BSP220 NEXPERIA | Alldatasheet

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Product specification File under Discrete Semiconductors, SC13b April 1995 DISCRETE SEMICONDUCTORS BSP220 P-channel enhancement mode vertical D-MOS transistor

Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor BSP220

FEATURES

  • Low RDS(on)
  • Direct interface to C-MOS, TTL, etc.
  • High-speed switching
  • No secondary breakdown.

DESCRIPTION

P-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and intended for use in relay, high-speed and line transformer drivers. PINNING - SOT223 PIN DESCRIPTION 1 gate 2 drain 3 source 4 drain QUICK REFERENCE DATA PIN CONFIGURATION SYMBOL PARAMETER CONDITIONS MAX. UNIT −VDS drain-source voltage 200 V −ID drain current DC value 225 mA R DS(on) drain-source on-resistance−ID = 200 mA −VGS = 10 V 12 Ω −VGS(th) gate-source threshold voltage 2.8 V Fig.1 Simplified outline and symbol. handbook, halfpage MAM121 123 Top view s d g

Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor BSP220 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). Note 1. Device mounted on an epoxy printed-circuit board 40 x 40 x 1.5 mm; mounting pad for the drain lead minimum 6 cm2. THERMAL RESISTANCE Note 1. Device mounted on an epoxy printed-circuit board 40 x 40 x 1.5 mm; mounting pad for the drain lead minimum 6 cm2. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT −VDS drain-source voltage − 200 V ±VGSO gate-source voltage open drain − 20 V −ID drain current DC value − 225 mA −IDM drain current peak value − 600 mA Ptot total power dissipation up to T amb = 25°C (note 1) − 1.5 W Tstg storage temperature range −65 150 °C Tj junction temperature − 150 °C SYMBOL PARAMETER VALUE UNIT R th j-a from junction to ambient (note 1) 83.3 K/W

Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor BSP220 CHARACTERISTICS Tj = 25°C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT −V(BR)DSS drain-source breakdown voltage −ID = 10µA VGS = 0 200 −− V −IDSS drain-source leakage current −VDS = 160 V VGS = 0 −− 1 µA ±IGSS gate-source leakage current ±VGS = 20 V VDS = 0 −− 100 nA −VGS(th) gate-source threshold voltage −ID = 1 mA VGS = VDS 0.8 − 2.8 V R DS(on) drain-source on-resistance −ID = 200 mA −VGS = 10 V − 10 12 Ω  Yfs transfer admittance −ID = 200 mA −VDS = 25 V 100 200 − mS C iss input capacitance −VDS = 25 V VGS = 0 f = 1 MHz − 65 90 pF C oss output capacitance −VDS = 25 V VGS = 0 f = 1 MHz − 20 30 pF C rss feedback capacitance −VDS = 25 V VGS = 0 f = 1 MHz − 61 5p F Switching times (see Figs2 and3) ton turn-on time −ID = 250 mA −VDD = 50 V −VGS = 0 to 10 V − 52 0n s toff turn-off time −ID = 250 mA −VDD = 50 V −VGS = 0 to 10 V − 20 30 ns

Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor BSP220 Fig.2 Switching time test circuit. handbook, halfpage MBB689 50 Ω VDD = −50 V ID 0 V −10 V Fig.3 Input and output waveforms. handbook, halfpage MBB690 10 % 90 % 90 % 10 % ton toff OUTPUT INPUT Fig.4 Power derating curve. handbook, 0 50 100 200 1.6 150 1.2 0.8 0.4 MBB693 Ptot (W) Tamb (°C) Fig.5 Typical output characteristics; Tj = 25°C. handbook, halfpage 0 −25 −0.2 −0.4 −0.6 −0.8 −5 −10 −15 ID (A) −20 MDA706 VDS (V) VGS = −10 V −4 V −3 V −6 V −5 V

Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor BSP220 Fig.6 Typical transfer characteristic;−VDS = 10 V; Tj = 25°C. handbook, halfpage 0 −10 −0.2 −0.4 −0.6 −0.8 −2 −4 −6 ID (A) MDA707 VGS (V) Fig.7 Typical on-resistance as a function of drain current; Tj = 25°C. handbook, halfpage 288 12 ID (mA) R DSon (Ω ) 16 20 24 −103 −102 −10 MDA708 VGS = −10 V −5 V −4 V Fig.8 Typical capacitances as a function of drain-source voltage; VGS = 0; f = 1 MHz; Tj = 25°C. handbook, halfpage 120 160 MDA734 C (pF) VDS (V) C rss C iss C oss Fig.9 Temperature coefficient of drain-source on-resistance; typical RDS(on) at−200 mA/−10 V. k R DS on() at Tj handbook, halfpage −50 0 50 k Tj (°C) 150 2.5 100 1.5 0.5 MDA710

Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor BSP220 Fig.10 Temperature coefficient of gate-source threshold voltage; typical -VGS(th) at -1 mA. k V GS th() at Tj handbook, halfpage −50 0 50 Tj (°C) k 150 1.1 0.8 0.7 0.9 100 MDA711

Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor BSP220 PACKAGE OUTLINE UNIT A 1 bp cD E e1 H E Lp Qy wv REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ mm 0.10 0.01 1.8 1.5 0.80 0.60 3.1 2.9 0.32 0.22 6.7 6.3 3.7 3.3 2.3 e 4.6 7.3 6.7 1.1 0.7 0.95 0.85 0.1 0.10.2 DIMENSIONS (mm are the original dimensions) SOT223 96-11-11 97-02-28 w Mbp D e A Lp Q detail X H E E v M A AB B c y 0 2 4 mm scale A X 13 2 Plastic surface mounted package; collector pad for good heat transfer; 4 leads SOT223

Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor BSP220 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.

Application information

Where application information is given, it is advisory and does not form part of the specification.

Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor BSP220 NOTES

Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor BSP220 NOTES

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