 10.0 Typ. drain-source on-resistance RDS (on) = ƒ( ID ) parameter: tp = 80 µs, Tj = 25 °C ID Ω RDS (on) VGS [V] = a 4.0 VGS [V] = a a 4.5 b b 5.0 c c 5.5 d d 6.0 e e 6.5 f f 7.0 g g 7.5 h h 8.0 i i 8.5 j j 9.0 k k 10.0 Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 µs VDS≥ 2 x ID x RDS(on)max 0 1 2 3 4 5 6 7 8 V 10 VGS 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 A 1.8 ID

Semiconductor Group 7 25/09/1997 Preliminary data BSP 223 Drain-source on-resistance RDS (on) = ƒ ( Tj) parameter: ID = 0.38 A , VGS = 10 V -60 -20 20 60 100 °C 160 Tj Ω RDS (on) typ 98% Gate threshold voltage VGS (th) = ƒ ( Tj) parameter: VGS = VDS , ID = 1 mA 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 V 4.6 VGS(th) -60 -20 20 60 100 °C 160 Tj typ 98% Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz 0 5 10 15 20 25 30 V 40 VDS 1 10 2 10 3 10 4 10 pF C Ciss Coss Crss Forward characteristics of reverse diode IF = ƒ ( VSD ) parameter: Tj, tp = 80 µs -2 10 -1 10 0 10 1 10 A IF VSD Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%)

Semiconductor Group 8 25/09/1997 Preliminary data BSP 223 Avalanche energy EAS = ƒ ( Tj) parameter: ID = 1.4 A , VDD = 50 V RGS = 25 Ω , L = 122 mH 20 40 60 80 100 120 °C 160 Tj 100 110 120 mJ 140 EAS Typ. gate charge VGS = ƒ ( QGate ) parameter: ID puls = 0 A 0 2 4 6 8 10 12 14 16 nC 20 QGate V VGS DS maxV0,8 DS maxV0,2 Drain-source breakdown voltage V(BR)DSS = ƒ ( Tj) -60 -20 20 60 100 °C 160 Tj 540 560 580 600 620 640 660 680 V 710 V(BR)DSS